Selection of Joint Publications

Publication List

"Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity"
M. Motyka, F. Janiak, K. Ryczko, G. Sek, J. Misiewicz, A. Bauer, R. Weih, S. Höfling, M. Kamp, and A. Forchel
Opto-Electronics Rev. 19, pp. 137-139 (2011)

"Temperature dependence of photoluminescence from epitaxial InGaAs/GaAs quantum dots with high lateral aspect ratio"
A. Musiał, G. Sęk, A. Maryński, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, J.P. Reithmaier, and A. Forchel
Acta Phys. Pol. A. 120, 883 (2011)

"Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers"
G. Sęk, F. Janiak, M. Motyka, K. Ryczko, J. Misiewicz, A. Bauer, S. Höfling, A. Forchel
Opt. Materials 33, 1817 (2011)

"Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes"
G. Sek, A. Musial, P. Podemski, M. Syperek, J. Misiewicz, A. Löffler, S. Höfling, L. Worschech, and A. Forchel
J. Appl. Phys. 107, 096106 (2010)

"Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes"
R. Kudrawiec, G. Sek, M. Motyka, J. Misiewicz, A. Somers, S. Höfling, L. Worschech, and A. Forchel
J. Appl. Phys. 108, 086106 (2010)

"Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well"
M. Syperek, R. Kudrawiec, M. Baranowski, G. Sek, J. Misiewicz, D. Bisping, B. Marquardt, A. Forchel, and M. Fischer
Appl. Phys. Lett. 96, 041911 (2010)

"Exciton and biexciton emission from a single InAs/InP quantum dash"
G. Sek, P. Podemski, A. Musial, J. Misiewicz, S. Hein, S. Höfling, A. Forchel
J. Appl. Phys. 105, 086104 (2009)

"Emission wavelength tuning of interband cascade lasers in the 3–4 µm spectral range"
A. Bauer, F. Langer, M. Dallner, M. Kamp, M. Motyka, G. Sek, K. Ryczko, J. Misiewicz, S. Höfling, and A. Forchel
Appl. Phys. Lett. 95, 251103 (2009)

"Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications "
M. Motyka, G. Sęk, K. Ryczko, J. Misiewicz, T. Lehnhardt, S. Höfling, and A. Forchel
Appl. Phys. Lett. 94, 251901 (2009)

"Orientation dependent emission properties of columnar quantum dash laser structures"
S. Hein, P. Podemski, G. Sek, J. Misiewicz, P. Ridha, A. Fiore, G. Patriarche, S. Höfling, and A. Forchel
Appl. Phys. Lett. 94, 241113 (2009)

"Optically pumped lasing from a single pillar microcavity with InGaAs/GaAs quantum well potential fluctuation quantum dots"
G. Sęk, P. Podemski, J. Misiewicz, S. Reitzenstein, J. P. Reithmaier, and A. Forchel
J. Appl. Phys. 105, 053513 (2009)

"Immersion layer in columnar quantum dash structure as a polarization insensitive light emitter at 1.55 µm"
G. Sęk, P. Podemski, J. Andrzejewski, J. Misiewicz, S. Hein, S. Höfling, and A. Forchel
Appl. Phys. Express 2, 061102 (2009)

"Fourier transformed photoreflectance and photoluminescence of mid infrared GaSb-based type II quantum wells"
M. Motyka, G. Sęk, J. Misiewicz, A. Bauer, M. Dallner, S. Höfling and A. Forchel
Appl. Phys. Express 2, 126505 (2009)

"Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55 µm"
P. Podemski, G. Sek, K. Ryczko, J. Misiewicz, S. Hein, S. Höfling, A. Forchel, and G. Patriarche
Appl. Phys. Lett. 93, 171910 (2008)

"Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence"
M. Motyka, R. Kudrawiec, J. Misiewicz, M. Hümmer, K. Rößner, T. Lehnhardt, M. Müller, and A. Forchel
J. Appl. Phys. 103, 113514 (2008)

"Experimental evidence on quantum well-quantum dash energy transfer in tunnel injection structures for 1.55 µm emission"
G. Sek, P. Poloczek, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, S. Hoefling, and A. Forchel
Appl. Phys. Lett. 90, 081915 (2007)

"Optical properties of low-strained InxGa1-xAs/GaAs quantum dot structures at the two-dimensional-three-dimensional growth transition"
P. Poloczek, G. Sek, J. Misiewicz, A. Löffler, J.P. Reithmaier, and A. Forchel
J. Appl. Phys. 100, 013503 (2006)

"Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures"
W. Rudno-Rudzinski, G. Sek, K. Ryczko, R. Kudrawiec, J. Misiewicz, A. Somers, R. Schwertberger, J.P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 86, 101904 (2005)
"Strong coupling in a single quantum dot-semiconductor microcavity system"
J.P. Reithmaier, G. Sek, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L.V. Keldysh, V.D. Kulakovskii, T.L. Reinecke, and A. Forchel
Nature 432, 197-200, (2004)