Publications

Quantum modulation of a coherent state with a single electron spin
P. Androvitsaneas, A. B. Young, T. Nutz, J. M. Lennon, S. Mister, C. Schneider, M. Kamp, S. Höfling, D. P. S. McCutcheon, E. Harbord, J. G. Rarity, and R. Oulton
Phys. Rev. Research 6 (2024), DOI: 10.1103/PhysRevResearch.6.023276

Towards spin state tailoring of charged excitons in InGaAs quantum dots using oblique magnetic fields
K. Barr, B. Hourahine, C. Schneider, S. Höfling, and K. G. Lagoudakis
Phys. Rev. B 109 (2024), DOI: 10.1103/PhysRevB.109.075433

Topological Optical Waveguiding of Exciton‐Polariton Condensates
J. Beierlein, O. A. Egorov, P. Gagel, T. H. Harder, A. Wolf, M. Emmerling, S. Betzold, F. Jabeen, L. Ma, S. Höfling, U. Peschel, and S. Klembt
Ann. Phys. (Berl.) (2024), DOI: 10.1002/andp.202400229

Dirac Cones and Room Temperature Polariton Lasing Evidenced in an Organic Honeycomb Lattice
S. Betzold, J. Düreth, M. Dusel, M. Emmerling, A. Bieganowska, J. Ohmer, U. Fischer, S. Höfling, and S. Klembt
Adv. Sci., e2400672 (2024), DOI: 10.1002/advs.202400672

Two-photon emission from a superlattice-based superconducting light-emitting structure
S. Bouscher, D. Panna, R. Jacovi, F. Jabeen, C. Schneider, S. Höfling, and A. Hayat
Light Sci. Appl. 13, 135 (2024), DOI: 10.1038/s41377-024-01472-8

Non-reciprocal band structures in an exciton–polariton Floquet optical lattice
Y. Del Valle Inclan Redondo, X. Xu, T. C. H. Liew, E. A. Ostrovskaya, A. Stegmaier, R. Thomale, C. Schneider, S. Dam, S. Klembt, S. Höfling, S. Tarucha, and M. D. Fraser
Nat. Photon. (2024), DOI: 10.1038/s41566-024-01424-z

An Electrically Pumped Topological Polariton Laser
P. Gagel, O. A. Egorov, F. Dzimira, J. Beierlein, M. Emmerling, A. Wolf, F. Jabeen, S. Betzold, U. Peschel, S. Höfling, C. Schneider, and S. Klembt
Nano Lett. (2024), DOI: 10.1021/acs.nanolett.4c00958

Plug‐and‐Play Fiber‐Coupled Quantum Dot Single‐Photon Source via Photonic Wire Bonding
M. de Gregorio, S. Yu, D. Witt, B. Lin, M. Mitchell, Ł. Dusanowski, C. Schneider, L. Chrostowski, T. Huber-Loyola, S. Höfling, J. F. Young, and A. Pfenning
Adv. Quantum Technol. 7 (2024), DOI: 10.1002/qute.202300227

Postfabrication Tuning of Circular Bragg Resonators for Enhanced Emitter-Cavity Coupling
T. M. Krieger, C. Weidinger, T. Oberleitner, G. Undeutsch, M. B. Rota, N. Tajik, M. Aigner, Q. Buchinger, C. Schimpf, A. J. Garcia, S. F. Da Covre Silva, S. Höfling, T. Huber-Loyola, R. Trotta, and A. Rastelli
ACS Photonics 11, 596 (2024), DOI: 10.1021/acsphotonics.3c01480

1D Topological Interface States for Improving Optical Sensors
J. Lindenthal, A. Widulla, S. Klembt, J. Benduhn, and K. Leo
Adv. Opt. Mater. 12 (2024), DOI: 10.1002/adom.202401185

Accuracy bottlenecks in impedance spectroscopy due to transient effects
V. Lopez-Richard, S. Pradhan, L. K. Castelano, R. S. Wengenroth Silva, O. Lipan, S. Höfling, and F. Hartmann
Journal of Applied Physics 136 (2024), DOI: 10.1063/5.0227045

Beyond equivalent circuit representations in nonlinear systems with inherent memory
V. Lopez-Richard, S. Pradhan, R. S. Wengenroth Silva, O. Lipan, L. K. Castelano, S. Höfling, and F. Hartmann
Journal of Applied Physics 136 (2024), DOI: 10.1063/5.0231791

Mid-infrared Ring Interband Cascade Laser: Operation at the Standard Quantum Limit
G. Marschick, J. Pelini, T. Gabbrielli, F. Cappelli, R. Weih, H. Knötig, J. Koeth, S. Höfling, P. de Natale, G. Strasser, S. Borri, and B. Hinkov
ACS Photonics 11, 395 (2024), DOI: 10.1021/acsphotonics.3c01159

Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells
M. Meyer, T. Fähndrich, S. Schmid, A. Wolf, S. S. Krishtopenko, B. Jouault, G. Bastard, F. Teppe, F. Hartmann, and S. Höfling
Phys. Rev. B 109 (2024), DOI: 10.1103/PhysRevB.109.L121303

Polarized and Unpolarized Emission from a Single Emitter in a Bullseye Resonator
G. Peniakov, Q. Buchinger, M. Helal, S. Betzold, Y. Reum, M. B. Rota, G. Ronco, M. Beccaceci, T. M. Krieger, S. F. C. Da Silva, A. Rastelli, R. Trotta, A. Pfenning, S. Höfling, and T. Huber-Loyola
Laser Photonics Rev. (2024), DOI: 10.1002/lpor.202300835

Comparison between InAs-based and GaSb-based interband cascade lasers with hybrid superlattice plasmon-enhanced claddings
B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, S. Estevam, R. Weih, F. Hartmann, and S. Höfling
Opt. Mater. Express 14, 2912 (2024), DOI: 10.1364/OME.536801

5.0 μ m emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings
B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, and S. Höfling
J. Vac. Sci. Technol. B 42 (2024), DOI: 10.1116/6.0003584

GaSb-based interband cascade laser with hybrid superlattice plasmon-enhanced claddings
B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, and S. Höfling
Appl. Phys. Lett. 124 (2024), DOI: 10.1063/5.0217972

Lasing of moiré trapped MoSe2/WSe2 interlayer excitons coupled to a nanocavity
C. Qian, M. Troue, J. Figueiredo, P. Soubelet, V. Villafañe, J. Beierlein, S. Klembt, A. V. Stier, S. Höfling, A. W. Holleitner, and J. J. Finley
Sci. Adv., eadk6359 (2024), DOI: 10.1126/sciadv.adk6359

A source of entangled photons based on a cavity-enhanced and strain-tuned GaAs quantum dot
M. B. Rota, T. M. Krieger, Q. Buchinger, M. Beccaceci, J. Neuwirth, H. Huet, N. Horová, G. Lovicu, G. Ronco, S. F. Da Covre Silva, G. Pettinari, M. Moczała-Dusanowska, C. Kohlberger, S. Manna, S. Stroj, J. Freund, X. Yuan, C. Schneider, M. Ježek, S. Höfling, F. Basso Basset, T. Huber-Loyola, A. Rastelli, and R. Trotta
eLight 4, 13 (2024), DOI: 10.1186/s43593-024-00072-8

Coupling Dynamics and Linear Polarization Phenomena in Codirectional Polariton Waveguide Couplers
E. Rozas, A. Yulin, S. Klembt, S. Höfling, M. D. Martín, and L. Viña
Adv. Opt. Mater. (2024), DOI: 10.1002/adom.202400420

Wavelength Tuning in Resonant Cavity Interband Cascade Light Emitting Diodes (RCICLEDs) via Post Growth Cavity Length Adjustment
N. Schäfer, R. Weih, J. Scheuermann, F. Rothmayr, J. Koeth, and S. Höfling
Sensors (Basel, Switzerland) 24 (2024), DOI: 10.3390/s24123843

Ultra-low density and high performance InAs quantum dot single photon emitters
C. Shang, M. de Gregorio, Q. Buchinger, M. Meinecke, P. Gschwandtner, A. Pfenning, T. Huber-Loyola, S. Höfling, and J. E. Bowers
APL Quantum 1 (2024), DOI: 10.1063/5.0209866

Dynamic Phase Enabled Topological Mode Steering in Composite Su‐Schrieffer–Heeger Waveguide Arrays
M. Tang, C. Pang, C. N. Saggau, H. Dong, C. H. Lee, R. Thomale, S. Klembt, I. C. Fulga, J. van den Brink, Y. Vaynzof, O. G. Schmidt, J. Wang, and L. Ma
Adv Quantum Tech (2024), DOI: 10.1002/qute.202400390

Time-bin entanglement at telecom wavelengths from a hybrid photonic integrated circuit
H. Thiel, L. Jehle, R. J. Chapman, S. Frick, H. Conradi, M. Kleinert, H. Suchomel, M. Kamp, S. Höfling, C. Schneider, N. Keil, and G. Weihs
Sci. Rep. 14, 9990 (2024), DOI: 10.1038/s41598-024-60758-4

Deterministic storage and retrieval of telecom light from a quantum dot single-photon source interfaced with an atomic quantum memory
S. E. Thomas, L. Wagner, R. Joos, R. Sittig, C. Nawrath, P. Burdekin, I. M. de Buy Wenniger, M. J. Rasiah, T. Huber-Loyola, S. Sagona-Stophel1, S. Höfling, M. Jetter, P. Michler, I. A. Walmsley, S. L. Portalupi, and P. M. Ledingham
Sci. Adv., eadi7346 (2024), DOI: 10.1126/sciadv.adi7346

Detectivity enhancement by double radiation pass in interband cascade infrared photodetectors
A. Bader, F. Rothmayr, N. Khan, J. Koeth, F. Hartmann, and S. Höfling
Appl. Phys. Lett. 123 (2023), DOI: 10.1063/5.0165187

Signatures of the Optical Stark Effect on Entangled Photon Pairs from Resonantly Pumped Quantum Dots
F. Basso Basset, M. B. Rota, M. Beccaceci, T. M. Krieger, Q. Buchinger, J. Neuwirth, H. Huet, S. Stroj, S. F. Da Covre Silva, G. Ronco, C. Schimpf, S. Höfling, T. Huber-Loyola, A. Rastelli, and R. Trotta
Phys. Rev. Lett. 131, 166901 (2023), DOI: 10.1103/PhysRevLett.131.166901

2023 roadmap for materials for quantum technologies
C. Becher, W. Gao, S. Kar, C. D. Marciniak, T. Monz, J. G. Bartholomew, P. Goldner, H. Loh, E. Marcellina, K. E. J. Goh, T. S. Koh, B. Weber, Z. Mu, J.-Y. Tsai, Q. Yan, T. Huber-Loyola, S. Höfling, S. Gyger, S. Steinhauer, and V. Zwiller
Mater. Quantum. Technol. 3, 12501 (2023), DOI: 10.1088/2633-4356/aca3f2

Optical properties of circular Bragg gratings with labyrinth geometry to enable electrical contacts
Q. Buchinger, S. Betzold, S. Höfling, and T. Huber-Loyola
Appl. Phys. Lett. 122, 111110 (2023), DOI: 10.1063/5.0136715

Optically Driven Rotation of Exciton-Polariton Condensates
Y. Del Valle-Inclan Redondo, C. Schneider, S. Klembt, S. Höfling, S. Tarucha, and M. D. Fraser
Nano Lett. 23, 4564 (2023), DOI: 10.1021/acs.nanolett.3c01021

On-Chip Hong–Ou–Mandel Interference from Separate Quantum Dot Emitters in an Integrated Circuit
Ł. Dusanowski, D. Köck, C. Schneider, and S. Höfling
ACS Photonics 10, 2941 (2023), DOI: 10.1021/acsphotonics.3c00679

Independent Tuning of Exciton and Photon Energies in an Exciton–Polariton Condensate by Proton Implantation‐Induced Interdiffusion
M. D. Fraser, H. H. Tan, Y. V. I. Del Redondo, H. Kavuri, E. A. Ostrovskaya, C. Schneider, S. Höfling, Y. Yamamoto, and S. Tarucha
Adv. Opt. Mater. 11, 2201569 (2023), DOI: 10.1002/adom.202201569

Temporal Sorting of Optical Multiwave-Mixing Processes in Semiconductor Quantum Dots
S. Grisard, A. V. Trifonov, H. Rose, R. Reichhardt, M. Reichelt, C. Schneider, M. Kamp, S. Höfling, M. Bayer, T. Meier, and I. A. Akimov
ACS Photonics 10, 3161 (2023), DOI: 10.1021/acsphotonics.3c00530

Single-Photon Source in a Topological Cavity
J. Jurkat, S. Klembt, M. de Gregorio, M. Meinecke, Q. Buchinger, T. H. Harder, J. Beierlein, O. A. Egorov, M. Emmerling, C. Krause, C. Schneider, T. Huber-Loyola, and S. Höfling
Nano Lett. 23, 820 (2023), DOI: 10.1021/acs.nanolett.2c03693

Purcell‐Enhanced Single‐Photon Emission in the Telecom C‐Band
J. Kaupp, Y. Reum, F. Kohr, J. Michl, Q. Buchinger, A. Wolf, G. Peniakov, T. Huber‐Loyola, A. Pfenning, and S. Höfling
Adv. Quantum Technol. 6 (2023), DOI: 10.1002/qute.202300242

Deep learning of quantum entanglement from incomplete measurements
D. Koutný, L. Ginés, M. Moczała-Dusanowska, S. Höfling, C. Schneider, A. Predojević, and M. Ježek
Sci. Adv. 9, eadd7131 (2023), DOI:

Opto-electronic transport properties of resonant tunneling diodes with type-I and II postwells
S. Krüger, A. Pfenning, F. Jabeen, F. Hartmann, and S. Höfling
Appl. Phys. Lett. 123 (2023), DOI: 10.1063/5.0162282

Higher-order exceptional points in waveguide-coupled microcavities: perturbation induced frequency splitting and mode patterns
J. Kullig, D. Grom, S. Klembt, and J. Wiersig
Photon. Res. 11, A54 (2023), DOI: 10.1364/PRJ.496414

Trapping-induced quantum beats in a van-der-Waals heterostructure microcavity observed by two-dimensional micro-spectroscopy
D. Li, H. Shan, H. Knopf, K. Watanabe, T. Taniguchi, Y. Qin, S. Tongay, F. Eilenberger, S. Höfling, C. Schneider, and T. Brixner
Opt. Mater. Express 13, 2798 (2023), DOI: 10.1364/OME.492545

Confined-state physics and signs of fermionization of moiré excitons in WSe 2 /MoSe 2 heterobilayers
F. Lohof, J. Michl, A. Steinhoff, B. Han, M. von Helversen, S. Tongay, K. Watanabe, T. Taniguchi, S. Höfling, S. Reitzenstein, C. Anton-Solanas, C. Gies, and C. Schneider
2d Mater. 10, 34001 (2023), DOI: 10.1088/2053-1583/acd265

Tracking Quantum Coherence in Polariton Condensates with Time-Resolved Tomography
C. Lüders, M. Pukrop, F. Barkhausen, E. Rozas, C. Schneider, S. Höfling, J. Sperling, S. Schumacher, and M. Aßmann
Phys. Rev. Lett. 130, 113601 (2023), DOI: 10.1103/PhysRevLett.130.113601

Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
M. Meyer, S. Schmid, F. Jabeen, G. Bastard, F. Hartmann, and S. Höfling
New J. Phys. 25, 23035 (2023), DOI: 10.1088/1367-2630/acbab7

Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band
J. Michl, G. Peniakov, A. Pfenning, J. Hilska, A. Chellu, A. Bader, M. Guina, S. Höfling, T. Hakkarainen, and T. Huber‐Loyola
Adv. Quantum Technol. 6 (2023), DOI: 10.1002/qute.202300180

Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings
M. Mikulicz, M. Rygała, T. Smołka, M. Janczak, M. Badura, A. Łozińska, A. Wolf, M. Emmerling, B. Ściana, S. Höfling, T. Czyszanowski, G. Sęk, and M. Motyka
Opt. Express 31, 26898 (2023), DOI: 10.1364/OE.496261

Pushing the Room Temperature Continuous‐Wave Operation Limit of GaSb‐Based Interband Cascade Lasers beyond 6 µm
J. Nauschütz, H. Knötig, R. Weih, J. Scheuermann, J. Koeth, S. Höfling, and B. Schwarz
Laser Photonics Rev. 17, 2200587 (2023), DOI: 10.1002/lpor.202200587

Polariton–dark exciton interactions in bistable semiconductor microcavities
E. Rozas, E. Sedov, Y. Brune, S. Höfling, A. Kavokin, and M. Aßmann
Phys. Rev. B 108 (2023), DOI: 10.1103/PhysRevB.108.165411

Monolithic high contrast grating on GaSb/AlAsSb based epitaxial structures for mid-infrared wavelength applications
A. Schade, A. Bader, T. Huber, S. Kuhn, T. Czyszanowski, A. Pfenning, M. Rygała, T. Smołka, M. Motyka, G. Sęk, F. Hartmann, and S. Höfling
Opt. Express 31, 16025 (2023), DOI: 10.1364/OE.487119

Hyperfine interaction limits polarization entanglement of photons from semiconductor quantum dots
C. Schimpf, F. B. Basset, M. Aigner, W. Attenender, L. Ginés, G. Undeutsch, M. Reindl, D. Huber, D. Gangloff, E. A. Chekhovich, C. Schneider, S. Höfling, A. Predojević, R. Trotta, and A. Rastelli
Phys. Rev. B 108 (2023), DOI: 10.1103/PhysRevB.108.L081405

Second-Order Temporal Coherence of Polariton Lasers Based on an Atomically Thin Crystal in a Microcavity
H. Shan, J.-C. Drawer, M. Sun, C. Anton-Solanas, M. Esmann, K. Yumigeta, K. Watanabe, T. Taniguchi, S. Tongay, S. Höfling, I. Savenko, and C. Schneider
Physical review letters 131, 206901 (2023), DOI: 10.1103/PhysRevLett.131.206901

Fabrication of low-loss III-V Bragg-reflection waveguides for parametric down-conversion
H. Thiel, M. Wagner, B. Nardi, A. Schlager, R. J. Chapman, S. Frick, H. Suchomel, M. Kamp, S. Höfling, C. Schneider, and G. Weihs
Opt. Mater. Express 13, 1278 (2023), DOI: 10.1364/OME.487434

Linear colossal magnetoresistance and magnetic textures in LaTiO3 thin films on SrTiO3
T. Tschirner, B. Leikert, F. Kern, D. Wolf, A. Lubk, M. Kamp, K. Miller, F. Hartmann, S. Höfling, J. Gabel, M. Schmitt, M. Stübinger, J. Küspert, T.-L. Lee, B. Büchner, J. Dufouleur, M. Gabay, M. Sing, R. Claessen, and L. Veyrat
Phys. Rev. B 108 (2023), DOI: 10.1103/PhysRevB.108.245405

Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
P. Wyborski, M. Gawełczyk, P. Podemski, P. A. Wroński, M. Pawlyta, S. Gorantla, F. Jabeen, S. Höfling, and G. Sęk
Phys. Rev. Applied 20 (2023), DOI: 10.1103/PhysRevApplied.20.044009

Large inverted band gap in strained three-layer InAs/GaInSb quantum wells
C. Avogadri, S. Gebert, S. S. Krishtopenko, I. Castillo, C. Consejo, S. Ruffenach, C. Roblin, C. Bray, Y. Krupko, S. Juillaguet, S. Contreras, A. Wolf, F. Hartmann, S. Höfling, G. Boissier, J.-B. Rodriguez, S. Nanot, E. Tournié, F. Teppe, and B. Jouault
Phys. Rev. Research 4 (2022), DOI: 10.1103/PhysRevResearch.4.L042042

Interband cascade infrared photodetectors based on Ga-free InAs/InAsSb superlattice absorbers
A. Bader, F. Rothmayr, N. Khan, F. Jabeen, J. Koeth, S. Höfling, and F. Hartmann
Appl. Phys. Lett. 121, 41104 (2022), DOI: 10.1063/5.0094166

Special topic on non-classical light emitters and single-photon detectors
C. Becher, S. Höfling, J. Liu, P. Michler, W. Pernice, and C. Toninelli
Appl. Phys. Lett. 120, 10401 (2022), DOI: 10.1063/5.0078886

Numerical optimization of single-mode fiber-coupled single-photon sources based on semiconductor quantum dots
L. Bremer, C. Jimenez, S. Thiele, K. Weber, T. Huber, S. Rodt, A. Herkommer, S. Burger, S. Höfling, H. Giessen, and S. Reitzenstein
Opt. Express 30, 15913 (2022), DOI: 10.1364/OE.456777

Diamagnetic coefficients and g -factors of InAs/InGaAlAs quantum dashes emitting at telecom wavelengths
M. Burakowski, P. Mrowiński, M. Gawełczyk, J. P. Reithmaier, S. Höfling, and G. Sęk
J. Appl. Phys. 132, 144301 (2022), DOI: 10.1063/5.0101345

Accurate Quantum Transport Modeling of High-Speed In 0.53 Ga 0.47 As/AlAs Double-Barrier Resonant Tunneling Diodes
D. Cimbri, B. Yavas-Aydin, F. Hartmann, F. Jabeen, L. Worschech, S. Höfling, and E. Wasige
IEEE Trans. Electron Devices 69, 4638 (2022), DOI: 10.1109/TED.2022.3178360

All-Optical Tuning of Indistinguishable Single Photons Generated in Three-Level Quantum Systems
Ł. Dusanowski, C. Gustin, S. Hughes, C. Schneider, and S. Höfling
Nano Lett. 22, 3562 (2022), DOI: 10.1021/acs.nanolett.1c04700

Optical charge injection and coherent control of a quantum-dot spin-qubit emitting at telecom wavelengths
Ł. Dusanowski, C. Nawrath, S. L. Portalupi, M. Jetter, T. Huber, S. Klembt, P. Michler, and S. Höfling
Nat. Commun. 13, 748 (2022), DOI: 10.1038/s41467-022-28328-2

Electro-optical Switching of a Topological Polariton Laser
P. Gagel, T. H. Harder, S. Betzold, O. A. Egorov, J. Beierlein, H. Suchomel, M. Emmerling, A. Wolf, U. Peschel, S. Höfling, C. Schneider, and S. Klembt
ACS Photonics 9, 405 (2022), DOI: 10.1021/acsphotonics.1c01605

High Extraction Efficiency Source of Photon Pairs Based on a Quantum Dot Embedded in a Broadband Micropillar Cavity
L. Ginés, M. Moczała-Dusanowska, D. Dlaka, R. Hošák, J. R. Gonzales-Ureta, J. Lee, M. Ježek, E. Harbord, R. Oulton, S. Höfling, A. B. Young, C. Schneider, and A. Predojević
Phys. Rev. Lett. 129 (2022), DOI: 10.1103/PhysRevLett.129.033601

Multiple Rabi rotations of trions in InGaAs quantum dots observed by photon echo spectroscopy with spatially shaped laser pulses
S. Grisard, H. Rose, A. V. Trifonov, R. Reichhardt, D. E. Reiter, M. Reichelt, C. Schneider, M. Kamp, S. Höfling, M. Bayer, T. Meier, and I. A. Akimov
Phys. Rev. B 106 (2022), DOI: 10.1103/PhysRevB.106.205408

Using the Autler-Townes and ac Stark effects to optically tune the frequency of indistinguishable single photons from an on-demand source
C. Gustin, Ł. Dusanowski, S. Höfling, and S. Hughes
Phys. Rev. Res. 4, 23045 (2022), DOI: 10.1103/PhysRevResearch.4.023045

Topologischer Laser mit vertikalen Resonatoren
T. H. Harder, S. Höfling, and S. Klembt
Phys. Unserer Zeit 53, 6 (2022), DOI: 10.1002/piuz.202270104

Grating-based microcavity with independent control of resonance energy and linewidth for non-Hermitian polariton system
J. Hu, N. Lydick, Z. Wang, F. Jabeen, C. Schneider, S. Höfling, and H. Deng
Appl. Phys. Lett. 121, 81106 (2022), DOI: 10.1063/5.0116286

Polariton condensates for classical and quantum computing
A. Kavokin, T. C. H. Liew, C. Schneider, P. G. Lagoudakis, S. Klembt, and S. Höfling
Nat. Rev. Phys. 4, 435 (2022), DOI: 10.1038/s42254-022-00447-1

Mitigating Valence Intersubband Absorption in Interband Cascade Lasers
H. Knötig, J. Nauschütz, N. Opačak, S. Höfling, J. Koeth, R. Weih, and B. Schwarz
Laser Photonics Rev., 2200156 (2022), DOI: 10.1002/lpor.202200156

Two-photon pumped exciton-polariton condensation
N. Landau, D. Panna, S. Brodbeck, C. Schneider, S. Höfling, and A. Hayat
Optica 9, 1347 (2022), DOI: 10.1364/OPTICA.471345

Hybridized Exciton-Photon-Phonon States in a Transition Metal Dichalcogenide van der Waals Heterostructure Microcavity
D. Li, H. Shan, C. Rupprecht, H. Knopf, K. Watanabe, T. Taniguchi, Y. Qin, S. Tongay, M. Nuß, S. Schröder, F. Eilenberger, S. Höfling, C. Schneider, and T. Brixner
Phys. Rev. Lett. 128, 87401 (2022), DOI: 10.1103/PhysRevLett.128.087401

Circularly Polarized Laser Emission from an Electrically Pumped Chiral Microcavity
A. A. Maksimov, E. V. Filatov, I. I. Tartakovskii, V. D. Kulakovskii, S. G. Tikhodeev, C. Schneider, and S. Höfling
Phys. Rev. Appl. 17, L021001 (2022), DOI: 10.1103/PhysRevApplied.17.L021001

Intrinsic circularly polarized exciton emission in a twisted van der Waals heterostructure
J. Michl, C. C. Palekar, S. A. Tarasenko, F. Lohof, C. Gies, M. von Helversen, R. Sailus, S. Tongay, T. Taniguchi, K. Watanabe, T. Heindel, B. Rosa, M. Rödel, T. Shubina, S. Höfling, S. Reitzenstein, C. Antón-Solanas, and C. Schneider
Phys. Rev. B 105, L241406 (2022), DOI: 10.1103/PhysRevB.105.L241406

Single-Photon Counting with Semiconductor Resonant Tunneling Devices
A. Pfenning, S. Krüger, F. Jabeen, L. Worschech, F. Hartmann, and S. Höfling
Nanomaterials (Basel) 12 (2022), DOI: 10.3390/nano12142358

Crossover from exciton-polariton condensation to photon lasing in an optical trap
M. Pieczarka, D. Biegańska, C. Schneider, S. Höfling, S. Klembt, G. Sęk, and M. Syperek
Opt. Express 30, 17070 (2022), DOI: 10.1364/OE.452918

Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature
F. Rothmayr, E. D. Guarin Castro, F. Hartmann, G. Knebl, A. Schade, S. Höfling, J. Koeth, A. Pfenning, L. Worschech, and V. Lopez-Richard
Nanomaterials (Basel) 12 (2022), DOI: 10.3390/nano12061024

Exploring the phase diagram of InAs/GaSb/InAs trilayer quantum wells
S. Schmid, M. Meyer, F. Jabeen, G. Bastard, F. Hartmann, and S. Höfling
Phys. Rev. B 105, 155304 (2022), DOI: 10.1103/PhysRevB.105.155304

Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity
H. Shan, I. Iorsh, B. Han, C. Rupprecht, H. Knopf, F. Eilenberger, M. Esmann, K. Yumigeta, K. Watanabe, T. Taniguchi, S. Klembt, S. Höfling, S. Tongay, C. Antón-Solanas, I. A. Shelykh, and C. Schneider
Nat. Commun. 13, 3001 (2022), DOI: 10.1038/s41467-022-30645-5

The Ubiquitous Memristive Response in Solids
R. S. W. Silva, F. Hartmann, and V. Lopez-Richard
IEEE Trans. Electron Devices 69, 5351 (2022), DOI: 10.1109/TED.2022.3188958

Observation of room temperature excitons in an atomically thin topological insulator
M. Syperek, R. Stühler, A. Consiglio, P. Holewa, P. Wyborski, Ł. Dusanowski, F. Reis, S. Höfling, R. Thomale, W. Hanke, R. Claessen, D. Di Sante, and C. Schneider
Nat. Commun. 13, 6313 (2022), DOI: 10.1038/s41467-022-33822-8

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer
P. Wyborski, P. Podemski, P. A. Wroński, F. Jabeen, S. Höfling, and G. Sęk
Materials (Basel) 15 (2022), DOI: 10.3390/ma15031071

Quantum interference with independent single-photon sources over 300 km fiber
X. You, M.-Y. Zheng, S. Chen, R.-Z. Liu, J. Qin, M.-C. Xu, Z.-X. Ge, T.-H. Chung, Y.-K. Qiao, Y.-F. Jiang, H.-S. Zhong, M.-C. Chen, H. Wang, Y.-M. He, X.-P. Xie, H. Li, L.-X. You, C. Schneider, J. Yin, T.-Y. Chen, M. Benyoucef, Y.-H. Huo, S. Höfling, Q. Zhang, C.-Y. Lu, and J.-W. Pan
Adv. Photon. 4 (2022), DOI: 10.1117/1.AP.4.6.066003

Direct fiber-coupled single photon source based on a photonic crystal waveguide
B.-H. Ahn, C.-M. Lee, H.-J. Lim, T. W. Schlereth, M. Kamp, S. Höfling, and Y.-H. Lee
Appl. Phys. Lett. 107, 81113 (2015), DOI: 10.1063/1.4929838

Optical bistability in electrically driven polariton condensates
M. Amthor, T. C. H. Liew, C. Metzger, S. Brodbeck, L. Worschech, M. Kamp, I. A. Shelykh, A. V. Kavokin, C. Schneider, and S. Höfling
Phys. Rev. B 91, 81404 (2015), DOI: 10.1103/PhysRevB.91.081404

Enhanced single photon emission from positioned InP/GaInP quantum dots coupled to a confined Tamm-plasmon mode
T. Braun, V. Baumann, O. Iff, S. Höfling, C. Schneider, and M. Kamp
Appl. Phys. Lett. 106, 41113 (2015), DOI: 10.1063/1.4907003

Transient optical parametric oscillations in resonantly pumped multistable cavity polariton condensates
A. S. Brichkin, S. G. Tikhodeev, S. S. Gavrilov, N. A. Gippius, S. I. Novikov, A. V. Larionov, C. Schneider, M. Kamp, S. Höfling, and V. D. Kulakovskii
Phys. Rev. B 92, 125155 (2015), DOI: 10.1103/PhysRevB.92.125155

Impact of lateral carrier confinement on electro-optical tuning properties of polariton condensates
S. Brodbeck, H. Suchomel, M. Amthor, A. Wolf, M. Kamp, C. Schneider, and S. Höfling
Appl. Phys. Lett. 107, 41108 (2015), DOI: 10.1063/1.4927601

Impact of nanomechanical resonances on lasing from electrically pumped quantum dot micropillars
T. Czerniuk, J. Tepper, A. V. Akimov, S. Unsleber, C. Schneider, M. Kamp, S. Höfling, D. R. Yakovlev, and M. Bayer
Appl. Phys. Lett. 106, 41103 (2015), DOI: 10.1063/1.4906611

InAs-based interband-cascade-lasers emitting around 7 μ m with threshold current densities below 1 kA/cm 2 at room temperature
M. Dallner, F. Hau, S. Höfling, and M. Kamp
Appl. Phys. Lett. 106, 41108 (2015), DOI: 10.1063/1.4907002

InAs-based distributed feedback interband cascade lasers
M. Dallner, J. Scheuermann, L. Nähle, M. Fischer, J. Koeth, S. Höfling, and M. Kamp
Appl. Phys. Lett. 107, 181105 (2015), DOI: 10.1063/1.4935076

Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures
Ł. Dusanowski, M. Syperek, A. Maryński, L. H. Li, J. Misiewicz, S. Höfling, M. Kamp, A. Fiore, and G. Sęk
Appl. Phys. Lett. 106, 233107 (2015), DOI: 10.1063/1.4922455

Widely-tunable interband cascade lasers for the mid-infrared
M. von Edlinger, J. Scheuermann, R. Weih, L. Nähle, M. Fischer, S. Höfling, J. Koeth, and M. Kamp
Proc. SPIE, Quantum Sensing and Nanophotonic Devices XII, 93702A (2015), DOI: 10.1117/12.2079926

Observation of non-Hermitian degeneracies in a chaotic exciton-polariton billiard
T. Gao, E. Estrecho, K. Y. Bliokh, T. C. H. Liew, M. D. Fraser, S. Brodbeck, M. Kamp, C. Schneider, S. Höfling, Y. Yamamoto, F. Nori, Y. S. Kivshar, A. G. Truscott, R. G. Dall, and E. A. Ostrovskaya
Nature 526, 554 (2015), DOI: 10.1038/nature15522

Blowup dynamics of coherently driven polariton condensates: Experiment
S. S. Gavrilov, A. S. Brichkin, Y. V. Grishina, C. Schneider, S. Höfling, and V. D. Kulakovskii
Phys. Rev. B 92, 205312 (2015), DOI: 10.1103/PhysRevB.92.205312

Broadband indistinguishability from bright parametric downconversion in a semiconductor waveguide
T. Günthner, B. Pressl, K. Laiho, J. Geßler, S. Höfling, M. Kamp, C. Schneider, and G. Weihs
J. Opt. 17, 125201 (2015), DOI: 10.1088/2040-8978/17/12/125201

Voltage fluctuation to current converter with Coulomb-coupled quantum dots
F. Hartmann, P. Pfeffer, S. Höfling, M. Kamp, and L. Worschech
Phys. Rev. Lett. 114, 146805 (2015), DOI: 10.1103/PhysRevLett.114.146805

Dynamically controlled resonance fluorescence spectra from a doubly dressed single InGaAs quantum dot
Y.-M. He, Y.-M. He, J. Liu, Y.-J. Wei, H. Y. Ramírez, M. Atatüre, C. Schneider, M. Kamp, S. Höfling, C.-Y. Lu, and J.-W. Pan
Phys. Rev. Lett. 114, 97402 (2015), DOI: 10.1103/PhysRevLett.114.097402

Mid-infrared (~2.8 μm to ~7.1 μm) interband cascade lasers
S. Höfling, R. Weih, M. Dallner, J. Scheuermann, M. von Edlinger, L. Nähle, M. Fischer, J. Koeth, and M. Kamp
Proc. SPIE, Biosensing and Nanomedicine VIII, 95500F (2015), DOI: 10.1117/12.2193657

Compensation of phonon-induced renormalization of vacuum Rabi splitting in large quantum dots: Towards temperature-stable strong coupling in the solid state with quantum dot-micropillars
C. Hopfmann, A. Musiał, M. Strauß, A. M. Barth, M. Glässl, A. Vagov, C. Schneider, S. Höfling, M. Kamp, V. M. Axt, and S. Reitzenstein
Phys. Rev. B 92, 245403 (2015), DOI: 10.1103/PhysRevB.92.245403

Optimal excitation conditions for indistinguishable photons from quantum dots
T. Huber, A. Predojević, D. Föger, G. S. Solomon, and G. Weihs
New J. Phys. 17, 123025 (2015), DOI: 10.1088/1367-2630/17/12/123025

Photon-Statistics Excitation Spectroscopy of a Quantum-Dot Micropillar Laser
T. Kazimierczuk, J. Schmutzler, M. Aßmann, C. Schneider, M. Kamp, S. Höfling, and M. Bayer
Phys. Rev. Lett. 115, 27401 (2015), DOI: 10.1103/PhysRevLett.115.027401

Electrically driven optical antennas
J. Kern, R. Kullock, J. C. Prangsma, M. Emmerling, M. Kamp, and B. Hecht
Nat. Photonics 9, 582 (2015), DOI: 10.1038/nphoton.2015.141

Unconventional collective normal-mode coupling in quantum-dot-based bimodal microlasers
M. Khanbekyan, H. A. M. Leymann, C. Hopfmann, A. Foerster, C. Schneider, S. Höfling, M. Kamp, J. Wiersig, and S. Reitzenstein
Phys. Rev. A 91, 43840 (2015), DOI: 10.1103/PhysRevA.91.043840

High-power green and blue electron-beam pumped surface-emitting lasers using dielectric and epitaxial distributed Bragg reflectors
T. Klein, S. Klembt, V. I. Kozlovsky, A. Zheng, M. D. Tiberi, and C. Kruse
J. Appl. Phys. 117, 113106 (2015), DOI: 10.1063/1.4915625

Exciton-polariton gas as a nonequilibrium coolant
S. Klembt, E. Durupt, S. Datta, T. Klein, A. Baas, Y. Léger, C. Kruse, D. Hommel, A. Minguzzi, and M. Richard
Phys. Rev. Lett. 114, 186403 (2015), DOI: 10.1103/PhysRevLett.114.186403

Graded band gap GaInNAs solar cells
F. Langer, S. Perl, S. Höfling, and M. Kamp
Appl. Phys. Lett. 106, 233902 (2015), DOI: 10.1063/1.4922279

p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio
F. Langer, S. Perl, S. Höfling, and M. Kamp
Appl. Phys. Lett. 106, 63905 (2015), DOI: 10.1063/1.4909507

Efficient single photon source based on μ-fibre-coupled tunable microcavity
C.-M. Lee, H.-J. Lim, C. Schneider, S. Maier, S. Höfling, M. Kamp, and Y.-H. Lee
Sci. Rep. 5, 14309 (2015), DOI: 10.1038/srep14309

Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
E.-H. Lee, J.-D. Song, I.-K. Han, S.-K. Chang, F. Langer, S. Höfling, A. Forchel, M. Kamp, and J.-S. Kim
Nanoscale Res. Lett. 10, 114 (2015), DOI: 10.1186/s11671-015-0826-2

Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slabs
S. V. Lobanov, S. G. Tikhodeev, N. A. Gippius, A. A. Maksimov, E. V. Filatov, I. I. Tartakovskii, V. D. Kulakovskii, T. Weiss, C. Schneider, J. Geßler, M. Kamp, and S. Höfling
Phys. Rev. B 92, 205309 (2015), DOI: 10.1103/PhysRevB.92.205309

Memristive operation mode of a site-controlled quantum dot floating gate transistor
P. Maier, F. Hartmann, T. Mauder, M. Emmerling, C. Schneider, M. Kamp, S. Höfling, and L. Worschech
Appl. Phys. Lett. 106, 203501 (2015), DOI: 10.1063/1.4921061

Spatial and temporal dynamics of the crossover from exciton–polariton condensation to photon lasing
Y. Matsuo, M. D. Fraser, K. Kusudo, A. Löffler, S. Höfling, A. Forchel, and Y. Yamamoto
Jpn. J. Appl. Phys. 54, 92801 (2015), DOI: 10.7567/JJAP.54.092801

On the modified active region design of interband cascade lasers
M. Motyka, K. Ryczko, M. Dyksik, G. Sęk, J. Misiewicz, R. Weih, M. Dallner, S. Höfling, and M. Kamp
J. Appl. Phys. 117, 84312 (2015), DOI: 10.1063/1.4913391

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers
M. Motyka, G. Sęk, K. Ryczko, M. Dyksik, R. Weih, G. Patriarche, J. Misiewicz, M. Kamp, and S. Höfling
Nanoscale Res. Lett. 10, 471 (2015), DOI: 10.1186/s11671-015-1183-x

Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μ m
P. Mrowiński, A. Musiał, A. Maryński, M. Syperek, J. Misiewicz, A. Somers, J. P. Reithmaier, S. Höfling, and G. Sęk
Appl. Phys. Lett. 106, 53114 (2015), DOI: 10.1063/1.4907650

A Pulsed Nonclassical Light Source Driven by an Integrated Electrically Triggered Quantum Dot Microlaser
P. Munnelly, T. Heindel, M. M. Karow, S. Höfling, M. Kamp, C. Schneider, and S. Reitzenstein
IEEE Journal of Selected Topics in Quantum Electronics 21, 681 (2015), DOI: 10.1109/JSTQE.2015.2418219

Correlations between axial and lateral emission of coupled quantum dot–micropillar cavities
A. Musiał, C. Hopfmann, T. Heindel, C. Gies, M. Florian, H. A. M. Leymann, A. Foerster, C. Schneider, F. Jahnke, S. Höfling, M. Kamp, and S. Reitzenstein
Phys. Rev. B 91, 205310 (2015), DOI: 10.1103/PhysRevB.91.205310

Dynamics of spatial coherence and momentum distribution of polaritons in a semiconductor microcavity under conditions of Bose-Einstein condensation
D. A. Mylnikov, V. V. Belykh, N. N. Sibeldin, V. D. Kulakovskii, C. Schneider, S. Höfling, M. Kamp, and A. Forchel
JETP Lett. 101, 513 (2015), DOI: 10.1134/S0021364015080111

Logical Stochastic Resonance with a Coulomb-Coupled Quantum-Dot Rectifier
P. Pfeffer, F. Hartmann, S. Höfling, M. Kamp, and L. Worschech
Phys. Rev. Appl. 4, 14011 (2015), DOI: 10.1103/PhysRevApplied.4.014011

Cavity-enhanced AlGaAs/GaAs resonant tunneling photodetectors for telecommunication wavelength light detection at 1.3 μm
A. Pfenning, F. Hartmann, F. Langer, M. Kamp, S. Höfling, and L. Worschech
Proc. SPIE, Infrared Remote Sensing and Instrumentation XXIII, 960810 (2015), DOI: 10.1117/12.2188614

Nanothermometer Based on Resonant Tunneling Diodes: From Cryogenic to Room Temperatures
A. Pfenning, F. Hartmann, M. Rebello Sousa Dias, L. K. Castelano, C. Süßmeier, F. Langer, S. Höfling, M. Kamp, G. E. Marques, L. Worschech, and V. Lopez-Richard
ACS Nano 9, 6271 (2015), DOI: 10.1021/acsnano.5b01831

Photocurrent-voltage relation of resonant tunneling diode photodetectors
A. Pfenning, F. Hartmann, M. Rebello Sousa Dias, F. Langer, M. Kamp, L. K. Castelano, V. Lopez-Richard, G. E. Marques, S. Höfling, and L. Worschech
Appl. Phys. Lett. 107, 81104 (2015), DOI: 10.1063/1.4929424

Ghost Branch Photoluminescence From a Polariton Fluid Under Nonresonant Excitation
M. Pieczarka, M. Syperek, Ł. Dusanowski, J. Misiewicz, F. Langer, A. Forchel, M. Kamp, C. Schneider, S. Höfling, A. V. Kavokin, and G. Sęk
Phys. Rev. Lett. 115, 186401 (2015), DOI: 10.1103/PhysRevLett.115.186401

Mode-resolved Fabry-Perot experiment in low-loss Bragg-reflection waveguides
B. Pressl, T. Günthner, K. Laiho, J. Geßler, M. Kamp, S. Höfling, C. Schneider, and G. Weihs
Opt. Express, OE 23, 33608 (2015), DOI: 10.1364/OE.23.033608

Waveguide Nanowire Superconducting Single-Photon Detectors Fabricated on GaAs and the Study of Their Optical Properties
D. Sahin, A. Gaggero, J.-W. Weber, I. Agafonov, M. A. Verheijen, F. Mattioli, J. Beetz, M. Kamp, S. Höfling, M. C. M. van de Sanden, R. Leoni, and A. Fiore
IEEE Journal of Selected Topics in Quantum Electronics 21, 1 (2015), DOI: 10.1109/JSTQE.2014.2359539

Single-mode interband cascade lasers emitting below 2.8 μ m
J. Scheuermann, R. Weih, M. von Edlinger, L. Nähle, M. Fischer, J. Koeth, M. Kamp, and S. Höfling
Appl. Phys. Lett. 106, 161103 (2015), DOI: 10.1063/1.4918985

All-optical flow control of a polariton condensate using nonresonant excitation
J. Schmutzler, P. Lewandowski, M. Aßmann, D. Niemietz, S. Schumacher, M. Kamp, C. Schneider, S. Höfling, and M. Bayer
Phys. Rev. B 91, 195308 (2015), DOI: 10.1103/PhysRevB.91.195308

Tailoring the optical properties of wide-bandgap based microcavities via metal films
K. Sebald, S. S. Rahman, M. Cornelius, J. Gutowski, T. Klein, S. Klembt, C. Kruse, and D. Hommel
Appl. Phys. Lett. 107, 62101 (2015), DOI: 10.1063/1.4928604

Observation of resonance fluorescence and the Mollow triplet from a coherently driven site-controlled quantum dot
S. Unsleber, S. Maier, D. P. S. McCutcheon, Y.-M. He, M. Dambach, M. Gschrey, N. Gregersen, J. Mørk, S. Reitzenstein, S. Höfling, C. Schneider, and M. Kamp
Optica 2, 1072 (2015), DOI: 10.1364/OPTICA.2.001072

Two-photon interference from a quantum dot microcavity: Persistent pure dephasing and suppression of time jitter
S. Unsleber, D. P. S. McCutcheon, M. Dambach, M. Lermer, N. Gregersen, S. Höfling, J. Mørk, C. Schneider, and M. Kamp
Phys. Rev. B 91, 75413 (2015), DOI: 10.1103/PhysRevB.91.075413

Deterministic generation of bright single resonance fluorescence photons from a Purcell-enhanced quantum dot-micropillar system
S. Unsleber, C. Schneider, S. Maier, Y.-M. He, S. Gerhardt, C.-Y. Lu, J.-W. Pan, M. Kamp, and S. Höfling
Opt. Express, OE 23, 32977 (2015), DOI: 10.1364/OE.23.032977

Interband cascade lasers
I. Vurgaftman, R. Weih, M. Kamp, J. R. Meyer, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, and S. Höfling
J. Phys. D: Appl. Phys. 48, 123001 (2015), DOI: 10.1088/0022-3727/48/12/123001

A polariton condensate in a photonic crystal potential landscape
K. Winkler, J. Fischer, A. Schade, M. Amthor, R. Dall, J. Geßler, M. Emmerling, E. A. Ostrovskaya, M. Kamp, C. Schneider, and S. Höfling
New J. Phys. 17, 23001 (2015), DOI: 10.1088/1367-2630/17/2/023001

Photocurrent readout and electro-optical tuning of resonantly excited exciton polaritons in a trap
K. Winkler, P. Gold, B. Bradel, S. Reitzenstein, V. D. Kulakovskii, M. Kamp, C. Schneider, and S. Höfling
Phys. Rev. B 91, 45127 (2015), DOI: 10.1103/PhysRevB.91.045127

Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits
L. Yu, C. M. Natarajan, T. Horikiri, C. Langrock, J. S. Pelc, M. G. Tanner, E. Abe, S. Maier, C. Schneider, S. Höfling, M. Kamp, R. H. Hadfield, M. M. Fejer, and Y. Yamamoto
Nat. Commun. 6, 8955 (2015), DOI: 10.1038/ncomms9955

Coupling polariton quantum boxes in sub-wavelength grating microcavities
B. Zhang, S. Brodbeck, Z. Wang, M. Kamp, C. Schneider, S. Höfling, and H. Deng
Appl. Phys. Lett. 106, 51104 (2015), DOI: 10.1063/1.4907606

Nach oben

Exciton-polariton laser diodes
M. Amthor, J. Fischer, I. G. Savenko, I. A. Shelykh, A. Chernenko, A. Rahimi-Iman, V. D. Kulakovskii, S. Reitzenstein, N. Y. Kim, M. V. Durnev, A. V. Kavokin, Y. Yamamoto, A. Forchel, M. Kamp, C. Schneider, and S. Höfling
Proc. SPIE, Nanophotonics and Micro/Nano Optics II, 92770Q (2014), DOI: 10.1117/12.2074122

Electro-optical switching between polariton and cavity lasing in an InGaAs quantum well microcavity
M. Amthor, S. Weißenseel, J. Fischer, M. Kamp, C. Schneider, and S. Höfling
Opt. Express, OE 22, 31146 (2014), DOI: 10.1364/OE.22.031146

A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy
V. Baumann, R. Rödel, M. Heidemann, C. Schneider, M. Kamp, and S. Höfling
Phys. Status Solidi A 211, 2601 (2014), DOI: 10.1002/pssa.201431348

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots
T. Braun, C. Schneider, S. Maier, R. Igusa, S. Iwamoto, A. Forchel, S. Höfling, Y. Arakawa, and M. Kamp
AIP Adv. 4, 97128 (2014), DOI: 10.1063/1.4896284

From micro- to nanomagnetic dots: evolution of the eigenmode spectrum on reducing the lateral size
G. Carlotti, G. Gubbiotti, M. Madami, S. Tacchi, F. Hartmann, M. Emmerling, M. Kamp, and L. Worschech
J. Phys. D: Appl. Phys. 47, 265001 (2014), DOI: 10.1088/0022-3727/47/26/265001

Lasing from active optomechanical resonators
T. Czerniuk, C. Brüggemann, J. Tepper, S. Brodbeck, C. Schneider, M. Kamp, S. Höfling, B. A. Glavin, D. R. Yakovlev, A. V. Akimov, and M. Bayer
Nat. Commun. 5, 4038 (2014), DOI: 10.1038/ncomms5038

Creation of orbital angular momentum states with chiral polaritonic lenses
R. Dall, M. D. Fraser, A. S. Desyatnikov, G. Li, S. Brodbeck, M. Kamp, C. Schneider, S. Höfling, and E. A. Ostrovskaya
Phys. Rev. Lett. 113, 200404 (2014), DOI: 10.1103/PhysRevLett.113.200404

Single photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dash
Ł. Dusanowski, M. Syperek, P. Mrowiński, W. Rudno-Rudziński, J. Misiewicz, A. Somers, S. Höfling, M. Kamp, J. P. Reithmaier, and G. Sęk
Appl. Phys. Lett. 105, 21909 (2014), DOI: 10.1063/1.4890603

DFB interband cascade lasers for tunable laser absorption spectroscopy from 3 to 6 μm
M. von Edlinger, J. Scheuermann, L. Nähle, C. Zimmermann, L. Hildebrandt, M. Fischer, J. Koeth, R. Weih, S. Höfling, and M. Kamp
Proc. SPIE, Quantum Sensing and Nanophotonic Devices XI, 899318 (2014), DOI: 10.1117/12.2039734

Monomode Interband Cascade Lasers at 5.2 µm for Nitric Oxide Sensing
M. von Edlinger, J. Scheuermann, R. Weih, C. Zimmermann, L. Nahle, M. Fischer, J. Koeth, S. Höfling, and M. Kamp
IEEE Photon. Technol. Lett. 26, 480 (2014), DOI: 10.1109/LPT.2013.2297447

Anomalies of a nonequilibrium spinor polariton condensate in a magnetic field
J. Fischer, S. Brodbeck, A. V. Chernenko, I. Lederer, A. Rahimi-Iman, M. Amthor, V. D. Kulakovskii, L. Worschech, M. Kamp, M. V. Durnev, C. Schneider, A. V. Kavokin, and S. Höfling
Phys. Rev. Lett. 112, 93902 (2014), DOI: 10.1103/PhysRevLett.112.093902

Magneto-exciton-polariton condensation in a sub-wavelength high contrast grating based vertical microcavity
J. Fischer, S. Brodbeck, B. Zhang, Z. Wang, L. Worschech, H. Deng, M. Kamp, C. Schneider, and S. Höfling
Appl. Phys. Lett. 104, 91117 (2014), DOI: 10.1063/1.4866776

Spatial coherence properties of one dimensional exciton-polariton condensates
J. Fischer, I. G. Savenko, M. D. Fraser, S. Holzinger, S. Brodbeck, M. Kamp, I. A. Shelykh, C. Schneider, and S. Höfling
Phys. Rev. Lett. 113, 203902 (2014), DOI: 10.1103/PhysRevLett.113.203902

Nonlinear route to intrinsic Josephson oscillations in spinor cavity-polariton condensates
S. S. Gavrilov, A. S. Brichkin, S. I. Novikov, S. Höfling, C. Schneider, M. Kamp, A. Forchel, and V. D. Kulakovskii
Phys. Rev. B 90 (2014), DOI: 10.1103/PhysRevB.90.235309

Electro optical tuning of Tamm-plasmon exciton-polaritons
J. Geßler, V. Baumann, M. Emmerling, M. Amthor, K. Winkler, S. Höfling, C. Schneider, and M. Kamp
Appl. Phys. Lett. 105, 181107 (2014), DOI: 10.1063/1.4901023

Low dimensional GaAs/air vertical microcavity lasers
J. Geßler, T. Steinl, A. Mika, J. Fischer, G. Sęk, J. Misiewicz, S. Höfling, C. Schneider, and M. Kamp
Appl. Phys. Lett. 104, 81113 (2014), DOI: 10.1063/1.4866805

Two-photon interference from remote quantum dots with inhomogeneously broadened linewidths
P. Gold, A. Thoma, S. Maier, S. Reitzenstein, C. Schneider, S. Höfling, and M. Kamp
Phys. Rev. B 89 (2014), DOI: 10.1103/PhysRevB.89.035313

(In,Ga)As/GaP electrical injection quantum dot laser
M. Heidemann, S. Höfling, and M. Kamp
Appl. Phys. Lett. 104, 11113 (2014), DOI: 10.1063/1.4860982

Interband cascade lasers for the mid-infrared spectral region
S. Höfling, R. Weih, M. Dallner, and M. Kamp
Proc. SPIE, Novel In-Plane Semiconductor Lasers XIII, 90021B (2014), DOI: 10.1117/12.2038130

f -band condensates in exciton-polariton lattice systems
N. Y. Kim, K. Kusudo, A. Löffler, S. Höfling, A. Forchel, and Y. Yamamoto
Phys. Rev. B 89 (2014), DOI: 10.1103/PhysRevB.89.085306

Molecular beam epitaxial growth of Bi 2 Se 3 nanowires and nanoflakes
G. Knebl, J. Geßler, M. Kamp, and S. Höfling
Appl. Phys. Lett. 105, 133109 (2014), DOI: 10.1063/1.4896966

Single photon emission of a charge-tunable GaAs/Al 0.25 Ga 0.75 As droplet quantum dot device
F. Langer, D. Plischke, M. Kamp, and S. Höfling
Appl. Phys. Lett. 105, 81111 (2014), DOI: 10.1063/1.4894372

Charging dynamics of a floating gate transistor with site-controlled quantum dots
P. Maier, F. Hartmann, M. Emmerling, C. Schneider, S. Höfling, M. Kamp, and L. Worschech
Appl. Phys. Lett. 105, 53502 (2014), DOI: 10.1063/1.4892355

Site-controlled InAs/GaAs quantum dots emitting at telecommunication wavelength
S. Maier, K. Berschneider, T. Steinl, A. Forchel, S. Höfling, C. Schneider, and M. Kamp
Semicond. Sci. Technol. 29, 52001 (2014), DOI: 10.1088/0268-1242/29/5/052001

Bright single photon source based on self-aligned quantum dot-cavity systems
S. Maier, P. Gold, A. Forchel, N. Gregersen, J. Mørk, S. Höfling, C. Schneider, and M. Kamp
Opt. Express, OE 22, 8136 (2014), DOI: 10.1364/OE.22.008136

Circularly polarized light emission from chiral spatially-structured planar semiconductor microcavities
A. A. Maksimov, I. I. Tartakovskii, E. V. Filatov, S. V. Lobanov, N. A. Gippius, S. G. Tikhodeev, C. Schneider, M. Kamp, S. Maier, S. Höfling, and V. D. Kulakovskii
Phys. Rev. B 89 (2014), DOI: 10.1103/PhysRevB.89.045316

Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and elongated quantum dots
A. Musiał, P. Gold, J. Andrzejewski, A. Löffler, J. Misiewicz, S. Höfling, A. Forchel, M. Kamp, G. Sęk, and S. Reitzenstein
Phys. Rev. B 90 (2014), DOI: 10.1103/PhysRevB.90.045430

Distributed feedback interband cascade lasers for spectroscopy from 3-6 μm
L. Nähle, C. Zimmermann, M. von Edlinger, J. Scheuermann, M. Fischer, L. Hildebrandt, J. Koeth, R. Weih, S. Höfling, and M. Kamp
Proc. SPIE, Next-Generation Spectroscopic Technologies VII, 91010G (2014), DOI: 10.1117/12.2050478

Algebraic order and the Berezinskii-Kosterlitz-Thouless transition in an exciton-polariton gas
W. H. Nitsche, N. Y. Kim, G. Roumpos, C. Schneider, M. Kamp, S. Höfling, A. Forchel, and Y. Yamamoto
Phys. Rev. B 90 (2014), DOI: 10.1103/PhysRevB.90.205430

Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths
A. Pfenning, F. Hartmann, F. Langer, S. Höfling, M. Kamp, and L. Worschech
Appl. Phys. Lett. 104, 101109 (2014), DOI: 10.1063/1.4868429

Free space quantum key distribution over 500 meters using electrically driven quantum dot single-photon sources—a proof of principle experiment
M. Rau, T. Heindel, S. Unsleber, T. Braun, J. Fischer, S. Frick, S. Nauerth, C. Schneider, G. Vest, S. Reitzenstein, M. Kamp, A. Forchel, S. Höfling, and H. Weinfurter
New J. Phys. 16, 43003 (2014), DOI: 10.1088/1367-2630/16/4/043003

Nonlinear spectroscopy of exciton-polaritons in a GaAs-based microcavity
J. Schmutzler, M. Aßmann, T. Czerniuk, M. Kamp, C. Schneider, S. Höfling, and M. Bayer
Phys. Rev. B 90 (2014), DOI: 10.1103/PhysRevB.90.075103

Influence of interactions with noncondensed particles on the coherence of a one-dimensional polariton condensate
J. Schmutzler, T. Kazimierczuk, Ö. Bayraktar, M. Aßmann, M. Bayer, S. Brodbeck, M. Kamp, C. Schneider, and S. Höfling
Phys. Rev. B 89 (2014), DOI: 10.1103/PhysRevB.89.115119

Exciton-polariton lasers in Magnetic Fields
C. Schneider, J. Fischer, M. Amthor, S. Brodbeck, I. G. Savenko, I. A. Shelykh, A. Chernenko, A. Rahimi-Iman, V. D. Kulakovskii, S. Reitzenstein, N. Y. Kim, M. V. Durnev, A. V. Kavokin, Y. Yamamoto, A. Forchel, M. Kamp, and S. Höfling
Proc. SPIE, Quantum Sensing and Nanophotonic Devices XI, 899308 (2014), DOI: 10.1117/12.2038484

Gallium arsenide (GaAs) quantum photonic waveguide circuits
J. Wang, A. Santamato, P. Jiang, D. Bonneau, E. Engin, J. W. Silverstone, M. Lermer, J. Beetz, M. Kamp, S. Höfling, M. G. Tanner, C. M. Natarajan, R. H. Hadfield, S. N. Dorenbos, V. Zwiller, J. L. O’Brien, and M. G. Thompson
Opt. Commun. 327, 49 (2014), DOI: 10.1016/j.optcom.2014.02.040

Deterministic and robust generation of single photons from a single quantum dot with 99.5% indistinguishability using adiabatic rapid passage
Y.-J. Wei, Y.-M. He, M.-C. Chen, Y.-N. Hu, Y.-M. He, D. Wu, C. Schneider, M. Kamp, S. Höfling, C.-Y. Lu, and J.-W. Pan
Nano Lett. 14, 6515 (2014), DOI: 10.1021/nl503081n

Temperature-dependent Mollow triplet spectra from a single quantum dot: Rabi frequency renormalization and sideband linewidth insensitivity
Y.-J. Wei, Y.-M. He, Y.-M. He, C.-Y. Lu, J.-W. Pan, C. Schneider, M. Kamp, S. Höfling, D. P. S. McCutcheon, and A. Nazir
Phys. Rev. Lett. 113, 97401 (2014), DOI: 10.1103/PhysRevLett.113.097401

Single mode interband cascade lasers based on lateral metal gratings
R. Weih, L. Nähle, S. Höfling, J. Koeth, and M. Kamp
Appl. Phys. Lett. 105, 71111 (2014), DOI: 10.1063/1.4893788

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting
C. D. Yerino, P. J. Simmonds, B. Liang, D. Jung, C. Schneider, S. Unsleber, M. Vo, D. L. Huffaker, S. Höfling, M. Kamp, and M. L. Lee
Appl. Phys. Lett. 105, 251901 (2014), DOI: 10.1063/1.4904944

Zero-dimensional polariton laser in a subwavelength grating-based vertical microcavity
B. Zhang, Z. Wang, S. Brodbeck, C. Schneider, M. Kamp, S. Höfling, and H. Deng
Light Sci. Appl. 3, e135-e135 (2014), DOI: 10.1038/lsa.2014.16

Nach oben

Microcavity controlled coupling of excitonic qubits
F. Albert, K. Sivalertporn, J. Kasprzak, M. Strauß, C. Schneider, S. Höfling, M. Kamp, A. Forchel, S. Reitzenstein, E. A. Muljarov, and W. Langbein
Nat. Commun. 4, 1747 (2013), DOI: 10.1038/ncomms2764

Anisotropic strain-tuning of quantum dots inside a photonic crystal cavity
J. Beetz, T. Braun, C. Schneider, S. Höfling, and M. Kamp
Semicond. Sci. Technol. 28, 122002 (2013), DOI: 10.1088/0268-1242/28/12/122002

Coherence expansion and polariton condensate formation in a semiconductor microcavity
V. V. Belykh, N. N. Sibeldin, V. D. Kulakovskii, M. M. Glazov, M. A. Semina, C. Schneider, S. Höfling, M. Kamp, and A. Forchel
Phys. Rev. Lett. 110, 137402 (2013), DOI: 10.1103/PhysRevLett.110.137402

Demonstration of the self-mixing effect in interband cascade lasers
K. Bertling, Y. L. Lim, T. Taimre, D. Indjin, P. Dean, R. Weih, S. Höfling, M. Kamp, M. von Edlinger, J. Koeth, and A. D. Rakić
Appl. Phys. Lett. 103, 231107 (2013), DOI: 10.1063/1.4839535

Cascaded emission of linearly polarized single photons from positioned InP/GaInP quantum dots
T. Braun, S. Unsleber, V. Baumann, M. Gschrey, S. Rodt, S. Reitzenstein, C. Schneider, S. Höfling, and M. Kamp
Appl. Phys. Lett. 103, 191113 (2013), DOI: 10.1063/1.4828354

Room temperature polariton light emitting diode with integrated tunnel junction
S. Brodbeck, J.-P. Jahn, A. Rahimi-Iman, J. Fischer, M. Amthor, S. Reitzenstein, M. Kamp, C. Schneider, and S. Höfling
Opt. Express, OE 21, 31098 (2013), DOI: 10.1364/OE.21.031098

Room‐temperature operation of InAs‐based interband‐cascade‐lasers beyond 6 µm
M. Dallner, S. Höfling, and M. Kamp
Electron. Lett. 49, 286 (2013), DOI: 10.1049/el.2012.4450

Superconducting nanowire single-photon detectors integrated with waveguide circuits for quantum information science
A. Gaggero, D. Sahin, F. Mattioli, R. Leoni, G. Frucci, S. Jahanmirinejad, J. P. Sprengers, J. Beetz, M. Lermer, S. Höfling, M. Kamp, and A. Fiore
Proc. SPIE, Advanced Photon Counting Techniques VII, 87270A (2013), DOI: 10.1117/12.2017338

Spin multistability of cavity polaritons in a magnetic field
S. S. Gavrilov, A. V. Sekretenko, N. A. Gippius, C. Schneider, S. Höfling, M. Kamp, A. Forchel, and V. D. Kulakovskii
Phys. Rev. B 87 (2013), DOI: 10.1103/PhysRevB.87.201303

Polariton multistability and fast linear-to-circular polarization conversion in planar microcavities with lowered symmetry
S. S. Gavrilov, A. V. Sekretenko, S. I. Novikov, C. Schneider, S. Höfling, M. Kamp, A. Forchel, and V. D. Kulakovskii
Appl. Phys. Lett. 102, 11104 (2013), DOI: 10.1063/1.4773523

Bloch-wave engineered submicron-diameter quantum-dot micropillars for cavity QED experiments
N. Gregersen, M. Lermer, S. Reitzenstein, S. Höfling, J. Mørk, L. Worschech, M. Kamp, and A. Forchel
Proc. SPIE, Physics and Simulation of Optoelectronic Devices XXI, 86190X (2013), DOI: 10.1117/12.2004137

Complete tomography of a high-fidelity solid-state entangled spin-photon qubit pair
K. de Greve, P. L. McMahon, L. Yu, J. S. Pelc, C. Jones, C. M. Natarajan, N. Y. Kim, E. Abe, S. Maier, C. Schneider, M. Kamp, S. Höfling, R. H. Hadfield, A. Forchel, M. M. Fejer, and Y. Yamamoto
Nat. Commun. 4, 2228 (2013), DOI: 10.1038/ncomms3228

Ultrafast optical control of individual electron and hole spin qubits: entanglement between a single quantum dot electron spin and a downconverted 1560-nm single photon
K. de Greve, P. L. McMahon, L. Yu, J. S. Pelc, C. M. Natarajan, D. Press, N. Y. Kim, E. Abe, D. Bisping, S. Maier, C. Schneider, M. Kamp, S. Höfling, R. H. Hadfield, A. Forchel, M. M. Fejer, and Y. Yamamoto
Proc. SPIE, Advances in Photonics of Quantum Computing, Memory, and Communication VI, 86350B (2013), DOI: 10.1117/12.2001931

Indistinguishable tunable single photons emitted by spin-flip Raman transitions in InGaAs quantum dots
Y.-M. He, Y.-M. He, Y.-J. Wei, X. Jiang, M.-C. Chen, F.-L. Xiong, Y. Zhao, C. Schneider, M. Kamp, S. Höfling, C.-Y. Lu, and J.-W. Pan
Phys. Rev. Lett. 111, 237403 (2013), DOI: 10.1103/PhysRevLett.111.237403

On-demand semiconductor single-photon source with near-unity indistinguishability
Y.-M. He, Y.-M. He, Y.-J. Wei, D. Wu, M. Atatüre, C. Schneider, S. Höfling, M. Kamp, C.-Y. Lu, and J.-W. Pan
Nat. Nanotechnol. 8, 213 (2013), DOI: 10.1038/nnano.2012.262

Single spins in semiconductor quantum dot microcavities
S. Höfling, K. de Greve, P. L. McMahon, D. Press, L. Yu, J. S. Pelc, C. M. Natarajan, N. Y. Kim, T. Ladd, E. Abe, S. Maier, D. Bisping, F. Langer, C. Schneider, M. Kamp, R. H. Hadfield, A. Forchel, M. M. Fejer, and Y. Yamamoto
Proc. SPIE, Spintronics VI, 88130F (2013), DOI: 10.1117/12.2025332

Low threshold interband cascade lasers
S. Höfling, R. Weih, A. Bauer, A. Forchel, and M. Kamp
Proc. SPIE, Quantum Sensing and Nanophotonic Devices X, 86311P (2013), DOI: 10.1117/12.2004680

Nonlinear emission characteristics of quantum dot–micropillar lasers in the presence of polarized optical feedback
C. Hopfmann, F. Albert, C. Schneider, S. Höfling, M. Kamp, A. Forchel, I. Kanter, and S. Reitzenstein
New J. Phys. 15, 25030 (2013), DOI: 10.1088/1367-2630/15/2/025030

Temperature Dependence of Highly Excited Exciton Polaritons in Semiconductor Microcavities
T. Horikiri, Y. Matsuo, Y. Shikano, A. Löffler, S. Höfling, A. Forchel, and Y. Yamamoto
J. Phys. Soc. Jpn. 82, 84709 (2013), DOI: 10.7566/JPSJ.82.084709

Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers
F. Janiak, M. Motyka, G. Sęk, M. Dyksik, K. Ryczko, J. Misiewicz, R. Weih, S. Höfling, M. Kamp, and G. Patriarche
J. Appl. Phys. 114, 223510 (2013), DOI: 10.1063/1.4846756

Coherence dynamics and quantum-to-classical crossover in an exciton–cavity system in the quantum strong coupling regime
J. Kasprzak, K. Sivalertporn, F. Albert, C. Schneider, S. Höfling, M. Kamp, A. Forchel, S. Reitzenstein, E. A. Muljarov, and W. Langbein
New J. Phys. 15, 45013 (2013), DOI: 10.1088/1367-2630/15/4/045013

Exciton–polariton condensates near the Dirac point in a triangular lattice
N. Y. Kim, K. Kusudo, A. Löffler, S. Höfling, A. Forchel, and Y. Yamamoto
New J. Phys. 15, 35032 (2013), DOI: 10.1088/1367-2630/15/3/035032

Stochastic formation of polariton condensates in two degenerate orbital states
K. Kusudo, N. Y. Kim, A. Löffler, S. Höfling, A. Forchel, and Y. Yamamoto
Phys. Rev. B 87 (2013), DOI: 10.1103/PhysRevB.87.214503

High beta lasing in micropillar cavities with adiabatic layer design
M. Lermer, N. Gregersen, M. Lorke, E. Schild, P. Gold, J. Mørk, C. Schneider, A. Forchel, S. Reitzenstein, S. Höfling, and M. Kamp
Appl. Phys. Lett. 102, 52114 (2013), DOI: 10.1063/1.4791563

Intensity fluctuations in bimodal micropillar lasers enhanced by quantum-dot gain competition
H. A. M. Leymann, C. Hopfmann, F. Albert, A. Foerster, M. Khanbekyan, C. Schneider, S. Höfling, A. Forchel, M. Kamp, J. Wiersig, and S. Reitzenstein
Phys. Rev. A 87 (2013), DOI: 10.1103/PhysRevA.87.053819

Microring Diode Laser for THz Generation
S. Mariani, J.-M. Gerard, T. Wang, P. U. Jepsen, G. Leo, A. Andronico, I. Favero, S. Ducci, Y. Todorov, C. Sirtori, M. Kamp, M. Munsch, and J. Claudon
IEEE Trans. THz Sci. Technol. 3, 472 (2013), DOI: 10.1109/TTHZ.2013.2255048

Spontaneous emission control of single quantum dots by electrostatic tuning of a double-slab photonic crystal cavity
L. Midolo, F. Pagliano, T. B. Hoang, T. Xia, F. W. M. van Otten, L. Li, E. H. Linfield, M. Lermer, S. Höfling, and A. Fiore
Proc. SPIE, Photonic and Phononic Properties of Engineered Nanostructures III, 86320P (2013), DOI: 10.1117/12.2001611

Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells
A. Mika, G. Sęk, K. Ryczko, M. Kozub, A. Musiał, A. Maryński, J. Misiewicz, F. Langer, S. Höfling, T. Appel, M. Kamp, and A. Forchel
Opt. Appl. (2013), DOI: 10.5277/OA130107

Effect of Confinement Anisotropy on Excitonic Properties in InAs/InP Quantum Dashes
P. Mrowiński, A. Musiał, G. Sęk, J. Misiewicz, S. Höfling, A. Somers, S. Hein, and A. Forchel
Acta Phys. Pol. A 124, 801 (2013), DOI: 10.12693/APhysPolA.124.801

Unconventional growth mechanism for monolithic integration of III-V on silicon
K. W. Ng, W. S. Ko, T.-T. D. Tran, R. Chen, M. V. Nazarenko, F. Lu, V. G. Dubrovskii, M. Kamp, A. Forchel, and C. J. Chang-Hasnain
ACS Nano 7, 100 (2013), DOI: 10.1021/nn3028166

GaAs-Based Quantum Well Exciton-Polaritons beyond 1 μm
M. Pieczarka, P. Podemski, A. Musiał, K. Ryczko, G. Sęk, J. Misiewicz, F. Langer, S. Höfling, M. Kamp, and A. Forchel
Acta Phys. Pol. A 124, 817 (2013), DOI: 10.12693/APhysPolA.124.817

Magnetic-field interaction of spatially confined quantum-well exciton-polaritons
A. Rahimi-Iman, C. Schneider, J. Fischer, S. Holzinger, M. Amthor, L. Worschech, S. Reitzenstein, S. Höfling, A. Forchel, and M. Kamp
J. Phys.: Conf. Ser. 456, 12033 (2013), DOI: 10.1088/1742-6596/456/1/012033

Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k·p modeling
K. Ryczko, G. Sęk, P. Sitarek, A. Mika, J. Misiewicz, F. Langer, S. Höfling, A. Forchel, and M. Kamp
J. Appl. Phys. 113, 233508 (2013), DOI: 10.1063/1.4810920

Waveguide superconducting single-photon autocorrelators for quantum photonic applications
D. Sahin, A. Gaggero, G. Frucci, S. Jahanmirinejad, J. P. Sprengers, F. Mattioli, R. Leoni, J. Beetz, M. Lermer, M. Kamp, S. Höfling, and A. Fiore
Proc. SPIE, Advances in Photonics of Quantum Computing, Memory, and Communication VI, 86351B (2013), DOI: 10.1117/12.2004510

Integrated autocorrelator based on superconducting nanowires
D. Sahin, A. Gaggero, T. B. Hoang, G. Frucci, F. Mattioli, R. Leoni, J. Beetz, M. Lermer, M. Kamp, S. Höfling, and A. Fiore
Opt. Express, OE 21, 11162 (2013), DOI: 10.1364/OE.21.011162

Waveguide photon-number-resolving detectors for quantum photonic integrated circuits
D. Sahin, A. Gaggero, Z. Zhou, S. Jahanmirinejad, F. Mattioli, R. Leoni, J. Beetz, M. Lermer, M. Kamp, S. Höfling, and A. Fiore
Appl. Phys. Lett. 103, 111116 (2013), DOI: 10.1063/1.4820842

Mode selection in electrically driven quantum dot microring cavities
A. Schlehahn, F. Albert, C. Schneider, S. Höfling, S. Reitzenstein, J. Wiersig, and M. Kamp
Opt. Express, OE 21, 15951 (2013), DOI: 10.1364/OE.21.015951

Determination of operating parameters for a GaAs-based polariton laser
J. Schmutzler, F. Veit, M. Aßmann, J.-S. Tempel, S. Höfling, M. Kamp, A. Forchel, and M. Bayer
Appl. Phys. Lett. 102, 81115 (2013), DOI: 10.1063/1.4794144

An electrically pumped polariton laser
C. Schneider, A. Rahimi-Iman, N. Y. Kim, J. Fischer, I. G. Savenko, M. Amthor, M. Lermer, A. Wolf, L. Worschech, V. D. Kulakovskii, I. A. Shelykh, M. Kamp, S. Reitzenstein, A. Forchel, Y. Yamamoto, and S. Höfling
Nature 497, 348 (2013), DOI: 10.1038/nature12036

Recent advances in GaSb-based structures for mid-infrared emitting lasers: spectroscopic study
G. Sęk, M. Motyka, F. Janiak, K. Ryczko, J. Misiewicz, A. Bauer, M. Dallner, R. Weih, S. Höfling, A. Forchel, S. Belahsene, G. Boissier, and Y. Rouillard
Proc. SPIE, Quantum Sensing and Nanophotonic Devices X, 86312O (2013), DOI: 10.1117/12.2016699

Spin and density patterns of polariton condensates resonantly excited in strained planar microcavities with a nonuniform potential landscape
A. V. Sekretenko, S. S. Gavrilov, S. I. Novikov, V. D. Kulakovskii, S. Höfling, C. Schneider, M. Kamp, and A. Forchel
Phys. Rev. B 88 (2013), DOI: 10.1103/PhysRevB.88.205302

On-chip quantum optics with quantum dot microcavities
E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein
Adv. Mater. 25, 707 (2013), DOI: 10.1002/adma.201202778

Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots
M. Syperek, M. Baranowski, G. Sęk, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, M. Kamp, and A. Forchel
Phys. Rev. B 87 (2013), DOI: 10.1103/PhysRevB.87.125305

Interband cascade lasers with AlGaAsSb bulk cladding layers
R. Weih, A. Bauer, M. Kamp, and S. Höfling
Opt. Mater. Express 3, 1624 (2013), DOI: 10.1364/OME.3.001624

Interband cascade lasers with room temperature threshold current densities below 100 A/cm 2
R. Weih, M. Kamp, and S. Höfling
Appl. Phys. Lett. 102, 231123 (2013), DOI: 10.1063/1.4811133

Electroluminescence from spatially confined exciton polaritons in a textured microcavity
K. Winkler, C. Schneider, J. Fischer, A. Rahimi-Iman, M. Amthor, A. Forchel, S. Reitzenstein, S. Höfling, and M. Kamp
Appl. Phys. Lett. 102, 41101 (2013), DOI: 10.1063/1.4777564

Nach oben

Directional whispering gallery mode emission from Limaçon-shaped electrically pumped quantum dot micropillar lasers
F. Albert, C. Hopfmann, A. Eberspächer, F. Arnold, M. Emmerling, C. Schneider, S. Höfling, A. Forchel, M. Kamp, J. Wiersig, and S. Reitzenstein
Appl. Phys. Lett. 101, 21116 (2012), DOI: 10.1063/1.4733726

Quantum dot microlasers with external feedback: a chaotic system close to the quantum limit
F. Albert, C. Hopfmann, C. Schneider, S. Höfling, L. Worschech, M. Kamp, W. Kinzel, A. Forchel, S. Reitzenstein, and I. Kanter
Proc. SPIE, Semiconductor Lasers and Laser Dynamics V, 84320G (2012), DOI: 10.1117/12.921783

Quantum dot-Microlasers with external feedback - A chaotic system close to the quantum limit
F. Albert, C. Hopfmann, C. Schneider, S. Höfling, L. Worschech, M. Kamp, W. Kinzel, A. Forchel, S. Reitzenstein, and I. Kanter
IEE Conf. Proc., 23rd IEEE International Semiconductor Laser Conference (ISLC 2012), 128 (2012), DOI: 10.1109/ISLC.2012.6348362

All-optical control of quantized momenta on a polariton staircase
M. Aßmann, F. Veit, M. Bayer, A. Löffler, S. Höfling, M. Kamp, and A. Forchel
Phys. Rev. B 85 (2012), DOI: 10.1103/PhysRevB.85.155320

Enhanced spontaneous emission from quantum dots in short photonic crystal waveguides
T. Ba Hoang, J. Beetz, L. Midolo, M. Skacel, M. Lermer, M. Kamp, S. Höfling, L. Balet, N. Chauvin, and A. Fiore
Appl. Phys. Lett. 100, 61122 (2012), DOI: 10.1063/1.3683541

Laser mode feeding by shaking quantum dots in a planar microcavity
C. Brüggemann, A. V. Akimov, A. V. Scherbakov, M. Bombeck, C. Schneider, S. Höfling, A. Forchel, D. R. Yakovlev, and M. Bayer
Nat. Photonics 6, 30 (2012), DOI: 10.1038/nphoton.2011.269

Single photon emission in the red spectral range from a GaAs-based self-assembled quantum dot
Ł. Dusanowski, A. Golnik, M. Syperek, M. Nawrocki, G. Sęk, J. Misiewicz, T. W. Schlereth, C. Schneider, S. Höfling, M. Kamp, and A. Forchel
Appl. Phys. Lett. 101, 103108 (2012), DOI: 10.1063/1.4750241

Multiexcitonic emission from single elongated InGaAs/GaAs quantum dots
Ł. Dusanowski, G. Sęk, A. Musiał, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, and A. Forchel
J. Appl. Phys. 111, 63522 (2012), DOI: 10.1063/1.3695458

Single mode quantum cascade lasers with shallow-etched distributed Bragg reflector
P. Fuchs, J. Friedl, S. Höfling, J. Koeth, A. Forchel, L. Worschech, and M. Kamp
Opt. Express, OE 20, 3890 (2012), DOI: 10.1364/OE.20.003890

Single quantum dot photocurrent spectroscopy in the cavity quantum electrodynamics regime
P. Gold, M. Gschrey, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein
Phys. Rev. B 86 (2012), DOI: 10.1103/PhysRevB.86.161301

Quantum-dot spin-photon entanglement via frequency downconversion to telecom wavelength
K. de Greve, L. Yu, P. L. McMahon, J. S. Pelc, C. M. Natarajan, N. Y. Kim, E. Abe, S. Maier, C. Schneider, M. Kamp, S. Höfling, R. H. Hadfield, A. Forchel, M. M. Fejer, and Y. Yamamoto
Nature 491, 421 (2012), DOI: 10.1038/nature11577

Characterization of GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer as 1.3 μm photo sensors
F. Hartmann, F. Langer, D. Bisping, A. Musterer, S. Höfling, M. Kamp, A. Forchel, and L. Worschech
Proc. SPIE, Infrared Remote Sensing and Instrumentation XX, 85110G (2012), DOI: 10.1117/12.931118

GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing
F. Hartmann, F. Langer, D. Bisping, A. Musterer, S. Höfling, M. Kamp, A. Forchel, and L. Worschech
Appl. Phys. Lett. 100, 172113 (2012), DOI: 10.1063/1.4709421

Quantum key distribution using quantum dot single-photon emitting diodes in the red and near infrared spectral range
T. Heindel, C. A. Kessler, M. Rau, C. Schneider, M. Fürst, F. Hargart, W.-M. Schulz, M. Eichfelder, R. Roßbach, S. Nauerth, M. Lermer, H. Weier, M. Jetter, M. Kamp, S. Reitzenstein, S. Höfling, P. Michler, H. Weinfurter, and A. Forchel
New J. Phys. 14, 83001 (2012), DOI: 10.1088/1367-2630/14/8/083001

Widely tunable, efficient on-chip single photon sources at telecommunication wavelengths
T. B. Hoang, J. Beetz, M. Lermer, L. Midolo, M. Kamp, S. Höfling, and A. Fiore
Opt. Express, OE 20, 21758 (2012), DOI: 10.1364/OE.20.021758

Single photon sources for quantum information applications
S. Höfling, C. Schneider, T. Heindel, M. Lermer, T. B. Hoang, J. Beetz, T. Braun, L. Balet, N. Chauvin, L. Li, S. Reitzenstein, A. Fiore, M. Kamp, and A. Forchel
Proc. SPIE, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX, 82710D (2012), DOI: 10.1117/12.912969

Interband cascade lasers for sensing operating in continuous wave mode at room temperature
S. Höfling, R. Weih, A. Bauer, M. Kamp, and A. Forchel
Proc. SPIE, Infrared Remote Sensing and Instrumentation XX, 85110F (2012), DOI: 10.1117/12.931119

Room temperature continuous wave interband cascade lasers for gas sensing
S. Höfling, R. Weih, A. Bauer, M. Kamp, and A. Forchel
Proc. SPIE, Semiconductor Lasers and Laser Dynamics V, 84320N (2012), DOI: 10.1117/12.922210

Increasing the optical transition oscillator strength in GaSb-based type II quantum wells
F. Janiak, G. Sęk, M. Motyka, K. Ryczko, J. Misiewicz, A. Bauer, S. Höfling, M. Kamp, and A. Forchel
Appl. Phys. Lett. 100, 231908 (2012), DOI: 10.1063/1.4726423

Atomic-scale confinement of resonant optical fields
J. Kern, S. Grossmann, N. V. Tarakina, T. Häckel, M. Emmerling, M. Kamp, J.-S. Huang, P. Biagioni, J. C. Prangsma, and B. Hecht
Nano Lett. 12, 5504 (2012), DOI: 10.1021/nl302315g

Single photon emission from InGaN/GaN quantum dots up to 50 K
S. Kremling, C. Tessarek, H. Dartsch, S. Figge, S. Höfling, L. Worschech, C. Kruse, D. Hommel, and A. Forchel
Appl. Phys. Lett. 100, 61115 (2012), DOI: 10.1063/1.3683521

Magnetic field control of polarized polariton condensates in rectangular microcavity pillars
V. D. Kulakovskii, A. S. Brichkin, S. V. Novikov, C. Schneider, S. Höfling, M. Kamp, A. Forchel, and N. A. Gippius
Phys. Rev. B 85 (2012), DOI: 10.1103/PhysRevB.85.155322

Bloch-wave engineering of quantum dot micropillars for cavity quantum electrodynamics experiments
M. Lermer, N. Gregersen, F. Dunzer, S. Reitzenstein, S. Höfling, J. Mørk, L. Worschech, M. Kamp, and A. Forchel
Phys. Rev. Lett. 108, 57402 (2012), DOI: 10.1103/PhysRevLett.108.057402

Sensing of formaldehyde using a distributed feedback interband cascade laser emitting around 3493 nm
S. Lundqvist, P. Kluczynski, R. Weih, M. von Edlinger, L. Nähle, M. Fischer, A. Bauer, S. Höfling, and J. Koeth
Appl. Opt. 51, 6009 (2012), DOI: 10.1364/AO.51.006009

Multi-dimensional laser spectroscopy of exciton polaritons with spatial light modulators
P. Mai, B. Pressl, M. Sassermann, Z. Vörös, G. Weihs, C. Schneider, A. Löffler, S. Höfling, and A. Forchel
Appl. Phys. Lett. 100, 72109 (2012), DOI: 10.1063/1.3687180

Paramagnetic shift in thermally annealed Cd x Zn 1− x Se quantum dots
E. Margapoti, F. M. Alves, S. Mahapatra, V. Lopez-Richard, L. Worschech, K. Brunner, F. Qu, C. Destefani, E. Menéndez-Proupin, C. Bougerol, A. Forchel, and G. E. Marques
New J. Phys. 14, 43038 (2012), DOI: 10.1088/1367-2630/14/4/043038

Exciton–polariton condensates with flat bands in a two-dimensional kagome lattice
N. Masumoto, N. Y. Kim, T. Byrnes, K. Kusudo, A. Löffler, S. Höfling, A. Forchel, and Y. Yamamoto
New J. Phys. 14, 65002 (2012), DOI: 10.1088/1367-2630/14/6/065002

Subthreshold swings below 60 mV/dec in three-terminal nanojunctions at room temperature
C. R. Müller, L. Worschech, and A. Forchel
Appl. Phys. Lett. 101, 133504 (2012), DOI: 10.1063/1.4754850

Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes
M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. W. Schlereth, M. Pieczarka, S. Höfling, M. Kamp, A. Forchel, and S. Reitzenstein
Appl. Phys. Lett. 100, 31111 (2012), DOI: 10.1063/1.3678031

Carrier trapping and luminescence polarization in quantum dashes
A. Musiał, P. Kaczmarkiewicz, G. Sęk, P. Podemski, P. Machnikowski, J. Misiewicz, S. Hein, S. Höfling, and A. Forchel
Phys. Rev. B 85 (2012), DOI: 10.1103/PhysRevB.85.035314

Height-driven linear polarization of the surface emission from quantum dashes
A. Musiał, P. Podemski, G. Sęk, P. Kaczmarkiewicz, J. Andrzejewski, P. Machnikowski, J. Misiewicz, S. Hein, A. Somers, S. Höfling, J. P. Reithmaier, and A. Forchel
Semicond. Sci. Technol. 27, 105022 (2012), DOI: 10.1088/0268-1242/27/10/105022

Downconversion quantum interface for a single quantum dot spin and 1550-nm single-photon channel
J. S. Pelc, L. Yu, K. de Greve, P. L. McMahon, C. M. Natarajan, V. Esfandyarpour, S. Maier, C. Schneider, M. Kamp, S. Höfling, R. H. Hadfield, A. Forchel, Y. Yamamoto, and M. M. Fejer
Opt. Express, OE 20, 27510 (2012), DOI: 10.1364/OE.20.027510

Electrically connected resonant optical antennas
J. C. Prangsma, J. Kern, A. G. Knapp, S. Grossmann, M. Emmerling, M. Kamp, and B. Hecht
Nano Lett. 12, 3915 (2012), DOI: 10.1021/nl3007374

Coherence signatures and density-dependent interaction in a dynamical exciton-polariton condensate
A. Rahimi-Iman, A. V. Chernenko, J. Fischer, S. Brodbeck, M. Amthor, C. Schneider, A. Forchel, S. Höfling, S. Reitzenstein, and M. Kamp
Phys. Rev. B 86 (2012), DOI: 10.1103/PhysRevB.86.155308

Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy
R. Rödel, A. Bauer, S. Kremling, S. Reitzenstein, S. Höfling, M. Kamp, L. Worschech, and A. Forchel
Nanotechnology 23, 15605 (2012), DOI: 10.1088/0957-4484/23/1/015605

Power-law decay of the spatial correlation function in exciton-polariton condensates
G. Roumpos, M. Lohse, W. H. Nitsche, J. Keeling, M. H. Szymanska, P. B. Littlewood, A. Löffler, S. Höfling, L. Worschech, A. Forchel, and Y. Yamamoto
Proc. Natl. Acad. Sci. U. S. A. 109, 6467 (2012), DOI: 10.1073/pnas.1107970109

On the oscillator strength in dilute nitride quantum wells on GaAs
K. Ryczko, G. Sęk, J. Misiewicz, F. Langer, S. Höfling, and M. Kamp
J. Appl. Phys. 111, 123503 (2012), DOI: 10.1063/1.4729320

Microcavity enhanced single photon emission from an electrically driven site-controlled quantum dot
C. Schneider, T. Heindel, A. Huggenberger, T. A. Niederstrasser, S. Reitzenstein, A. Forchel, S. Höfling, and M. Kamp
Appl. Phys. Lett. 100, 91108 (2012), DOI: 10.1063/1.3689782

In(Ga)As/GaAs site-controlled quantum dots with tailored morphology and high optical quality
C. Schneider, A. Huggenberger, M. Gschrey, P. Gold, S. Rodt, A. Forchel, S. Reitzenstein, S. Höfling, and M. Kamp
Phys. Status Solidi A 209, 2379 (2012), DOI: 10.1002/pssa.201228373

AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation
C. Schneider, S. Kremling, N. V. Tarakina, T. Braun, M. Adams, M. Lermer, S. Reitzenstein, L. Worschech, M. Kamp, S. Höfling, and A. Forchel
Semicond. Sci. Technol. 27, 32002 (2012), DOI: 10.1088/0268-1242/27/3/032002

On the mechanisms of energy transfer between quantum well and quantum dashes
G. Sęk, R. Kudrawiec, P. Podemski, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, M. Kamp, and A. Forchel
J. Appl. Phys. 112, 33520 (2012), DOI: 10.1063/1.4743002

Temperature dependence of pulsed polariton lasing in a GaAs microcavity
J.-S. Tempel, F. Veit, M. Aßmann, L. E. Kreilkamp, S. Höfling, M. Kamp, A. Forchel, and M. Bayer
New J. Phys. 14, 83014 (2012), DOI: 10.1088/1367-2630/14/8/083014

Characterization of two-threshold behavior of the emission from a GaAs microcavity
J.-S. Tempel, F. Veit, M. Aßmann, L. E. Kreilkamp, A. Rahimi-Iman, A. Löffler, S. Höfling, S. Reitzenstein, L. Worschech, A. Forchel, and M. Bayer
Phys. Rev. B 85 (2012), DOI: 10.1103/PhysRevB.85.075318

Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots
J. Treu, C. Schneider, A. Huggenberger, T. Braun, S. Reitzenstein, S. Höfling, and M. Kamp
Appl. Phys. Lett. 101, 22102 (2012), DOI: 10.1063/1.4733664

Relaxation dynamics of optically imprinted polariton wires
F. Veit, M. Aßmann, M. Bayer, A. Löffler, S. Höfling, and A. Forchel
Proc. SPIE, Ultrafast Phenomena and Nanophotonics XVI, 82600O (2012), DOI: 10.1117/12.906367

Spatial dynamics of stepwise homogeneously pumped polariton condensates
F. Veit, M. Aßmann, M. Bayer, A. Löffler, S. Höfling, M. Kamp, and A. Forchel
Phys. Rev. B 86 (2012), DOI: 10.1103/PhysRevB.86.195313

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Observing chaos for quantum-dot microlasers with external feedback
F. Albert, C. Hopfmann, S. Reitzenstein, C. Schneider, S. Höfling, L. Worschech, M. Kamp, W. Kinzel, A. Forchel, and I. Kanter
Nat. Commun. 2, 366 (2011), DOI: 10.1038/ncomms1370

From polariton condensates to highly photonic quantum degenerate states of bosonic matter
M. Aßmann, J.-S. Tempel, F. Veit, M. Bayer, A. Rahimi-Iman, A. Löffler, S. Höfling, S. Reitzenstein, L. Worschech, and A. Forchel
Proc. Natl. Acad. Sci. U. S. A. 108, 1804 (2011), DOI: 10.1073/pnas.1009847108

Mid-infrared semiconductor heterostructure lasers for gas sensing applications
A. Bauer, K. Rößner, T. Lehnhardt, M. Kamp, S. Höfling, L. Worschech, and A. Forchel
Semicond. Sci. Technol. 26, 14032 (2011), DOI: 10.1088/0268-1242/26/1/014032

In-plane manipulation of quantum dots in high quality laterally contacted micropillar cavities
J. Beetz, C. Kistner, M. Lermer, C. Schneider, S. Reitzenstein, S. Höfling, M. Kamp, and A. Forchel
Appl. Phys. Lett. 98, 191111 (2011), DOI: 10.1063/1.3589975

Effect of Coulomb interaction on exciton-polariton condensates in GaAs pillar microcavities
A. S. Brichkin, S. I. Novikov, A. V. Larionov, V. D. Kulakovskii, M. M. Glazov, C. Schneider, S. Höfling, M. Kamp, and A. Forchel
Phys. Rev. B 84 (2011), DOI: 10.1103/PhysRevB.84.195301

Development of high-speed directly modulated DFB and DBR lasers with surface gratings
M. Dumitrescu, J. Telkkälä, J. Karinen, J. Viheriälä, A. Laakso, S. Afzal, J. P. Reithmaier, M. Kamp, P. Melanen, P. Uusimaa, P. Bardella, M. Vallone, I. Montrosset, O. Parillaud, M. Krakowski, D. Gready, G. Eisenstein, and G. Sęk
Proc. SPIE, Novel In-Plane Semiconductor Lasers X, 79530D (2011), DOI: 10.1117/12.875674

DFB lasers for sensing applications in the 3.0-3.5 um wavelength range
M. O. Fischer, M. von Edlinger, L. Nähle, J. Koeth, A. Bauer, M. Dallner, S. Höfling, L. Worschech, A. Forchel, S. Belahsene, and Y. Rouillard
Proc. SPIE, Quantum Sensing and Nanophotonic Devices VIII, 79450E (2011), DOI: 10.1117/12.871411

Distributed feedback quantum cascade lasers at 13.8 μm on indium phosphide
P. Fuchs, J. Semmel, J. Friedl, S. Höfling, J. Koeth, L. Worschech, and A. Forchel
Appl. Phys. Lett. 98, 211118 (2011), DOI: 10.1063/1.3593499

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy
L. Geelhaar, C. Chèze, B. Jenichen, O. Brandt, C. Pfüller, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G. P. Dimitrakopulos, T. Karakostas, L. Lari, P. R. Chalker, M. H. Gass, and H. Riechert
IEEE J. Select. Topics Quantum Electron. 17, 878 (2011), DOI: 10.1109/JSTQE.2010.2098396

Ultrafast coherent control and suppressed nuclear feedback of a single quantum dot hole qubit
K. de Greve, P. L. McMahon, D. Press, T. D. Ladd, D. Bisping, C. Schneider, M. Kamp, L. Worschech, S. Höfling, A. Forchel, and Y. Yamamoto
Nat. Phys. 7, 872 (2011), DOI: 10.1038/nphys2078

Nanowatt logic stochastic resonance in branched resonant tunneling diodes
F. Hartmann, A. Forchel, I. Neri, L. Gammaitoni, and L. Worschech
Appl. Phys. Lett. 98, 32110 (2011), DOI: 10.1063/1.3548539

Light-induced stochastic resonance in a nanoscale resonant-tunneling diode
F. Hartmann, L. Gammaitoni, S. Höfling, A. Forchel, and L. Worschech
Appl. Phys. Lett. 98, 242109 (2011), DOI: 10.1063/1.3600329

Acetylene measurement using quantum cascade lasers at 14μm
J. Herbst, B. Scherer, F. Singer, J. Erb, A. Lambrecht, C. Rathke, S. Filip, J. Kappler, P. Fuchs, J. Koeth, J. Friedl, T. W. Schlereth, J. Semmel, S. Höfling, L. Worschech, and A. Forchel
Proc. SPIE, Quantum Sensing and Nanophotonic Devices VIII, 79450J (2011), DOI: 10.1117/12.873765

Optimization and comparison of depth profiling in GaAs and GaSb with TOF-SIMS
A. Herrmann, T. Lehnhardt, M. Strauß, M. Kamp, and A. Forchel
Surf. Interface Anal. 43, 673 (2011), DOI: 10.1002/sia.3659

Single photons emitted by single quantum dots into waveguides: photon guns on a chip
T. B. Hoang, J. Beetz, M. Lermer, M. Kamp, S. Höfling, L. Balet, N. Chauvin, L. Li, and A. Fiore
Quantum Electronics and Laser Science Conference 2011, QFG4 (2011), DOI: 10.1364/QELS.2011.QFG4

Near-infrared semiconductor-nanostructured light detectors
S. Höfling, S. Göpfert, F. Hartmann, C. Schneider, D. Bisping, D. Press, M. Kamp, L. Worschech, and A. Forchel
Proc. SPIE, Infrared Remote Sensing and Instrumentation XIX, 81540G (2011), DOI: 10.1117/12.896424

Narrow spectral linewidth from single site-controlled In(Ga)As quantum dots with high uniformity
A. Huggenberger, S. Heckelmann, C. Schneider, S. Höfling, S. Reitzenstein, L. Worschech, M. Kamp, and A. Forchel
Appl. Phys. Lett. 98, 131104 (2011), DOI: 10.1063/1.3568890

Dynamical d-wave condensation of exciton–polaritons in a two-dimensional square-lattice potential
N. Y. Kim, K. Kusudo, C. Wu, N. Masumoto, A. Löffler, S. Höfling, N. Kumada, L. Worschech, A. Forchel, and Y. Yamamoto
Nat. Phys. 7, 681 (2011), DOI: 10.1038/nphys2012

Nuclear feedback in a single electron-charged quantum dot under pulsed optical control
T. D. Ladd, D. Press, K. de Greve, P. L. McMahon, B. Friess, C. Schneider, M. Kamp, S. Höfling, A. Forchel, and Y. Yamamoto
Proc. SPIE, Advances in Photonics of Quantum Computing, Memory, and Communication IV, 79480U (2011), DOI: 10.1117/12.873978

Influence of GaSb and AlGaInAsSb as Barrier Material on $\sim$2.8-$\mu$m GaSb-Based Diode Laser Properties
T. Lehnhardt, A. Herrmann, M. Kamp, S. Höfling, L. Worschech, and A. Forchel
IEEE Photon. Technol. Lett. 23, 371 (2011), DOI: 10.1109/LPT.2011.2106487

Development of superconducting single-photon detectors for integrated quantum photonics applications
R. Leoni, A. Gaggero, J. P. Sprengers, F. Mattioli, D. Sahin, S. J. Nejad, J. Beetz, M. Lermer, M. Kamp, S. Höfling, and A. Fiore
Proc. SPIE, Optical Complex Systems: OCS11, 81720P (2011), DOI: 10.1117/12.902329

Observation of non-Markovian dynamics of a single quantum dot in a micropillar cavity
K. H. Madsen, S. Ates, T. Lund-Hansen, A. Löffler, S. Reitzenstein, A. Forchel, and P. Lodahl
Phys. Rev. Lett. 106, 233601 (2011), DOI: 10.1103/PhysRevLett.106.233601

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity
M. Motyka, F. Janiak, K. Ryczko, G. Sęk, J. Misiewicz, A. Bauer, R. Weih, S. Höfling, M. Kamp, and A. Forchel
Opto-electron. Rev. 19 (2011), DOI: 10.2478/s11772-011-0016-4

Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio
A. Musiał, G. Sęk, A. Maryński, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, S. Reitzenstein, J. P. Reithmaier, and A. Forchel
Acta Phys. Pol. A 120, 883 (2011), DOI: 10.12693/APhysPolA.120.883

Monolithic tunable GaSb-based lasers at 3.3 [micro sign]m
L. Naehle, C. Zimmermann, S. Belahsene, M. Fischer, G. Boissier, P. Grech, G. Narcy, S. Lundqvist, Y. Rouillard, J. Koeth, M. Kamp, and L. Worschech
Electron. Lett. 47, 1092 (2011), DOI: 10.1049/el.2011.1986

Fe3O4/ZnO: A high-quality magnetic oxide-semiconductor heterostructure by reactive deposition
M. Paul, D. Kufer, A. Müller, S. Brück, E. Goering, M. Kamp, J. Verbeeck, H. Tian, G. van Tendeloo, N. J. C. Ingle, M. Sing, and R. Claessen
Appl. Phys. Lett. 98, 12512 (2011), DOI: 10.1063/1.3540653

Surface structure, morphology, and growth mechanism of Fe 3 O 4 /ZnO thin films
M. Paul, D. Kufer, A. Müller, A. Ruff, M. Kamp, N. J. C. Ingle, M. Sing, and R. Claessen
J. Appl. Phys. 110, 73519 (2011), DOI: 10.1063/1.3644927

1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications
E.-M. Pavelescu, C. Gilfert, P. Weinmann, M. Dănilă, A. Dinescu, M. Jacob, M. Kamp, and J. P. Reithmaier
J. Phys. D: Appl. Phys. 44, 145104 (2011), DOI: 10.1088/0022-3727/44/14/145104

Zeeman splitting and diamagnetic shift of spatially confined quantum-well exciton polaritons in an external magnetic field
A. Rahimi-Iman, C. Schneider, J. Fischer, S. Holzinger, M. Amthor, S. Höfling, S. Reitzenstein, L. Worschech, M. Kamp, and A. Forchel
Phys. Rev. B 84 (2011), DOI: 10.1103/PhysRevB.84.165325

Magneto-optical cavity quantum electrodynamics effects in quantum dot - micropillar systems
S. Reitzenstein, S. Münch, P. Gold, P. Franeck, A. Rahimi-Iman, A. Löffler, S. Höfling, L. Worschech, I. V. Ponomarev, T. L. Reinecke, and A. Forchel
J. Phys.: Conf. Ser. 334, 12011 (2011), DOI: 10.1088/1742-6596/334/1/012011

Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities
S. Reitzenstein, C. Schneider, F. Albert, A. Huggenberger, T. Heindel, M. Lermer, S. Stobbe, P. Weinmann, P. Lodahl, S. Höfling, M. Kamp, L. Worschech, and A. Forchel
Proc. SPIE, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 794702 (2011), DOI: 10.1117/12.876794

Single vortex–antivortex pair in an exciton-polariton condensate
G. Roumpos, M. D. Fraser, A. Löffler, S. Höfling, A. Forchel, and Y. Yamamoto
Nat. Phys. 7, 129 (2011), DOI: 10.1038/nphys1841

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers
G. Sęk, F. Janiak, M. Motyka, K. Ryczko, J. Misiewicz, A. Bauer, S. Höfling, and A. Forchel
Opt. Mater. 33, 1817 (2011), DOI: 10.1016/j.optmat.2011.06.019

Waveguide superconducting single-photon detectors for integrated quantum photonic circuits
J. P. Sprengers, A. Gaggero, D. Sahin, S. Jahanmirinejad, G. Frucci, F. Mattioli, R. Leoni, J. Beetz, M. Lermer, M. Kamp, S. Höfling, R. Sanjines, and A. Fiore
Appl. Phys. Lett. 99, 181110 (2011), DOI: 10.1063/1.3657518

Impact of the localized wetting layer states on carrier relaxation processes in GaAs-based quantum dash structures
M. Syperek, A. Musiał, G. Seęk, P. Podemski, J. Misiewicz, A. Löffler, S. Höfling, L. Worschech, A. Forchel, J. Ihm, and H. Cheong
AIP Conf. Proc., 30th International Conference on the Physics of Semiconductors 1339, 563 (2011), DOI: 10.1063/1.3666504

Extrapolation of the intensity autocorrelation function of a quantum-dot micropillar laser into the thermal emission regime
J.-S. Tempel, I. A. Akimov, M. Aßmann, C. Schneider, S. Höfling, C. Kistner, S. Reitzenstein, L. Worschech, A. Forchel, and M. Bayer
J. Opt. Soc. Am. B 28, 1404 (2011), DOI: 10.1364/JOSAB.28.001404

Dephasing of triplet-sideband optical emission of a resonantly driven InAs/GaAs quantum dot inside a microcavity
S. M. Ulrich, S. Ates, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler
Phys. Rev. Lett. 106, 247402 (2011), DOI: 10.1103/PhysRevLett.106.247402

Highly indistinguishable photons from a quantum dot in a microcavity
S. Weiler, A. Ulhaq, S. M. Ulrich, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler
Phys. Status Solidi B 248, 867 (2011), DOI: 10.1002/pssb.201000781

Quantum-dot-induced phase shift in a pillar microcavity
A. B. Young, R. Oulton, C. Y. Hu, A. C. T. Thijssen, C. Schneider, S. Reitzenstein, M. Kamp, S. Höfling, L. Worschech, A. Forchel, and J. G. Rarity
Phys. Rev. A 84 (2011), DOI: 10.1103/PhysRevA.84.011803

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Whispering gallery mode lasing in electrically driven quantum dot micropillars
F. Albert, T. Braun, T. Heindel, C. Schneider, S. Reitzenstein, S. Höfling, L. Worschech, and A. Forchel
Appl. Phys. Lett. 97, 101108 (2010), DOI: 10.1063/1.3488807

Quantum efficiency and oscillator strength of site-controlled InAs quantum dots
F. Albert, S. Stobbe, C. Schneider, T. Heindel, S. Reitzenstein, S. Höfling, P. Lodahl, L. Worschech, and A. Forchel
Appl. Phys. Lett. 96, 151102 (2010), DOI: 10.1063/1.3393988

Ultrafast tracking of second-order photon correlations in the emission of quantum-dot microresonator lasers
M. Aßmann, F. Veit, M. Bayer, C. Gies, F. Jahnke, S. Reitzenstein, S. Höfling, L. Worschech, and A. Forchel
Phys. Rev. B 81 (2010), DOI: 10.1103/PhysRevB.81.165314

Shortened injector interband cascade lasers for 3.3- to 3.6-μm emission
A. Bauer
Opt. Eng. 49, 111117 (2010), DOI: 10.1117/1.3505831

Atomic scale interface engineering for strain compensated epitaxially grown InAs/AlSb superlattices
A. Bauer, M. Dallner, A. Herrmann, T. Lehnhardt, M. Kamp, S. Höfling, L. Worschech, and A. Forchel
Nanotechnology 21, 455603 (2010), DOI: 10.1088/0957-4484/21/45/455603

Magnetic-field asymmetry of nonlinear mesoscopic transport in channels coupled to a single metallic gate
B. Brandenstein-Köth, L. Worschech, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 42, 2055 (2010), DOI: 10.1016/j.physe.2010.03.025

Direct comparison of catalyst-free and catalyst-induced GaN nanowires
C. Chèze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G. P. Dimitrakopulos, and T. Karakostas
Nano Res. 3, 528 (2010), DOI: 10.1007/s12274-010-0013-9

Widely tunable quantum cascade lasers with coupled cavities for gas detection
P. Fuchs, J. Seufert, J. Koeth, J. Semmel, S. Höfling, L. Worschech, and A. Forchel
Appl. Phys. Lett. 97, 181111 (2010), DOI: 10.1063/1.3514247

Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots
S. Göpfert, L. Worschech, S. Lingemann, C. Schneider, D. Press, S. Höfling, and A. Forchel
Appl. Phys. Lett. 97, 222112 (2010), DOI: 10.1063/1.3520522

Numerical and Experimental Study of the $Q$ Factor of High-$Q$ Micropillar Cavities
N. Gregersen, S. Reitzenstein, C. Kistner, M. Strauss, C. Schneider, S. Höfling, L. Worschech, A. Forchel, T. R. Nielsen, J. Mork, and J.-M. Gerard
IEEE J. Quantum Electron. 46, 1470 (2010), DOI: 10.1109/JQE.2010.2052095

Experimental approach to ultrafast optical spin echo of a single quantum dot electron spin
K. de Greve, D. Press, T. D. Ladd, B. Friess, P. L. McMahon, C. Schneider, M. Kamp, S. Höfling, A. Forchel, and Y. Yamamoto
Proc. SPIE, Advances in Photonics of Quantum Computing, Memory, and Communication III, 76110K (2010), DOI: 10.1117/12.843667

Stochastic resonance in a nanoscale Y-branch switch
F. Hartmann, D. Hartmann, P. Kowalzik, A. Forchel, L. Gammaitoni, and L. Worschech
Appl. Phys. Lett. 96, 172110 (2010), DOI: 10.1063/1.3425669

Magnetic-field-controlled noise-activated switching in a nonlinear three-terminal nanojunction
F. Hartmann, D. Hartmann, P. Kowalzik, L. Gammaitoni, A. Forchel, and L. Worschech
Appl. Phys. Lett. 96, 82108 (2010), DOI: 10.1063/1.3330861

Highly efficient electrically triggered quantum dot micropillar single photon source
T. Heindel, C. Schneider, M. Lermer, S. Höfling, S. Reitzenstein, L. Worschech, and A. Forchel
J. Phys.: Conf. Ser. 245, 12005 (2010), DOI: 10.1088/1742-6596/245/1/012005

Electrically driven quantum dot-micropillar single photon source with 34% overall efficiency
T. Heindel, C. Schneider, M. Lermer, S.-H. Kwon, T. Braun, S. Reitzenstein, S. Höfling, M. Kamp, and A. Forchel
Appl. Phys. Lett. 96, 11107 (2010), DOI: 10.1063/1.3284514

Single photon emission from positioned GaAs/AlGaAs photonic nanowires
J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Höfling, L. Worschech, and A. Forchel
Appl. Phys. Lett. 96, 211117 (2010), DOI: 10.1063/1.3440967

Semiconductor quantum light emitters and sensors
S. Höfling, T. Heindel, C. Kistner, C. Schneider, M. Lermer, S. Reitzenstein, M. Kamp, and A. Forchel
Proc. SPIE, Quantum Sensing and Nanophotonic Devices VII, 760804 (2010), DOI: 10.1117/12.846856

Higher order coherence of exciton-polariton condensates
T. Horikiri, P. Schwendimann, A. Quattropani, S. Höfling, A. Forchel, and Y. Yamamoto
Phys. Rev. B 81 (2010), DOI: 10.1103/PhysRevB.81.033307

Atomically flat single-crystalline gold nanostructures for plasmonic nanocircuitry
J.-S. Huang, V. Callegari, P. Geisler, C. Brüning, J. Kern, J. C. Prangsma, X. Wu, T. Feichtner, J. Ziegler, P. Weinmann, M. Kamp, A. Forchel, P. Biagioni, U. Sennhauser, and B. Hecht
Nat. Commun. 1, 150 (2010), DOI: 10.1038/ncomms1143

Mode imaging and selection in strongly coupled nanoantennas
J.-S. Huang, J. Kern, P. Geisler, P. Weinmann, M. Kamp, A. Forchel, P. Biagioni, and B. Hecht
Nano Lett. 10, 2105 (2010), DOI: 10.1021/nl100614p

Whispering gallery mode lasing in high quality GaAs/AlAs pillar microcavities
P. Jaffrennou, J. Claudon, M. Bazin, N. S. Malik, S. Reitzenstein, L. Worschech, M. Kamp, A. Forchel, and J.-M. Gerard
Appl. Phys. Lett. 96, 71103 (2010), DOI: 10.1063/1.3315869

On-chip beam steering
M. Kamp
Nat. Photonics 4, 411 (2010), DOI: 10.1038/nphoton.2010.144

Up on the Jaynes-Cummings ladder of a quantum-dot/microcavity system
J. Kasprzak, S. Reitzenstein, E. A. Muljarov, C. Kistner, C. Schneider, M. Strauss, S. Höfling, A. Forchel, and W. Langbein
Nat. Mater. 9, 304 (2010), DOI: 10.1038/nmat2717

Up on the Jaynes-Cummings ladder of an exciton-cavity system
J. Kasprzak, S. Reitzenstein, E. A. Muljarov, C. Kistner, C. Schneider, M. Strauss, S. Höfling, A. Forchel, and W. Langbein
Proc. SPIE, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 760015 (2010), DOI: 10.1117/12.838372

Strong coupling in a quantum dot micropillar system under electrical current injection
C. Kistner, K. Morgener, S. Reitzenstein, C. Schneider, S. Höfling, L. Worschech, A. Forchel, P. Yao, and S. Hughes
Appl. Phys. Lett. 96, 221102 (2010), DOI: 10.1063/1.3442912

Spontaneously Localized Photonic Modes Due to Disorder in the Dielectric Constant
Y. Kodriano, D. Gershoni, E. Linder, B. Shapiro, M. E. Raikh, J. P. Reithmaier, S. Reitzenstein, A. Löffler, A. Forchel, M. Caldas, and N. Studart
AIP Conf. Proc., 29th International Conference on the Physics of Semiconductors 1199, 259 (2010), DOI: 10.1063/1.3295397

Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes
R. Kudrawiec, G. Sęk, M. Motyka, J. Misiewicz, A. Somers, S. Höfling, L. Worschech, and A. Forchel
J. Appl. Phys. 108, 86106 (2010), DOI: 10.1063/1.3483948

Pulsed nuclear pumping and spin diffusion in a single charged quantum dot
T. D. Ladd, D. Press, K. de Greve, P. L. McMahon, B. Friess, C. Schneider, M. Kamp, S. Höfling, A. Forchel, and Y. Yamamoto
Phys. Rev. Lett. 105, 107401 (2010), DOI: 10.1103/PhysRevLett.105.107401

Polarized nonequilibrium Bose-Einstein condensates of spinor exciton polaritons in a magnetic field
A. V. Larionov, V. D. Kulakovskii, S. Höfling, C. Schneider, L. Worschech, and A. Forchel
Phys. Rev. Lett. 105, 256401 (2010), DOI: 10.1103/PhysRevLett.105.256401

Tunable Long Wavelength ($\sim$2.8 $\mu$m) GaInAsSb–GaSb Quantum-Well Binary Superimposed Grating Lasers
T. Lehnhardt, S. Höfling, M. Kamp, L. Worschech, and A. Forchel
IEEE Photon. Technol. Lett. (2010), DOI: 10.1109/LPT.2010.2078495

Characterization of spin-state tuning in thermally annealed semiconductor quantum dots
E. Margapoti, F. M. Alves, S. Mahapatra, T. Schmidt, V. Lopez-Richard, C. Destefani, E. Menéndez-Proupin, F. Qu, C. Bougerol, K. Brunner, A. Forchel, G. E. Marques, and L. Worschech
Phys. Rev. B 82 (2010), DOI: 10.1103/PhysRevB.82.205318

Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdxZn1−xSe
D. Mourad, G. Czycholl, C. Kruse, S. Klembt, R. Retzlaff, D. Hommel, M. Gartner, and M. Anastasescu
Phys. Rev. B 82, 165204 (2010), DOI: 10.1103/PhysRevB.82.165204

Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
S. Münch, S. Reitzenstein, M. Borgström, C. Thelander, L. Samuelson, L. Worschech, and A. Forchel
Nanotechnology 21, 105711 (2010), DOI: 10.1088/0957-4484/21/10/105711

Excitonic complexes in InGaAs/GaAs quantum dash structures
A. Musiał, G. Sęk, P. Podemski, M. Syperek, J. Misiewicz, A. Löffler, S. Höfling, and A. Forchel
J. Phys.: Conf. Ser. 245, 12054 (2010), DOI: 10.1088/1742-6596/245/1/012054

Mid infrared interband cascade lasers for sensing applications
L. Nähle, P. Fuchs, M. Fischer, J. Koeth, A. Bauer, M. Dallner, F. Langer, S. Höfling, and A. Forchel
Appl. Phys. B 100, 275 (2010), DOI: 10.1007/s00340-010-3899-8

Ultrafast optical spin echo in a single quantum dot
D. Press, K. de Greve, P. L. McMahon, T. D. Ladd, B. Friess, C. Schneider, M. Kamp, S. Höfling, A. Forchel, and Y. Yamamoto
Nat. Photonics 4, 367 (2010), DOI: 10.1038/nphoton.2010.83

Polarization-dependent strong coupling in elliptical high- Q micropillar cavities
S. Reitzenstein, C. Böckler, A. Löffler, S. Höfling, L. Worschech, A. Forchel, P. Yao, and S. Hughes
Phys. Rev. B 82 (2010), DOI: 10.1103/PhysRevB.82.235313

Quantum dot micropillars
S. Reitzenstein and A. Forchel
J. Phys. D: Appl. Phys. 43, 33001 (2010), DOI: 10.1088/0022-3727/43/3/033001

cQED enhanced light detection and emission in electrically contacted quantum dot micropillars
S. Reitzenstein, C. Kistner, T. Heindel, C. Schneider, M. Lermer, T. Braun, S. Höfling, L. Worschech, and A. Forchel
Proc. SPIE, Infrared Remote Sensing and Instrumentation XVIII, 78080E (2010), DOI: 10.1117/12.861405

Exciton spin state mediated photon-photon coupling in a strongly coupled quantum dot microcavity system
S. Reitzenstein, S. Münch, P. Franeck, A. Löffler, S. Höfling, L. Worschech, A. Forchel, I. V. Ponomarev, and T. L. Reinecke
Phys. Rev. B 82 (2010), DOI: 10.1103/PhysRevB.82.121306

Intrinsic feedback and bistable switching in Y-branched nanojunctions
S. Reitzenstein, L. Worschech, D. Hartmann, and A. Forchel
Phys. Rev. B 81 (2010), DOI: 10.1103/PhysRevB.81.153411

Gain-induced trapping of microcavity exciton polariton condensates
G. Roumpos, W. H. Nitsche, S. Höfling, A. Forchel, and Y. Yamamoto
Phys. Rev. Lett. 104, 126403 (2010), DOI: 10.1103/PhysRevLett.104.126403

Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes
G. Sęk, A. Musiał, P. Podemski, M. Syperek, J. Misiewicz, A. Löffler, S. Höfling, L. Worschech, and A. Forchel
J. Appl. Phys. 107, 96106 (2010), DOI: 10.1063/1.3366704

Large quantum dots with small oscillator strength
S. Stobbe, T. W. Schlereth, S. Höfling, A. Forchel, J. M. Hvam, and P. Lodahl
Phys. Rev. B 82 (2010), DOI: 10.1103/PhysRevB.82.233302

Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well
M. Syperek, R. Kudrawiec, M. Baranowski, G. Sęk, J. Misiewicz, D. Bisping, B. Marquardt, A. Forchel, and M. Fischer
Appl. Phys. Lett. 96, 41911 (2010), DOI: 10.1063/1.3299258

Non-resonant cavity-quantum dot coupling
A. Ulhaq, S. Ates, S. M. Ulrich, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler
J. Phys.: Conf. Ser. 210, 12058 (2010), DOI: 10.1088/1742-6596/210/1/012058

Linewidth broadening and emission saturation of a resonantly excited quantum dot monitored via an off-resonant cavity mode
A. Ulhaq, S. Ates, S. Weiler, S. M. Ulrich, S. Reitzenstein, A. Löffler, S. Höfling, L. Worschech, A. Forchel, and P. Michler
Phys. Rev. B 82 (2010), DOI: 10.1103/PhysRevB.82.045307

Highly anisotropic decay rates of single quantum dots in photonic crystal membranes
Q. Wang, S. Stobbe, H. Thyrrestrup, H. Hofmann, M. Kamp, T. W. Schlereth, S. Höfling, and P. Lodahl
Opt. Lett., OL 35, 2768 (2010), DOI: 10.1364/OL.35.002768

Emission characteristics of a highly correlated system of a quantum dot coupled to two distinct micropillar cavity modes
S. Weiler, A. Ulhaq, S. M. Ulrich, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler
Phys. Rev. B 82 (2010), DOI: 10.1103/PhysRevB.82.205326

Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode
L. Worschech, F. Hartmann, T. Y. Kim, S. Höfling, M. Kamp, A. Forchel, J. Ahopelto, I. Neri, A. Dari, and L. Gammaitoni
Appl. Phys. Lett. 96, 42112 (2010), DOI: 10.1063/1.3302457

Nonlinear photoluminescence spectra from a quantum-dot–cavity system: Interplay of pump-induced stimulated emission and anharmonic cavity QED
P. Yao, P. K. Pathak, E. Illes, S. Hughes, S. Münch, S. Reitzenstein, P. Franeck, A. Löffler, T. Heindel, S. Höfling, L. Worschech, and A. Forchel
Phys. Rev. B 81 (2010), DOI: 10.1103/PhysRevB.81.033309

High power DFB laser diodes
W. Zeller, M. Kamp, and J. Koeth
Proc. SPIE, High-Power Diode Laser Technology and Applications VIII, 75830R (2010), DOI: 10.1117/12.840400

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Ultrafast intensity correlation measurements of quantum dot microcavity lasers
M. Aßmann, T. Berstermann, J. Wiersig, C. Gies, F. Jahnke, C. Kistner, S. Reitzenstein, A. Forchel, and M. Bayer
Phys. Status Solidi C 6, 399 (2009), DOI: 10.1002/pssc.200880355

Coherence length of high- β semiconductor microcavity lasers
S. Ates, C. Gies, S. M. Ulrich, J. Wiersig, S. Reitzenstein, A. Löffler, A. Forchel, F. Jahnke, and P. Michler
Phys. Status Solidi C 6, 568 (2009), DOI: 10.1002/pssc.200880332

Post-selected indistinguishable photons from the resonance fluorescence of a single quantum dot in a microcavity
S. Ates, S. M. Ulrich, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler
Phys. Rev. Lett. 103, 167402 (2009), DOI: 10.1103/PhysRevLett.103.167402

Non-resonant dot–cavity coupling and its potential for resonant single-quantum-dot spectroscopy
S. Ates, S. M. Ulrich, A. Ulhaq, S. Reitzenstein, A. Löffler, S. Höfling, A. Forchel, and P. Michler
Nat. Photonics 3, 724 (2009), DOI: 10.1038/nphoton.2009.215

Emission wavelength tuning of interband cascade lasers in the 3–4 μm spectral range
A. Bauer, F. Langer, M. Dallner, M. Kamp, M. Motyka, G. Sęk, K. Ryczko, J. Misiewicz, S. Höfling, and A. Forchel
Appl. Phys. Lett. 95, 251103 (2009), DOI: 10.1063/1.3270002

Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6μm
D. Bisping, D. Pucicki, M. Fischer, S. Höfling, and A. Forchel
J. Cryst. Growth 311, 1715 (2009), DOI: 10.1016/j.jcrysgro.2008.09.206

GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications
D. Bisping, D. Pucicki, M. Fischer, J. Koeth, C. Zimmermann, P. Weinmann, S. Höfling, M. Kamp, and A. Forchel
IEEE J. Select. Topics Quantum Electron. 15, 968 (2009), DOI: 10.1109/JSTQE.2009.2014250

Magnetic-field asymmetry of nonlinear transport in narrow channels with asymmetric hybrid confinement
B. Brandenstein-Köth, L. Worschech, and A. Forchel
Appl. Phys. Lett. 95, 62106 (2009), DOI: 10.1063/1.3204462

The structural and optical characterization of high areal density Ga(x)In(1-x)P quantum dots on GaP
S. Gerhard, V. Baumann, S. Höfling, and A. Forchel
Nanotechnology 20, 434016 (2009), DOI: 10.1088/0957-4484/20/43/434016

Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55-$\mu$m Quantum-Dash Lasers
S. Hein, S. Höfling, and A. Forchel
IEEE Photon. Technol. Lett. 21, 528 (2009), DOI: 10.1109/LPT.2009.2014076

Orientation dependent emission properties of columnar quantum dash laser structures
S. Hein, P. Podemski, G. Sęk, J. Misiewicz, P. Ridha, A. Fiore, G. Patriarche, S. Höfling, and A. Forchel
Appl. Phys. Lett. 94, 241113 (2009), DOI: 10.1063/1.3156029

Weak coupling effects in high-Q electrically driven micropillars
C. Kistner, S. Reitzenstein, C. Böckler, R. Debusmann, J. Claudon, L. Grenouillet, S. Höfling, J.-M. Gerard, and A. Forchel
Phys. Status Solidi C 6, 381 (2009), DOI: 10.1002/pssc.200880344

Resonantly probing micropillar cavity modes by photocurrent spectroscopy
C. Kistner, S. Reitzenstein, C. Schneider, S. Höfling, and A. Forchel
Appl. Phys. Lett. 94, 221103 (2009), DOI: 10.1063/1.3147162

Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells
M. Motyka, G. Sęk, J. Misiewicz, A. Bauer, M. Dallner, S. Höfling, and A. Forchel
Appl. Phys. Express 2, 126505 (2009), DOI: 10.1143/APEX.2.126505

Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications
M. Motyka, G. Sęk, K. Ryczko, J. Misiewicz, T. Lehnhardt, S. Höfling, and A. Forchel
Appl. Phys. Lett. 94, 251901 (2009), DOI: 10.1063/1.3157910

Inversion of hysteresis in quantum dot controlled quantum-wire transistor
C. R. Müller, L. Worschech, and A. Forchel
Phys. Rev. B 79 (2009), DOI: 10.1103/PhysRevB.79.205307

Characterization of Three-Terminal Junctions Operated as In-Plane Gated Field-Effect Transistors
C. R. Müller, L. Worschech, S. Höfling, and A. Forchel
IEEE Trans. Electron Devices 56, 306 (2009), DOI: 10.1109/TED.2009.2010571

The role of optical excitation power on the emission spectra of a strongly coupled quantum dot-micropillar system
S. Münch, S. Reitzenstein, P. Franeck, A. Löffler, T. Heindel, S. Höfling, L. Worschech, and A. Forchel
Opt. Express, OE 17, 12821 (2009), DOI: 10.1364/oe.17.012821

Polarization-independent active metamaterial for high-frequency terahertz modulation
O. Paul, C. Imhof, B. Lägel, S. Wolff, J. Heinrich, S. Höfling, A. Forchel, R. Zengerle, R. Beigang, and M. Rahm
Opt. Express, OE 17, 819 (2009), DOI: 10.1364/oe.17.000819

Influence of light on spin diffusion in weak magnetic fields
J.-H. Quast, G. V. Astakhov, W. Ossau, L. W. Molenkamp, J. Heinrich, S. Höfling, and A. Forchel
Phys. Rev. B 79 (2009), DOI: 10.1103/PhysRevB.79.245207

Quantum dot micropillar lasers
S. Reitzenstein, C. Kistner, S. Münch, T. Heindel, C. Schneider, M. Strauß, A. Rahimi-Iman, K. Morgener, S. Höfling, M. Kamp, and A. Forchel
Proc. SPIE, Optoelectronic Materials and Devices IV, 76311J (2009), DOI: 10.1117/12.855654

Single quantum dot controlled gain modulation in high- Q micropillar lasers
S. Reitzenstein, C. Böckler, A. V. Bazhenov, A. Gorbunov, S. Münch, A. Löffler, M. Kamp, V. D. Kulakovskii, and A. Forchel
Phys. Status Solidi B 246, 277 (2009), DOI: 10.1002/pssb.200880358

Oscillatory variations in the Q factors of high quality micropillar cavities
S. Reitzenstein, N. Gregersen, C. Kistner, M. Strauss, C. Schneider, L. Pan, T. R. Nielsen, S. Höfling, J. Mørk, and A. Forchel
Appl. Phys. Lett. 94, 61108 (2009), DOI: 10.1063/1.3081030

Control of the strong light-matter interaction between an elongated In_{0.3}Ga_{0.7}As quantum dot and a micropillar cavity using external magnetic fields
S. Reitzenstein, S. Münch, P. Franeck, A. Rahimi-Iman, A. Löffler, S. Höfling, L. Worschech, and A. Forchel
Phys. Rev. Lett. 103, 127401 (2009), DOI: 10.1103/PhysRevLett.103.127401

Short-Wavelength (760–920 nm) AlGaInAs Quantum Dot Lasers
T. W. Schlereth, C. Schneider, S. Gerhard, S. Höfling, and A. Forchel
IEEE J. Select. Topics Quantum Electron. 15, 792 (2009), DOI: 10.1109/JSTQE.2008.2011493

Single photon emission from a site-controlled quantum dot-micropillar cavity system
C. Schneider, T. Heindel, A. Huggenberger, P. Weinmann, C. Kistner, M. Kamp, S. Reitzenstein, S. Höfling, and A. Forchel
Appl. Phys. Lett. 94, 111111 (2009), DOI: 10.1063/1.3097016

Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration
C. Schneider, A. Huggenberger, T. Sünner, T. Heindel, M. Strauss, S. Göpfert, P. Weinmann, S. Reitzenstein, L. Worschech, M. Kamp, S. Höfling, and A. Forchel
Nanotechnology 20, 434012 (2009), DOI: 10.1088/0957-4484/20/43/434012

Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 µm
G. Sęk, P. Podemski, J. Andrzejewski, J. Misiewicz, S. Hein, S. Höfling, and A. Forchel
Appl. Phys. Express 2, 61102 (2009), DOI: 10.1143/APEX.2.061102

Optically pumped lasing from a single pillar microcavity with InGaAs/GaAs quantum well potential fluctuation quantum dots
G. Sęk, P. Podemski, J. Misiewicz, S. Reitzenstein, J. P. Reithmaier, and A. Forchel
J. Appl. Phys. 105, 53513 (2009), DOI: 10.1063/1.3074364

Exciton and biexciton emission from a single InAs/InP quantum dash
G. Sęk, P. Podemski, A. Musiał, J. Misiewicz, S. Hein, S. Höfling, and A. Forchel
J. Appl. Phys. 105, 86104 (2009), DOI: 10.1063/1.3116551

Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature
D. Spanheimer, C. R. Müller, J. Heinrich, S. Höfling, L. Worschech, and A. Forchel
Appl. Phys. Lett. 95, 103502 (2009), DOI: 10.1063/1.3222941

InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm
M. Strauss, S. Höfling, and A. Forchel
Nanotechnology 20, 505601 (2009), DOI: 10.1088/0957-4484/20/50/505601

Mode-Controlled Tapered Lasers Based on Quantum Dots
P. Weinmann, C. Zimmermann, T. W. Schlereth, C. Schneider, S. Höfling, M. Kamp, and A. Forchel
IEEE J. Select. Topics Quantum Electron. 15, 780 (2009), DOI: 10.1109/JSTQE.2008.2010874

Direct observation of correlations between individual photon emission events of a microcavity laser
J. Wiersig, C. Gies, F. Jahnke, M. Aßmann, T. Berstermann, M. Bayer, C. Kistner, S. Reitzenstein, C. Schneider, S. Höfling, A. Forchel, C. Kruse, J. Kalden, and D. Hommel
Nature 460, 245 (2009), DOI: 10.1038/nature08126

Optically controlled semiconductor spin qubits for quantum information processing
Y. Yamamoto, T. D. Ladd, D. Press, S. Clark, K. Sanaka, C. M. Santori, D. Fattal, K. M. Fu, S. Höfling, S. Reitzenstein, and A. Forchel
Phys. Scr. T137, 14010 (2009), DOI: 10.1088/0031-8949/2009/T137/014010

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Influence of the spontaneous optical emission factor β on the first-order coherence of a semiconductor microcavity laser
S. Ates, C. Gies, S. M. Ulrich, J. Wiersig, S. Reitzenstein, A. Löffler, A. Forchel, F. Jahnke, and P. Michler
Phys. Rev. B 78 (2008), DOI: 10.1103/PhysRevB.78.155319

GaSb-based lasers with two-dimensional photonic crystal mirrors
A. Bauer, M. Müller, T. Lehnhardt, K. Rößner, M. Hümmer, and A. Forchel
Nanotechnology 19, 15203 (2008), DOI: 10.1088/0957-4484/19/01/015203

Discretely tunable single-mode lasers on GaSb using two-dimensional photonic crystal intracavity mirrors
A. Bauer, M. Müller, T. Lehnhardt, K. Rößner, M. Hümmer, H. Hofmann, M. Kamp, S. Höfling, and A. Forchel
Nanotechnology 19, 235202 (2008), DOI: 10.1088/0957-4484/19/23/235202

Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 [micro sign]m
D. Bisping, S. Höfling, D. Pucicki, M. Fischer, and A. Forchel
Electron. Lett. 44, 737 (2008), DOI: 10.1049/el:20081035

Electrically driven high-Q quantum dot-micropillar cavities
C. Böckler, S. Reitzenstein, C. Kistner, R. Debusmann, A. Löffler, T. Kida, S. Höfling, A. Forchel, L. Grenouillet, J. Claudon, and J.-M. Gerard
Appl. Phys. Lett. 92, 91107 (2008), DOI: 10.1063/1.2890166

Direct observation of the coherent spectral hole in the noise spectrum of a saturated InAs/InP quantum dash amplifier operating near 1550 nm
A. Capua, V. Mikhelashvili, G. Eisenstein, J. P. Reithmaier, A. Somers, A. Forchel, M. Calligaro, O. Parillaud, and M. Krakowski
Opt. Express, OE 16, 2141 (2008), DOI: 10.1364/oe.16.002141

Recombination dynamics in wurtzite InP nanowires
S. Crankshaw, S. Reitzenstein, L. C. Chuang, M. Moewe, S. Münch, C. Böckler, A. Forchel, and C. J. Chang-Hasnain
Phys. Rev. B 77 (2008), DOI: 10.1103/PhysRevB.77.235409

Gain Studies on Quantum-Dot Lasers With Temperature-Stable Emission Wavelength
R. Debusmann, T. W. Schlereth, S. Gerhard, W. Kaiser, S. Höfling, and A. Forchel
IEEE J. Quantum Electron. 44, 175 (2008), DOI: 10.1109/JQE.2007.911693

Frequency-Dependent Linewidth Enhancement Factor of Quantum-Dot Lasers
S. Gerhard, C. Schilling, F. Gerschütz, M. Fischer, J. Koeth, I. Krestnikov, A. Kovsh, M. Kamp, S. Höfling, and A. Forchel
IEEE Photon. Technol. Lett. 20, 1736 (2008), DOI: 10.1109/LPT.2008.2004675

1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation
F. Gerschütz, M. Fischer, J. Koeth, I. Krestnikov, A. Kovsh, C. Schilling, W. Kaiser, S. Höfling, and A. Forchel
Opt. Express, OE 16, 5596 (2008), DOI: 10.1364/oe.16.005596

2-$\mu$m Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser
A. Härkönen, J. Rautiainen, L. Orsila, M. Guina, K. Roszner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov
IEEE Photon. Technol. Lett. 20, 1332 (2008), DOI: 10.1109/LPT.2008.926921

Tunable magnetic-field asymmetry of nonlinear mesoscopic transport: Field-effect controlled backscattering in a quantum wire
D. Hartmann, L. Worschech, and A. Forchel
Phys. Rev. B 78 (2008), DOI: 10.1103/PhysRevB.78.113306

Singlemode InAs/InP quantum dash distributed feedback lasers emitting in 1.9 [micro sign]m range
S. Hein, A. Somers, W. Kaiser, S. Höfling, J. P. Reithmaier, and A. Forchel
Electron. Lett. 44, 527 (2008), DOI: 10.1049/el:20080110

Wide wavelength tuning of GaAs∕AlxGa1−xAs bound-to-continuum quantum cascade lasers by aluminum content control
J. Heinrich, R. Langhans, M. S. Vitiello, G. Scamarcio, D. Indjin, C. A. Evans, Z. Ikonić, P. Harrison, S. Höfling, and A. Forchel
Appl. Phys. Lett. 92, 141111 (2008), DOI: 10.1063/1.2907503

Decay dynamics of quantum dots influenced by the local density of optical states of two-dimensional photonic crystal membranes
B. Julsgaard, J. Johansen, S. Stobbe, T. Stolberg-Rohr, T. Sünner, M. Kamp, A. Forchel, and P. Lodahl
Appl. Phys. Lett. 93, 94102 (2008), DOI: 10.1063/1.2977605

Demonstration of strong coupling via electro-optical tuning in high-quality QD-micropillar systems
C. Kistner, T. Heindel, C. Schneider, A. Rahimi-Iman, S. Reitzenstein, S. Höfling, and A. Forchel
Opt. Express, OE 16, 15006 (2008), DOI: 10.1364/oe.16.015006

2 watt 2 μm Tm/Ho fiber laser system passively Q-switched by antimonide semiconductor saturable absorber
S. Kivistö, T. Hakulinen, M. Guina, K. Rößner, A. Forchel, and O. G. Okhotnikov
Proc. SPIE, Solid State Lasers and Amplifiers III, 69980Q (2008), DOI: 10.1117/12.780487

Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb single quantum wells of various widths
R. Kudrawiec, M. Motyka, J. Misiewicz, M. Hümmer, K. Rößner, T. Lehnhardt, M. Müller, and A. Forchel
Appl. Phys. Lett. 92, 41910 (2008), DOI: 10.1063/1.2840161

Elimination of cross-talk in waveguide intersections of triangular lattice photonic crystals
S.-H. Kwon, M. Kamp, A. Forchel, M.-K. Seo, and Y.-H. Lee
Opt. Express, OE 16, 11399 (2008), DOI: 10.1364/oe.16.011399

Optimization of photonic crystal cavity for chemical sensing
S.-H. Kwon, T. Sünner, M. Kamp, and A. Forchel
Opt. Express, OE 16, 11709 (2008), DOI: 10.1364/oe.16.011709

Ultrahigh-Q photonic crystal cavity created by modulating air hole radius of a waveguide
S.-H. Kwon, T. Sünner, M. Kamp, and A. Forchel
Opt. Express, OE 16, 4605 (2008), DOI: 10.1364/oe.16.004605

Selective etching of independent contacts in a double quantum-well structure: Quantum-gate transistor
S. Lang, L. Worschech, M. Emmerling, M. Strauß, S. Höfling, and A. Forchel
Appl. Phys. Lett. 92, 62101 (2008), DOI: 10.1063/1.2841662

Continuous wave single mode operation of GaInAsSb∕GaSb quantum well lasers emitting beyond 3μm
T. Lehnhardt, M. Hümmer, K. Rößner, M. Müller, S. Höfling, and A. Forchel
Appl. Phys. Lett. 92, 183508 (2008), DOI: 10.1063/1.2926657

Experimental realization of highly efficient broadband coupling of single quantum dots to a photonic crystal waveguide
T. Lund-Hansen, S. Stobbe, B. Julsgaard, H. Thyrrestrup, T. Sünner, M. Kamp, A. Forchel, and P. Lodahl
Phys. Rev. Lett. 101, 113903 (2008), DOI: 10.1103/PhysRevLett.101.113903

Negative magnetopolarization in thermally annealed self-assembled quantum dots
E. Margapoti, L. Worschech, S. Mahapatra, K. Brunner, A. Forchel, F. M. Alves, V. Lopez-Richard, G. E. Marques, and C. Bougerol
Phys. Rev. B 77 (2008), DOI: 10.1103/PhysRevB.77.073308

High-brightness quantum well and quantum dot tapered lasers
N. Michel, M. Krakowski, I. Hassiaoui, M. Calligaro, M. Lecomte, O. Parillaud, P. Weinmann, C. Zimmermann, W. Kaiser, M. Kamp, A. Forchel, E.-M. Pavelescu, J. P. Reithmaier, B. Sumpf, G. Erbert, M. Kelemen, R. Ostendorf, J.-M. García-Tijero, H. Odriozola, and I. Esquivias
Proc. SPIE, Novel In-Plane Semiconductor Lasers VII, 690918 (2008), DOI: 10.1117/12.787115

Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence
M. Motyka, R. Kudrawiec, J. Misiewicz, M. Hümmer, K. Rößner, T. Lehnhardt, M. Müller, and A. Forchel
J. Appl. Phys. 103, 113514 (2008), DOI: 10.1063/1.2936852

Room temperature memory operation of a single InAs quantum dot layer in a GaAs∕AlGaAs heterostructure
C. R. Müller, L. Worschech, J. Heinrich, S. Höfling, and A. Forchel
Appl. Phys. Lett. 93, 63502 (2008), DOI: 10.1063/1.2967880

Highly integrated coupled cavity photonic crystal laser with on-chip power control on the AlGaIn/AsSb material system
M. Müller, A. Bauer, T. Lehnhardt, and A. Forchel
Nanotechnology 19, 265203 (2008), DOI: 10.1088/0957-4484/19/26/265203

Tunable lasers on GaSb using the concept of binary superimposed gratings
M. Müller, T. Lehnhardt, K. Rößner, and A. Forchel
Appl. Phys. Lett. 93, 81117 (2008), DOI: 10.1063/1.2977461

High-Power Frequency Stabilized GaSb DBR Tapered Laser
M. Müller, A. Bauer, T. Lehnhardt, M. Kamp, and A. Forchel
IEEE Photon. Technol. Lett. 20, 2162 (2008), DOI: 10.1109/LPT.2008.2007303

Widely Tunable Photonic Crystal Coupled Cavity Lasers on GaSb
M. Müller, A. Bauer, T. Lehnhardt, and A. Forchel
IEEE Photon. Technol. Lett. 20, 1100 (2008), DOI: 10.1109/LPT.2008.924312

Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55μm
P. Podemski, G. Sęk, K. Ryczko, J. Misiewicz, S. Hein, S. Höfling, A. Forchel, and G. Patriarche
Appl. Phys. Lett. 93, 171910 (2008), DOI: 10.1063/1.3009557

Single quantum dot controlled lasing effects in high-Q micropillar cavities
S. Reitzenstein, C. Böckler, A. V. Bazhenov, A. Gorbunov, A. Löffler, M. Kamp, V. D. Kulakovskii, and A. Forchel
Opt. Express, OE 16, 4848 (2008), DOI: 10.1364/oe.16.004848

Low threshold electrically pumped quantum dot-micropillar lasers
S. Reitzenstein, T. Heindel, C. Kistner, A. Rahimi-Iman, C. Schneider, S. Höfling, and A. Forchel
Appl. Phys. Lett. 93, 61104 (2008), DOI: 10.1063/1.2969397

Glass supported ZnSe microring strongly coupled to a single CdSe quantum dot
J. Renner, L. Worschech, A. Forchel, S. Mahapatra, and K. Brunner
Appl. Phys. Lett. 93, 151109 (2008), DOI: 10.1063/1.2998403

Tailoring of morphology and emission wavelength of AlGaInAs quantum dots
T. W. Schlereth, C. Schneider, S. Höfling, and A. Forchel
Nanotechnology 19, 45601 (2008), DOI: 10.1088/0957-4484/19/04/045601

Lithographic alignment to site-controlled quantum dots for device integration
C. Schneider, M. Strauß, T. Sünner, A. Huggenberger, D. Wiener, S. Reitzenstein, M. Kamp, S. Höfling, and A. Forchel
Appl. Phys. Lett. 92, 183101 (2008), DOI: 10.1063/1.2920189

Single mode emitting ridge waveguide quantum cascade lasers coupled to an active ring resonator filter
J. Semmel, W. Kaiser, H. Hofmann, S. Höfling, and A. Forchel
Appl. Phys. Lett. 93, 211106 (2008), DOI: 10.1063/1.3039057

Gate leakage induced gating in low-dimensional conductors
D. Spanheimer, L. Worschech, C. R. Müller, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 40, 2150 (2008), DOI: 10.1016/j.physe.2007.10.035

Photonic crystal cavity based gas sensor
T. Sünner, T. Stichel, S.-H. Kwon, T. W. Schlereth, S. Höfling, M. Kamp, and A. Forchel
Appl. Phys. Lett. 92, 261112 (2008), DOI: 10.1063/1.2955523

Scalable fabrication of optical resonators with embedded site-controlled quantum dots
T. Sünner, C. Schneider, M. Strauss, A. Huggenberger, D. Wiener, S. Höfling, M. Kamp, and A. Forchel
Opt. Lett., OL 33, 1759 (2008), DOI: 10.1364/ol.33.001759

Observation of Bogoliubov excitations in exciton-polariton condensates
S. Utsunomiya, L. Tian, G. Roumpos, C. W. Lai, N. Kumada, T. Fujisawa, M. Kuwata-Gonokami, A. Löffler, S. Höfling, A. Forchel, and Y. Yamamoto
Nat. Phys. 4, 700 (2008), DOI: 10.1038/nphys1034

Dynamic-gate operation in nanoelectronic amplifiers due to reduced screening
L. Worschech, D. Hartmann, and A. Forchel
Appl. Phys. Lett. 93, 203105 (2008), DOI: 10.1063/1.3035852

Singlemode emission at 2 [micro sign]m wavelength with InP based quantum dash DFB lasers
W. Zeller, M. Legge, A. Somers, W. Kaiser, J. Koeth, and A. Forchel
Electron. Lett. 44, 354 (2008), DOI: 10.1049/el:20080088

Nach oben

Coherence properties of high-β elliptical semiconductor micropillar lasers
S. Ates, S. M. Ulrich, P. Michler, S. Reitzenstein, A. Löffler, and A. Forchel
Appl. Phys. Lett. 90, 161111 (2007), DOI: 10.1063/1.2724908

Modal Analysis of Large Spot Size, Low Output Beam Divergence Quantum-Dot Lasers
B. Corbett, P. Lambkin, J. O'Callaghan, S. Deubert, W. Kaiser, J. P. Reithmaier, and A. Forchel
IEEE Photon. Technol. Lett. 19, 916 (2007), DOI: 10.1109/LPT.2007.897569

High-Temperature Continuous-Wave Operation of GaInAsN–GaAs Quantum-Dot Laser Diodes Beyond 1.3 $\mu$m
M. Fischer, D. Bisping, B. Marquardt, and A. Forchel
IEEE Photon. Technol. Lett. 19, 1030 (2007), DOI: 10.1109/LPT.2007.898769

Strong coupling of single quantum dots to micropillars
S. Götzinger, D. Press, S. Reitzenstein, K. Hofmann, A. Löffler, M. Kamp, A. Forchel, and Y. Yamamoto
Proc. SPIE, Photonic Materials, Devices, and Applications II, 65932E (2007), DOI: 10.1117/12.726311

Tunable self-seeded semiconductor disk laser operating at 2 [micro sign]m
A. Härkönen, M. Guina, K. Rößner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, J. Koeth, and O. G. Okhotnikov
Electron. Lett. 43, 457 (2007), DOI: 10.1049/el:20070591

Shunt quantum capacitance induced source switching in an electron Y-branch switch
D. Hartmann, L. Worschech, S. Lang, and A. Forchel
Phys. Rev. B 75 (2007), DOI: 10.1103/PhysRevB.75.121302

Dynamic properties of 1.5 [micro sign]m quantum dash lasers on (100) InP
S. Hein, V. von Hinten, W. Kaiser, S. Höfling, and A. Forchel
Electron. Lett. 43, 1093 (2007), DOI: 10.1049/el:20072292

Quantum Cascade Microlasers With Two-Dimensional Photonic Crystal Reflectors
J. Heinrich, R. Langhans, J. Seufert, S. Höfling, and A. Forchel
IEEE Photon. Technol. Lett. 19, 1937 (2007), DOI: 10.1109/LPT.2007.908774

Spectral and spatial single mode emission from a photonic crystal distributed feedback laser
H. Hofmann, H. Scherer, S. Deubert, M. Kamp, and A. Forchel
Appl. Phys. Lett. 90, 121135 (2007), DOI: 10.1063/1.2716972

Singlemode tapered quantum dot laser diodes with monolithically integrated feedback gratings
W. Kaiser, S. Deubert, J. P. Reithmaier, and A. Forchel
Electron. Lett. 43, 926 (2007), DOI: 10.1049/el:20071651

Theoretical and experimental investigations on temperature induced wavelength shift of tapered laser diodes based on InGaAs∕GaAs quantum dots
W. Kaiser, J. P. Reithmaier, A. Forchel, H. Odriozola, and I. Esquivias
Appl. Phys. Lett. 91, 51126 (2007), DOI: 10.1063/1.2767977

Nanophotonic integrated lasers
M. Kamp, H. Scherer, K. Janiak, H. Heidrich, R. Brenot, G.-H. Duan, H. Benisty, and A. Forchel
Proc. SPIE, Integrated Optics: Devices, Materials, and Technologies XI, 64750Z (2007), DOI: 10.1117/12.704965

Interference effects in the emission spectra of quantum dots in high-quality cavities
L. V. Keldysh, V. D. Kulakovskii, S. Reitzenstein, M. N. Makhonin, and A. Forchel
JETP Lett. 84, 494 (2007), DOI: 10.1134/S0021364006210053

Contactless electroreflectance of InAs∕In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate: Analysis of the wetting layer transition
R. Kudrawiec, M. Motyka, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, A. Forchel, A. Sauerwald, T. Kümmell, and G. Bacher
J. Appl. Phys. 101, 13507 (2007), DOI: 10.1063/1.2405233

Annealing induced inversion of quantum dot fine-structure splitting
E. Margapoti, L. Worschech, A. Forchel, A. Tribu, T. Aichele, R. André, and K. Kheng
Appl. Phys. Lett. 90, 181927 (2007), DOI: 10.1063/1.2737131

Contactless electroreflectance investigation of energy levels in a 1.3μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs∕GaAs quantum wells
M. Motyka, R. Kudrawiec, G. Sęk, J. Misiewicz, D. Bisping, B. Marquardt, A. Forchel, and M. Fischer
Appl. Phys. Lett. 90, 221112 (2007), DOI: 10.1063/1.2743382

Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells
M. Motyka, R. Kudrawiec, G. Sęk, J. Misiewicz, D. Bisping, B. Marquardt, A. Forchel, and M. Fischer
J. Appl. Phys. 101, 113539 (2007), DOI: 10.1063/1.2745122

Near-field imaging and frequency tuning of a high-Q photonic crystal membrane microcavity
S. Mujumdar, A. F. Koenderink, T. Sünner, B. C. Buchler, M. Kamp, A. Forchel, and V. Sandoghdar
Opt. Express, OE 15, 17214 (2007), DOI: 10.1364/OE.15.017214

Room temperature memory operation of electron Y-branch switch with embedded quantum dots
C. R. Müller, L. Worschech, and A. Forchel
Electron. Lett. 43, 1392 (2007), DOI: 10.1049/el:20072341

Monolithically Integrated Logic nor Gate Based on GaAs/AlGaAs Three-Terminal Junctions
C. R. Müller, L. Worschech, P. Hopfner, S. Höfling, and A. Forchel
IEEE Electron Device Lett. 28, 859 (2007), DOI: 10.1109/LED.2007.906108

Long wavelength broad area lasers with tilted contacts
M. Müller, A. Bauer, T. Lehnhardt, K. Rößner, M. Hümmer, and A. Forchel
Electron. Lett. 43 (2007), DOI: 10.1049/el:20072459

One dimensional and two dimensional photonic crystal GaInSb∕AlGaAsSb microlasers
M. Müller, A. Bauer, T. Lehnhardt, K. Rößner, M. Hümmer, and A. Forchel
Appl. Phys. Lett. 91, 201116 (2007), DOI: 10.1063/1.2805031

Highly integrated widely tunable single mode laser with on-chip power control
M. Müller, T. Lehnhardt, A. Bauer, K. Rößner, M. Hümmer, and A. Forchel
Nanotechnology 18, 315203 (2007), DOI: 10.1088/0957-4484/18/31/315203

High performance short period superlattice digital alloy InSb/Ga(x)In(1-x)Sb laser emitting at 1.9 µm
M. Müller, T. Lehnhardt, K. Rößner, M. Hümmer, R. Werner, and A. Forchel
Nanotechnology 18, 265302 (2007), DOI: 10.1088/0957-4484/18/26/265302

Widely Tunable Coupled Cavity Lasers at 1.9 $\mu$m on GaSb
M. Müller, H. Scherer, T. Lehnhardt, K. Rößner, M. Hümmer, R. Werner, and A. Forchel
IEEE Photon. Technol. Lett. 19, 592 (2007), DOI: 10.1109/LPT.2007.894290

Tapered quantum cascade lasers
L. Nähle, J. Semmel, W. Kaiser, S. Höfling, and A. Forchel
Appl. Phys. Lett. 91, 181122 (2007), DOI: 10.1063/1.2805628

High Q whispering gallery modes in GaAs/AlAs pillar microcavities
Y.-R. Nowicki-Bringuier, J. Claudon, C. Böckler, S. Reitzenstein, M. Kamp, A. Morand, A. Forchel, and J.-M. Gerard
Opt. Express, OE 15, 17291 (2007), DOI: 10.1364/oe.15.017291

Influence of geometric disorder on the band structure of a photonic crystal: Experiment and theory
I. V. Ponomarev, M. Schwab, G. Dasbach, M. Bayer, T. L. Reinecke, J. P. Reithmaier, and A. Forchel
Phys. Rev. B 75 (2007), DOI: 10.1103/PhysRevB.75.205434

Photon antibunching from a single quantum-dot-microcavity system in the strong coupling regime
D. Press, S. Götzinger, S. Reitzenstein, C. Hofmann, A. Löffler, M. Kamp, A. Forchel, and Y. Yamamoto
Phys. Rev. Lett. 98, 117402 (2007), DOI: 10.1103/PhysRevLett.98.117402

AlAs∕GaAs micropillar cavities with quality factors exceeding 150.000
S. Reitzenstein, C. Hofmann, A. Gorbunov, M. Strauß, S.-H. Kwon, C. Schneider, A. Löffler, S. Höfling, M. Kamp, and A. Forchel
Appl. Phys. Lett. 90, 251109 (2007), DOI: 10.1063/1.2749862

Time resolved microphotoluminescence studies of single InP nanowires grown by low pressure metal organic chemical vapor deposition
S. Reitzenstein, S. Münch, C. Hofmann, A. Forchel, S. Crankshaw, L. C. Chuang, M. Moewe, and C. J. Chang-Hasnain
Appl. Phys. Lett. 91, 91103 (2007), DOI: 10.1063/1.2776358

Superradiance of quantum dots
M. Scheibner, T. Schmidt, L. Worschech, A. Forchel, G. Bacher, T. Passow, and D. Hommel
Nat. Phys. 3, 106 (2007), DOI: 10.1038/nphys494

Low threshold, high gain AlGaInAs quantum dot lasers
T. W. Schlereth, C. Schneider, W. Kaiser, S. Höfling, and A. Forchel
Appl. Phys. Lett. 90, 221113 (2007), DOI: 10.1063/1.2745200

Efficient energy transfer in InAs quantum dash based tunnel-injection structures at low temperatures
G. Sęk, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, S. Höfling, J. P. Reithmaier, and A. Forchel
Proc. SPIE, Quantum Dots, Particles, and Nanoclusters IV, 64810F (2007), DOI: 10.1117/12.713616

Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55μm emission
G. Sęk, P. Poloczek, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, S. Höfling, and A. Forchel
Appl. Phys. Lett. 90, 81915 (2007), DOI: 10.1063/1.2472543

Edge emitting quantum cascade microlasers on InP with deeply etched one-dimensional photonic crystals
J. Semmel, L. Nähle, S. Höfling, and A. Forchel
Appl. Phys. Lett. 91, 71104 (2007), DOI: 10.1063/1.2771054

Space charge induced gating by a leaky gate
D. Spanheimer, L. Worschech, C. R. Müller, and A. Forchel
Appl. Phys. Lett. 90, 232101 (2007), DOI: 10.1063/1.2746065

Group delay measurements on photonic crystal resonators
T. Sünner, M. Gellner, A. Löffler, M. Kamp, and A. Forchel
Appl. Phys. Lett. 90, 151117 (2007), DOI: 10.1063/1.2722223

Dispersive properties of photonic crystal waveguide resonators
T. Sünner, M. Gellner, M. Scholz, A. Löffler, M. Kamp, and A. Forchel
Phys. Status Solidi A 204, 3727 (2007), DOI: 10.1002/pssa.200776419

Fine-tuning of GaAs photonic crystal cavities by digital etching
T. Sünner, R. Herrmann, A. Löffler, M. Kamp, and A. Forchel
Microelectron. Eng. 84, 1405 (2007), DOI: 10.1016/j.mee.2007.01.064

Photon statistics of semiconductor microcavity lasers
S. M. Ulrich, C. Gies, S. Ates, J. Wiersig, S. Reitzenstein, C. Hofmann, A. Löffler, A. Forchel, F. Jahnke, and P. Michler
Phys. Rev. Lett. 98, 43906 (2007), DOI: 10.1103/PhysRevLett.98.043906

Detection of charge states in nanowire quantum dots using a quantum point contact
D. Wallin, A. Fuhrer, L. E. Fröberg, L. Samuelson, H. Q. Xu, S. Höfling, and A. Forchel
Appl. Phys. Lett. 90, 172112 (2007), DOI: 10.1063/1.2732829

Disorder-induced losses in planar photonic crystals
R. Ferrini, D. Leuenberger, R. Houdré, H. Benisty, M. Kamp, and A. Forchel
Opt. Lett., OL 31, 1426 (2006), DOI: 10.1364/ol.31.001426

1-W antimonide-based vertical external cavity surface emitting laser operating at 2-microm
A. Härkönen, M. Guina, O. G. Okhotnikov, K. Rößner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, and M. Fischer
Opt. Express, OE 14, 6479 (2006), DOI: 10.1364/OE.14.006479

Self-gating in an electron Y-branch switch at room temperature
D. Hartmann, L. Worschech, S. Höfling, A. Forchel, and J. P. Reithmaier
Appl. Phys. Lett. 89, 122109 (2006), DOI: 10.1063/1.2357006

Y-branch switch frequency bisection
D. Hartmann, L. Worschech, P. Kowalzik, and A. Forchel
Electron. Lett. 42, 1005 (2006), DOI: 10.1049/el:20061930

Ultrahigh-quality photonic crystal cavity in GaAs
R. Herrmann, T. Sünner, T. Hein, A. Löffler, M. Kamp, and A. Forchel
Opt. Lett., OL 31, 1229 (2006), DOI: 10.1364/OL.31.001229

Photonic crystal quantum cascade lasers with improved threshold characteristics operating at room temperature
S. Höfling, J. Heinrich, H. Hofmann, M. Kamp, J. P. Reithmaier, A. Forchel, and J. Seufert
Appl. Phys. Lett. 89, 191113 (2006), DOI: 10.1063/1.2387115

Widely tunable single-mode quantum cascade lasers with two monolithically coupled Fabry-Pérot cavities
S. Höfling, J. Heinrich, J. P. Reithmaier, A. Forchel, J. Seufert, M. Fischer, and J. Koeth
Appl. Phys. Lett. 89, 241126 (2006), DOI: 10.1063/1.2404933

Dependence of saturation effects on electron confinement and injector doping in GaAs∕Al0.45Ga0.55As quantum-cascade lasers
S. Höfling, V. D. Jovanović, D. Indjin, J. P. Reithmaier, A. Forchel, Z. Ikonić, N. Vukmirović, P. Harrison, A. Mirčetić, and V. Milanović
Appl. Phys. Lett. 88, 251109 (2006), DOI: 10.1063/1.2214128

Mode switching and singlemode tuning in two-segment distributed feedback quantum cascade lasers
S. Höfling, J. Seufert, M. Fischer, B. Rösener, J. Koeth, J. P. Reithmaier, and A. Forchel
Electron. Lett. 42, 220 (2006), DOI: 10.1049/el:20063715

Long wavelength GaInAsSb-AlGaAsSb distributed-feedback lasers emitting at 2.84 [micro sign]m
M. Hümmer, K. Rößner, T. Lehnhardt, M. Müller, A. Forchel, R. Werner, M. Fischer, and J. Koeth
Electron. Lett. 42, 583 (2006), DOI: 10.1049/el:20060528

Influence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasers
V. D. Jovanović, S. Höfling, D. Indjin, N. Vukmirović, Z. Ikonić, P. Harrison, J. P. Reithmaier, and A. Forchel
J. Appl. Phys. 99, 103106 (2006), DOI: 10.1063/1.2194312

Recent advances in nanophotonics—From physics to devices
M. Kamp, J. P. Reithmaier, S. Reitzenstein, and A. Forchel
Curr. Appl. Phys. 6, e166-e171 (2006), DOI: 10.1016/j.cap.2006.01.032

Photonic crystal waveguide-based dispersion compensators
M. Kamp, J. Zimmermann, S. Anand, R. März, and A. Forchel
Proc. SPIE, Integrated Optics: Devices, Materials, and Technologies X, 61230Y (2006), DOI: 10.1117/12.646172

Structural and optical analysis of size-controlled InAs quantum dashes
T. Kümmell, A. Sauerwald, A. Somers, A. Löffler, J. P. Reithmaier, A. Forchel, and G. Bacher
Physica E Low Dimens. Syst. Nanostruct. 32, 108 (2006), DOI: 10.1016/j.physe.2005.12.020

Cascaded quantum wires and integrated designs for complex logic functions: nanoelectronic full adder
B. Lau, D. Hartmann, L. Worschech, and A. Forchel
IEEE Trans. Electron Devices 53, 1107 (2006), DOI: 10.1109/TED.2006.871878

Influence of the strain on the formation of GaInAs/GaAs quantum structures
A. Löffler, J. P. Reithmaier, A. Forchel, A. Sauerwald, D. Peskes, T. Kümmell, and G. Bacher
J. Cryst. Growth 286, 6 (2006), DOI: 10.1016/j.jcrysgro.2005.09.009

Formation mechanism and properties of CdSe quantum dots on ZnSe by low temperature epitaxy and in situ annealing
S. Mahapatra, T. Kiessling, E. Margapoti, G. V. Astakhov, W. Ossau, L. Worschech, A. Forchel, and K. Brunner
Appl. Phys. Lett. 89, 43102 (2006), DOI: 10.1063/1.2234279

Enhanced Zn–Cd interdiffusion and biexciton formation in self-assembled CdZnSe quantum dots in thermally annealed small mesas
E. Margapoti, L. Worschech, A. Forchel, T. Slobodskyy, and L. W. Molenkamp
J. Appl. Phys. 100, 113111 (2006), DOI: 10.1063/1.2390547

GaInAsN/GaAs quantum dot laser diodes operating in 1.36 [micro sign]m wavelength range
B. Marquardt, D. Bisping, A. Forchel, and M. Fischer
Electron. Lett. 42, 806 (2006), DOI: 10.1049/el:20060944

Magnetooptical investigations of single self assembled In0.3Ga0.7As quantum dots
T. Mensing, S. Reitzenstein, A. Löffler, J. P. Reithmaier, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 32, 131 (2006), DOI: 10.1016/j.physe.2005.12.024

Memory inhibition in quantum-wire transistors controlled by quantum dots
C. R. Müller, L. Worschech, and A. Forchel
Phys. Status Solidi C 3, 3794 (2006), DOI: 10.1002/pssc.200671608

Self-gating controlled pronounced threshold hysteresis in electron Y-branch switch with quantum dots
C. R. Müller, L. Worschech, and A. Forchel
Electron. Lett. 42, 603 (2006), DOI: 10.1049/el:20060312

Bias Voltage Controlled Memory Effect in In-Plane Quantum-Wire Transistors With Embedded Quantum Dots
C. R. Müller, L. Worschech, A. Schliemann, and A. Forchel
IEEE Electron Device Lett. 27, 955 (2006), DOI: 10.1109/LED.2006.886325

Current and Voltage gain in a monolithic GaAs/AlGaAs TTJ at room temperature
C. R. Müller, L. Worschech, D. Spanheimer, and A. Forchel
IEEE Electron Device Lett. 27, 208 (2006), DOI: 10.1109/LED.2006.870415

On the tunnel injection of excitons and free carriers from In0.53Ga0.47As∕In0.53Ga0.23Al0.24As quantum well to InAs∕In0.53Ga0.23Al0.24As quantum dashes
P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 89, 61902 (2006), DOI: 10.1063/1.2243889

Thermal quenching of photoluminescence from InAs∕In0.53Ga0.23Al0.24As∕InP quantum dashes with different sizes
P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 89, 151902 (2006), DOI: 10.1063/1.2358312

Optical properties of low-strained InxGa1−xAs∕GaAs quantum dot structures at the two-dimensional–three-dimensional growth transition
P. Poloczek, G. Sęk, J. Misiewicz, A. Löffler, J. P. Reithmaier, and A. Forchel
J. Appl. Phys. 100, 13503 (2006), DOI: 10.1063/1.2208296

Nanostructured semiconductors for optoelectronic applications
J. P. Reithmaier, S. Deubert, A. Somers, W. Kaiser, S. Höfling, A. Löffler, S. Reitzenstein, G. Sęk, C. Hofmann, M. Kamp, and A. Forchel
Proc. SPIE, Quantum Sensing and Nanophotonic Devices III, 61270H (2006), DOI: 10.1117/12.643137

Lasing in high-Q quantum-dot micropillar cavities
S. Reitzenstein, A. V. Bazhenov, A. Gorbunov, C. Hofmann, S. Münch, A. Löffler, M. Kamp, J. P. Reithmaier, V. D. Kulakovskii, and A. Forchel
Appl. Phys. Lett. 89, 51107 (2006), DOI: 10.1063/1.2266231

Strong and weak coupling of single quantum dot excitons in pillar microcavities
S. Reitzenstein, C. Hofmann, A. Löffler, A. Kubanek, J. P. Reithmaier, M. Kamp, V. D. Kulakovskii, L. V. Keldysh, T. L. Reinecke, and A. Forchel
Phys. Status Solidi B 243, 2224 (2006), DOI: 10.1002/pssb.200668012

Coherent photonic coupling of semiconductor quantum dots
S. Reitzenstein, A. Löffler, C. Hofmann, A. Kubanek, M. Kamp, J. P. Reithmaier, A. Forchel, V. D. Kulakovskii, L. V. Keldysh, I. V. Ponomarev, and T. L. Reinecke
Opt. Lett., OL 31, 1738 (2006), DOI: 10.1364/OL.31.001738

Strong coupling in a single quantum dot semiconductor microcavity system
S. Reitzenstein, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, J. P. Reithmaier, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel
Proc. SPIE, Physics and Simulation of Optoelectronic Devices XIV, 61151M (2006), DOI: 10.1117/12.661393

CdSe quantum dot microdisk laser
J. Renner, L. Worschech, A. Forchel, S. Mahapatra, and K. Brunner
Appl. Phys. Lett. 89, 231104 (2006), DOI: 10.1063/1.2402263

Whispering gallery modes in high quality ZnSe∕ZnMgSSe microdisks with CdSe quantum dots studied at room temperature
J. Renner, L. Worschech, A. Forchel, S. Mahapatra, and K. Brunner
Appl. Phys. Lett. 89, 91105 (2006), DOI: 10.1063/1.2345236

Continuous-wave operation of GaInAsSb-GaSb type-II ridge waveguide lasers emitting at 2.8 /spl mu/m
K. Rößner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, M. Fischer, and J. Koeth
IEEE Photon. Technol. Lett. 18, 1424 (2006), DOI: 10.1109/LPT.2006.877232

Photoreflectance-probed excited states in InAs∕InGaAlAs quantum dashes grown on InP substrate
W. Rudno-Rudziński, R. Kudrawiec, P. Podemski, G. Sęk, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 89, 31908 (2006), DOI: 10.1063/1.2226503

Photoreflectance investigation of InAs quantum dashes embedded in In0.53Ga0.47As∕In0.53Ga0.23Al0.24As quantum well grown on InP substrate
W. Rudno-Rudziński, R. Kudrawiec, G. Sęk, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 88, 141915 (2006), DOI: 10.1063/1.2187496

Coherent dynamics of locally interacting spins in self-assembled Cd1−xMnxSe∕ZnSe quantum dots
M. Scheibner, T. A. Kennedy, L. Worschech, A. Forchel, G. Bacher, T. Slobodskyy, G. Schmidt, and L. W. Molenkamp
Phys. Rev. B 73 (2006), DOI: 10.1103/PhysRevB.73.081308

Sign reversal and light controlled tuning of circular polarization in semimagnetic CdMnSe quantum dots
T. Schmidt, M. Scheibner, L. Worschech, A. Forchel, T. Slobodskyy, and L. W. Molenkamp
J. Appl. Phys. 100, 123109 (2006), DOI: 10.1063/1.2399895

Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors
C. Schüller, S. Höfling, A. Forchel, C. Etrich, R. Iliew, F. Lederer, T. Pertsch, and J. P. Reithmaier
Electron. Lett. 42, 1280 (2006), DOI: 10.1049/el:20062195

Investigation of strong coupling between single quantum dot excitons and single photons in pillar microcavities
G. Sęk, C. Hofmann, J. P. Reithmaier, A. Löffler, S. Reitzenstein, M. Kamp, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 32, 471 (2006), DOI: 10.1016/j.physe.2005.12.089

Photoreflectance determination of the wetting layer thickness in the InxGa1−xAs∕GaAs quantum dot system for a broad indium content range of 0.3–1
G. Sęk, P. Poloczek, K. Ryczko, J. Misiewicz, A. Löffler, J. P. Reithmaier, and A. Forchel
J. Appl. Phys. 100, 103529 (2006), DOI: 10.1063/1.2364604

Optical gain properties of InAs∕InAlGaAs∕InP quantum dash structures with a spectral gain bandwidth of more than 300nm
A. Somers, W. Kaiser, J. P. Reithmaier, A. Forchel, M. Gioaninni, and I. Montrosset
Appl. Phys. Lett. 89, 61107 (2006), DOI: 10.1063/1.2266994

Spin–spin interaction in magnetic semiconductor quantum dots
G. Bacher, H. Schömig, M. Scheibner, A. Forchel, A. A. Maksimov, A. V. Chernenko, P. S. Dorozhkin, V. D. Kulakovskii, T. Kennedy, and T. L. Reinecke
Physica E Low Dimens. Syst. Nanostruct. 26, 37 (2005), DOI: 10.1016/j.physe.2004.08.019

Microwave detection at 110 Ghz by nanowires with broken symmetry
C. Balocco, A. M. Song, M. Aberg, A. Forchel, T. González, J. Mateos, I. Maximov, M. Missous, A. A. Rezazadeh, J. Saijets, L. Samuelson, D. Wallin, K. Williams, L. Worschech, and H. Q. Xu
Nano Lett. 5, 1423 (2005), DOI: 10.1021/nl050779g

Correlated photon pairs from single (In,Ga)As∕GaAs quantum dots in pillar microcavities
M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, and A. Forchel
J. Appl. Phys. 97, 23101 (2005), DOI: 10.1063/1.1809251

Polarization inversion via parametric scattering in quasi-one-dimensional microcavities
G. Dasbach, C. Diederichs, J. Tignon, C. Ciuti, P. Roussignol, C. Delalande, M. Bayer, and A. Forchel
Phys. Rev. B 71 (2005), DOI: 10.1103/PhysRevB.71.161308

High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources
S. Deubert, R. Debusmann, J. P. Reithmaier, and A. Forchel
Electron. Lett. 41, 1125 (2005), DOI: 10.1049/el:20052675

InP-based quantum dash lasers for wide gain bandwidth applications
S. Deubert, A. Somers, W. Kaiser, R. Schwertberger, J. P. Reithmaier, and A. Forchel
J. Cryst. Growth 278, 346 (2005), DOI: 10.1016/j.jcrysgro.2005.01.041

System performance of a modern hollow-core optical fiber coupled to a quantum cascade laser: transmission efficiency and relative intensity noise
T. Gensty, J. von Staden, W. Elsäßer, S. Höfling, J. P. Reithmaier, and A. Forchel
Proc. SPIE, Lasers and Applications, 595804 (2005), DOI: 10.1117/12.622264

Gain and noise saturation of wide-band InAs-InP quantum dash optical amplifiers: model and experiments
D. Hadass, A. Bilenca, R. Alizon, H. Dery, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, A. Somers, J. P. Reithmaier, A. Forchel, M. Calligaro, S. Bansropun, and M. Krakowski
IEEE J. Select. Topics Quantum Electron. 11, 1015 (2005), DOI: 10.1109/JSTQE.2005.853740

Time-resolved chirp in an InAs∕InP quantum-dash optical amplifier operating with 10Gbit∕s data
D. Hadass, V. Mikhelashvili, G. Eisenstein, A. Somers, S. Deubert, W. Kaiser, J. P. Reithmaier, A. Forchel, D. Finzi, and Y. Maimon
Appl. Phys. Lett. 87, 21104 (2005), DOI: 10.1063/1.1994947

Static memory element based on electron Y-branch switch
D. Hartmann, S. Reitzenstein, L. Worschech, and A. Forchel
Electron. Lett. 41, 303 (2005), DOI: 10.1049/el:20058059

Inverted and non-inverted hysteretic switching in GaAs∕AlGaAs-based electron Y-branch switches
D. Hartmann, L. Worschech, S. Lang, and A. Forchel
Electron. Lett. 41, 1083 (2005), DOI: 10.1049/el:20052508

Reduction of the threshold current density of GaAs/AlGaAs quantum cascade lasers by optimized injector doping and growth conditions
S. Höfling, R. Kallweit, J. Seufert, J. Koeth, J. P. Reithmaier, and A. Forchel
J. Cryst. Growth 278, 775 (2005), DOI: 10.1016/j.jcrysgro.2004.12.096

Device performance and wavelength tuning behavior of ultra-short quantum-cascade microlasers with deeply etched Bragg-mirrors
S. Höfling, J. P. Reithmaier, and A. Forchel
IEEE J. Select. Topics Quantum Electron. 11, 1048 (2005), DOI: 10.1109/JSTQE.2005.853849

GaAs/AlGaAs-Quantenkaskaden-Laser (GaAs/AlGaAs Quantum Cascade Lasers)
S. Höfling, J. P. Reithmaier, and A. Forchel
TM. Tech. Mess. 72, 366 (2005), DOI: 10.1524/teme.72.6.366.65628

Room temperature operation of ultra-short quantum cascade lasers with deeply etched Bragg mirrors
S. Höfling, J. Seufert, J. P. Reithmaier, and A. Forchel
Electron. Lett. 41, 704 (2005), DOI: 10.1049/el:20051145

Low-loss InP-based photonic crystal waveguides and resonators
M. Kamp, J. Zimmermann, R. Maerz, S. Anand, and A. Forchel
Proc. SPIE, Optoelectronic Integrated Circuits VII, 249 (2005), DOI: 10.1117/12.590770

Photoreflectance spectroscopy of step-like GaInNAs/GaInNAs/GaAs quantum wells
R. Kudrawiec, J. Andrzejewski, J. Misiewicz, D. Gollub, and A. Forchel
Phys. Status Solidi A 202, 1255 (2005), DOI: 10.1002/pssa.200460911

STEM-study of 1.3μm InAs/InGaAs quantum dot structures
T. Kümmell, A. Sauerwald, D. Spranger, G. Bacher, R. Krebs, J. P. Reithmaier, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 26, 241 (2005), DOI: 10.1016/j.physe.2004.08.103

Codirectional couplers in GaAs-based planar photonic crystals
D. Leuenberger, R. Ferrini, L. A. Dunbar, R. Houdré, M. Kamp, and A. Forchel
Appl. Phys. Lett. 86, 81108 (2005), DOI: 10.1063/1.1871346

Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions
A. Löffler, J. P. Reithmaier, G. Sęk, C. Hofmann, S. Reitzenstein, M. Kamp, and A. Forchel
Appl. Phys. Lett. 86, 111105 (2005), DOI: 10.1063/1.1880446

Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells
J. Misiewicz, R. Kudrawiec, M. Motyka, J. Andrzejewski, D. Gollub, and A. Forchel
Microelectron. J. 36, 446 (2005), DOI: 10.1016/j.mejo.2005.02.043

Control of vertically coupled InGaAs/GaAs quantum dots with electric fields
G. Ortner, M. Bayer, Y. B. Lyanda-Geller, T. L. Reinecke, A. Kress, J. P. Reithmaier, and A. Forchel
Phys. Rev. Lett. 94, 157401 (2005), DOI: 10.1103/PhysRevLett.94.157401

Temperature dependence of the excitonic band gap in InxGa1−xAs∕GaAs self-assembled quantum dots
G. Ortner, M. Schwab, M. Bayer, R. Pässler, S. Fafard, Z. R. Wasilewski, P. Hawrylak, and A. Forchel
Phys. Rev. B 72 (2005), DOI: 10.1103/PhysRevB.72.085328

Fine structure in the excitonic emission of InAs∕GaAs quantum dot molecules
G. Ortner, I. Yugova, G. Baldassarri Höger von Högersthal, A. V. Larionov, H. Kurtze, D. R. Yakovlev, M. Bayer, S. Fafard, Z. R. Wasilewski, P. Hawrylak, Y. B. Lyanda-Geller, T. L. Reinecke, A. Babinski, M. Potemski, V. B. Timofeev, and A. Forchel
Phys. Rev. B 71 (2005), DOI: 10.1103/PhysRevB.71.125335

InP based lasers and optical amplifiers with wire-/dot-like active regions
J. P. Reithmaier, A. Somers, S. Deubert, R. Schwertberger, W. Kaiser, A. Forchel, M. Calligaro, P. Resneau, O. Parillaud, S. Bansropun, M. Krakowski, R. Alizon, D. Hadass, A. Bilenca, H. Dery, V. Mikhelashvili, G. Eisenstein, M. Gioannini, I. Montrosset, T. W. Berg, M. van der Poel, J. Mørk, and B. Tromborg
J. Phys. D: Appl. Phys. 38, 2088 (2005), DOI: 10.1088/0022-3727/38/13/004

Compact logic NAND-gate based on a single in-plane quantum-wire transistor
S. Reitzenstein, L. Worschech, C. R. Müller, and A. Forchel
IEEE Electron Device Lett. 26, 142 (2005), DOI: 10.1109/LED.2004.842651

Gain, index variation, and linewidth-enhancement factor in 980-nm quantum-well and quantum-dot lasers
D. Rodriguez, I. Esquivias, S. Deubert, J. P. Reithmaier, A. Forchel, M. Krakowski, M. Calligaro, and O. Parillaud
IEEE J. Quantum Electron. 41, 117 (2005), DOI: 10.1109/JQE.2004.840083

Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6μm
K. Rößner, M. Hümmer, A. Benkert, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 30, 159 (2005), DOI: 10.1016/j.physe.2005.08.003

Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures
W. Rudno-Rudziński, G. Sęk, K. Ryczko, R. Kudrawiec, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 86, 101904 (2005), DOI: 10.1063/1.1881782

Size control of InAs quantum dashes
A. Sauerwald, T. Kümmell, G. Bacher, A. Somers, R. Schwertberger, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 86, 253112 (2005), DOI: 10.1063/1.1954903

Tunable GaInNAs lasers with photonic crystal mirrors
H. Scherer, D. Gollub, M. Kamp, and A. Forchel
IEEE Photon. Technol. Lett. 17, 2247 (2005), DOI: 10.1109/LPT.2005.857989

GaAs-based four-channel photonic crystal quantum dot laser module operating at 1.3 [micro sign]m
H. Scherer, K. Namje, S. Deubert, A. Löffler, J. P. Reithmaier, M. Kamp, and A. Forchel
Electron. Lett. 41, 1121 (2005), DOI: 10.1049/el:20052826

Integrated four-channel GaAs-based quantum dot laser module with photonic crystals
H. Scherer, K. Namje, S. Deubert, A. Löffler, J. P. Reithmaier, M. Kamp, and A. Forchel
J. Vac. Sci. Technol. B 23, 3193 (2005), DOI: 10.1116/1.2062347

Polarization-dependent optical properties of planar photonic crystals infiltrated with liquid crystals
C. Schüller, J. P. Reithmaier, J. Zimmermann, M. Kamp, A. Forchel, and S. Anand
Appl. Phys. Lett. 87, 121105 (2005), DOI: 10.1063/1.2053353

Monomodige DFB-Quantenkaskadenlaser mit Metall-Bragg-Rückkopplungsgittern (Single Mode Quantum Cascade DFB-Lasers with Metal Bragg gratings)
J. Seufert, J. Koeth, M. Fischer, S. Höfling, J. P. Reithmaier, and A. Forchel
TM. Tech. Mess. 72, 374 (2005), DOI: 10.1524/teme.72.6.374.65636

Correlated photon-pair emission from a charged single quantum dot
S. M. Ulrich, M. Benyoucef, P. Michler, N. Baer, P. Gartner, F. Jahnke, M. Schwab, H. Kurtze, M. Bayer, S. Fafard, Z. R. Wasilewski, and A. Forchel
Phys. Rev. B 71 (2005), DOI: 10.1103/PhysRevB.71.235328

Nonlinear properties of ballistic nanoelectronic devices
L. Worschech, D. Hartmann, S. Reitzenstein, and A. Forchel
J. Phys.: Condens. Matter 17, R775-R802 (2005), DOI: 10.1088/0953-8984/17/29/R01

Large dispersion in photonic crystal waveguide resonator
J. Zimmermann, B. K. Saravanan, R. März, M. Kamp, A. Forchel, and S. Anand
Electron. Lett. 41, 414 (2005), DOI: 10.1049/el:20057366

Multiple wavelength amplification in wide band high power 1550 nm quantum dash optical amplifier
R. Alizon, D. Hadass, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, A. Somers, J. P. Reithmaier, A. Forchel, M. Calligaro, S. Bansropun, and M. Krakowski
Electron. Lett. 40, 760 (2004), DOI: 10.1049/el:20040531

High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability
S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 84, 2238 (2004), DOI: 10.1063/1.1650913

22-GHz Modulation Bandwidth of Long Cavity DBR Laser by Using a Weakly Laterally Coupled Grating Fabricated by Focused Ion Beam Lithography
L. Bach, W. Kaiser, J. P. Reithmaier, A. Forchel, M. Gioannini, V. Feies, and I. Montrosset
IEEE Photon. Technol. Lett. 16, 18 (2004), DOI: 10.1109/lpt.2003.820463

Enhanced correlated photon pair emission from a pillar microcavity
M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, and A. Forchel
New J. Phys. 6, 91 (2004), DOI: 10.1088/1367-2630/6/1/091

On the nature of quantum dash structures
H. Dery, E. Benisty, A. Epstein, R. Alizon, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel
J. Appl. Phys. 95, 6103 (2004), DOI: 10.1063/1.1715135

Probing the N-induced states in dilute GaAsN alloys by magneto-tunnelling
J. Endicott, J. Ibáñez, A. Patanè, L. Eaves, M. Bissiri, M. Hopkinson, R. Airey, G. Hill, D. Gollub, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 21, 892 (2004), DOI: 10.1016/j.physe.2003.11.145

Photoreflectance and photoluminescence study of step-like GaInNAs/GaInNAs/GaAs quantum wells
A. Forchel, M. Motyka, J. Misiewicz, J. Andrzejewski, D. Gollub, and R. Kudrawiec
IEE Proc., Optoelectron. 151, 313 (2004), DOI: 10.1049/ip-opt:20040931

Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 [micro sign]m
D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris
Electron. Lett. 40, 1487 (2004), DOI: 10.1049/el:20046601

GaInNAs-based distributed feedback laser diodes emitting at 1.5 [micro sign]m
D. Gollub, S. Moses, M. Fischer, M. Kamp, and A. Forchel
Electron. Lett. 40, 427 (2004), DOI: 10.1049/el:20040279

1.3 [micro sign]m double quantum well GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth
D. Gollub, S. Moses, and A. Forchel
Electron. Lett. 40, 1181 (2004), DOI: 10.1049/el:20046042

Comparison of GaInNAs Laser Diodes Based on Two to Five Quantum Wells
D. Gollub, S. Moses, and A. Forchel
IEEE J. Quantum Electron. 40, 337 (2004), DOI: 10.1109/jqe.2004.825112

Spectrally resolved dynamics of inhomogeneously broadened gain in InAs∕InP1550nm quantum-dash lasers
D. Hadass, R. Alizon, H. Dery, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, A. Somers, J. P. Reithmaier, A. Forchel, M. Calligaro, S. Bansropun, and M. Krakowski
Appl. Phys. Lett. 85, 5505 (2004), DOI: 10.1063/1.1832761

GaInAsSb–AlGaAsSb Distributed Feedback Lasers Emitting Near 2.4>tex<$muhbox m$>/tex<
M. Hümmer, K. Roner, A. Benkert, and A. Forchel
IEEE Photon. Technol. Lett. 16, 380 (2004), DOI: 10.1109/LPT.2003.821239

High-Speed Coupled-Cavity Injection Grating Lasers With Tailored Modulation Transfer Functions
W. Kaiser, L. Bach, J. P. Reithmaier, and A. Forchel
IEEE Photon. Technol. Lett. 16, 1997 (2004), DOI: 10.1109/LPT.2004.831928

Semiconductor photonic crystals for optoelectronics
M. Kamp, T. D. Happ, S. Mahnkopf, G.-H. Duan, S. Anand, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 21, 802 (2004), DOI: 10.1016/j.physe.2003.11.122

Temperature evolution of photoluminescence from an In0.22Ga0.78Sb/GaSb single quantum well
R. Kudrawiec, L. Bryja, J. Misiewicz, and A. Forchel
Mater. Sci. Eng. B 110, 42 (2004), DOI: 10.1016/j.mseb.2004.02.007

Optical properties of GaInNAs/GaAs quantum wells: character of optical transitions and carrier localisation effect
R. Kudrawiec, J. Misiewicz, M. Fisher, and A. Forchel
Phys. Status Solidi A 201, 364 (2004), DOI: 10.1002/pssa.200303963

Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures
R. Kudrawiec, G. Sęk, P. Sitarek, K. Ryczko, J. Misiewicz, T. Wang, and A. Forchel
Thin Solid Films 450, 71 (2004), DOI: 10.1016/j.tsf.2003.10.054

Carrier leakage suppression utilising short-period superlattices in 980 nm InGaAs/GaAs quantum well lasers
D. Lock, S. J. Sweeney, A. R. Adams, S. Deubner, F. Klopf, J. P. Reithmaier, and A. Forchel
Phys. Status Solidi B 241, 3405 (2004), DOI: 10.1002/pssb.200405209

Two-Channel Tunable Laser Diode Based on Photonic Crystals
S. Mahnkopf, M. Arlt, M. Kamp, V. Colson, G.-H. Duan, and A. Forchel
IEEE Photon. Technol. Lett. 16, 353 (2004), DOI: 10.1109/LPT.2003.823130

Wavelength switching by mode interference between longitudinally coupled photonic crystal channel waveguides
S. Mahnkopf, H. Hsin, G.-H. Duan, F. Lelarge, T. D. Happ, M. Kamp, R. März, and A. Forchel
Electron. Lett. 40, 29 (2004), DOI: 10.1049/el:20040009

Widely Tunable Complex-Coupled Distributed Feedback Laser With Photonic Crystal Mirrors and Integrated Optical Amplifier
S. Mahnkopf, M. Kamp, M. Arlt, R. März, F. Lelarge, G.-H. Duan, and A. Forchel
IEEE Photon. Technol. Lett. 16, 729 (2004), DOI: 10.1109/LPT.2004.823765

Mode anti-crossing and carrier transport effects in tunable photonic crystal coupled-cavity lasers
S. Mahnkopf, M. Kamp, A. Forchel, F. Lelarge, G.-H. Duan, and R. März
Opt. Commun. 239, 187 (2004), DOI: 10.1016/j.optcom.2004.05.036

Tunable photonic crystal coupled-cavity laser
S. Mahnkopf, R. März, M. Kamp, G.-H. Duan, F. Lelarge, and A. Forchel
IEEE J. Quantum Electron. 40, 1306 (2004), DOI: 10.1109/JQE.2004.831638

Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure
I. P. Marko, S. J. Sweeney, A. R. Adams, S. R. Jin, B. N. Murdin, R. Schwertberger, A. Somers, J. P. Reithmaier, and A. Forchel
Phys. Status Solidi B 241, 3427 (2004), DOI: 10.1002/pssb.200405219

Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
J. Misiewicz, R. Kudrawiec, K. Ryczko, G. Sęk, A. Forchel, J. C. Harmand, and M. Hammar
J. Phys.: Condens. Matter 16, S3071-S3094 (2004), DOI: 10.1088/0953-8984/16/31/006

Coherent InGaAs∕GaAs laser arrays with laterally coupled distributed feedback gratings
M. Müller, M. Kamp, S. Deubert, J. P. Reithmaier, and A. Forchel
Electron. Lett. 40, 118 (2004), DOI: 10.1049/el:20040103

Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching
M. Mulot, S. Anand, R. Ferrini, B. Wild, R. Houdré, J. Moosburger, and A. Forchel
J. Vac. Sci. Technol. B 22, 707 (2004), DOI: 10.1116/1.1688353

Nonlinear emission from II–VI photonic dots in the strong coupling regime
M. Obert, J. Renner, G. Bacher, A. Forchel, R. André, and D. Le Si Dang
Physica E Low Dimens. Syst. Nanostruct. 21, 835 (2004), DOI: 10.1016/j.physe.2003.11.136

Nonlinear emission in II–VI pillar microcavities: Strong versus weak coupling
M. Obert, J. Renner, A. Forchel, G. Bacher, R. André, and D. Le Si Dang
Appl. Phys. Lett. 84, 1435 (2004), DOI: 10.1063/1.1651646

Electric field control of exciton states in quantum dot molecules
G. Ortner, M. Bayer, A. Kress, A. Forchel, Y. B. Lyanda-Geller, and T. L. Reinecke
Physica E Low Dimens. Syst. Nanostruct. 21, 171 (2004), DOI: 10.1016/j.physe.2003.11.011

Exciton states in self-assembled InAs/GaAs quantum dot molecules
G. Ortner, M. Schwab, P. Borri, W. Langbein, U. Woggon, M. Bayer, S. Fafard, Z. R. Wasilewski, P. Hawrylak, Y. B. Lyanda-Geller, T. L. Reinecke, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 25, 249 (2004), DOI: 10.1016/j.physe.2004.06.024

Temperature dependence of the zero-phonon linewidth in InAs∕GaAs quantum dots
G. Ortner, D. R. Yakovlev, M. Bayer, S. Rudin, T. L. Reinecke, S. Fafard, Z. R. Wasilewski, and A. Forchel
Phys. Rev. B 70 (2004), DOI: 10.1103/PhysRevB.70.201301

Strong coupling in a single quantum dot-semiconductor microcavity system
J. P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel
Nature 432, 197 (2004), DOI: 10.1038/nature02969

Room Temperature Operation of an In-Plane Half-Adder Based on Ballistic Y–Junctions
S. Reitzenstein, L. Worschech, and A. Forchel
IEEE Electron Device Lett. 25, 462 (2004), DOI: 10.1109/LED.2004.831225

Drain voltage induced barrier increasing of quantum-wire transistors
S. Reitzenstein, L. Worschech, D. Hartmann, and A. Forchel
Electron. Lett. 40, 75 (2004), DOI: 10.1049/el:20040060

GaAs-based 1.3 μm microlasers with photonic crystal mirrors
H. Scherer, D. Gollub, M. Kamp, and A. Forchel
J. Vac. Sci. Technol. B 22, 3344 (2004), DOI: 10.1116/1.1823434

Magnetic imprinting of submicron ferromagnetic wires on a diluted magnetic semiconductor quantum well
H. Schömig, A. Forchel, S. Halm, G. Bacher, J. Puls, and F. Henneberger
Appl. Phys. Lett. 84, 2826 (2004), DOI: 10.1063/1.1695199

Micromagnetoluminescence on ferromagnet–semiconductor hybrid nanostructures
H. Schömig, S. Halm, G. Bacher, A. Forchel, W. Kipferl, C. H. Back, J. Puls, and F. Henneberger
J. Appl. Phys. 95, 7411 (2004), DOI: 10.1063/1.1652392

Probing individual localization centers in an InGaN/GaN quantum well
H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz
Phys. Rev. Lett. 92, 106802 (2004), DOI: 10.1103/PhysRevLett.92.106802

Impact of optical confinement on elastic polariton scattering in semiconductor microcavities
M. Schwab, G. Dasbach, M. Bayer, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 21, 825 (2004), DOI: 10.1016/j.physe.2003.11.140

Spin injection into a single self-assembled quantum dot
J. Seufert, G. Bacher, H. Schömig, A. Forchel, L. Hansen, G. Schmidt, and L. W. Molenkamp
Phys. Rev. B 69 (2004), DOI: 10.1103/PhysRevB.69.035311

DFB laser diodes in the wavelength range from 760 nm to 2.5 microm
J. Seufert, M. Fischer, M. Legge, J. Koeth, R. Werner, M. Kamp, and A. Forchel
Spectrochim. Acta A Mol. Biomol. Spectrosc. 60, 3243 (2004), DOI: 10.1016/j.saa.2003.11.043

Photonic crystal waveguide directional couplers as wavelength selective optical filters
J. Zimmermann, M. Kamp, A. Forchel, and R. März
Opt. Commun. 230, 387 (2004), DOI: 10.1016/j.optcom.2003.11.026

Photonic crystal waveguides with propagation losses in the 1 dB∕mm range
J. Zimmermann, H. Scherer, M. Kamp, S. Deubert, J. P. Reithmaier, A. Forchel, R. März, and S. Anand
J. Vac. Sci. Technol. B 22, 3356 (2004), DOI: 10.1116/1.1824053

Nach oben

Cross-gain modulation in inhomogeneously broadened gain spectra of InP-Based 1550 nm quantum dash optical amplifiers: Small-signal bandwidth dependence on wavelength detuning
R. Alizon, A. Bilenca, H. Dery, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 82, 4660 (2003), DOI: 10.1063/1.1588372

Enhanced direct-modulated bandwidth of 37 GHz by a multi-section laser with a coupled-cavity-injection-grating design
L. Bach, W. Kaiser, J. P. Reithmaier, A. Forchel, T. W. Berg, and B. Tromborg
Electron. Lett. 39, 1592 (2003), DOI: 10.1049/el:20031018

1.54 [micro sign]m singlemode InP-based Q-dash lasers
L. Bach, W. Kaiser, R. Schwertberger, J. P. Reithmaier, and A. Forchel
Electron. Lett. 39, 985 (2003), DOI: 10.1049/el:20030640

Wavelength stabilized single-mode lasers by coupled micro-square resonators
L. Bach, J. P. Reithmaier, A. Forchel, J.-L. Gentner, and L. Goldstein
IEEE Photon. Technol. Lett. 15, 377 (2003), DOI: 10.1109/LPT.2002.807938

Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures
G. Baldassarri Höger von Högersthal, A. Polimeni, F. Masia, M. Bissiri, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
Phys. Rev. B 67 (2003), DOI: 10.1103/PhysRevB.67.233304

Optical detection of the Aharonov-Bohm effect on a charged particle in a nanoscale quantum ring
M. Bayer, M. Korkusinski, P. Hawrylak, T. Gutbrod, M. Michel, and A. Forchel
Phys. Rev. Lett. 90, 186801 (2003), DOI: 10.1103/PhysRevLett.90.186801

Broad-band wavelength conversion based on cross-gain modulation and four-wave mixing in InAs-InP quantum-dash semiconductor optical amplifiers operating at 1550 nm
A. Bilenca, R. Alizon, V. Mikhelashvili, D. Dahan, G. Eisenstein, R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel
IEEE Photon. Technol. Lett. 15, 563 (2003), DOI: 10.1109/LPT.2003.809281

Magneto-optical studies of 2D hole Landau levels and screening of donor states in p-type modulation doped Ga0.5Al0.5As/GaAs interfaces
L. Bryja, K. Ryczko, M. Kubisa, J. Misiewicz, G. Ortner, A. Kress, M. Bayer, A. Forchel, and C. B. Sørensen
Physica E Low Dimens. Syst. Nanostruct. 17, 260 (2003), DOI: 10.1016/S1386-9477(02)00790-7

Atomic ordering in (InGa)(AsN) quantum wells: An In K-edge X-ray absorption investigation
G. Ciatto, F. Boscherini, F. D’Acapito, S. Mobilio, G. Baldassarri Höger von Högersthal, A. Polimeni, M. Capizzi, D. Gollub, and A. Forchel
Nucl. Instrum. Methods Phys. Res. B: Beam Interact. Mater. At. 200, 34 (2003), DOI: 10.1016/S0168-583X(02)01671-3

Spatial photon trapping: tailoring the optical properties of semiconductor microcavities
G. Dasbach, M. Bayer, M. Schwab, and A. Forchel
Semicond. Sci. Technol. 18, 1056 (2003), DOI: 10.1088/0268-1242/18/12/C02

Spatial photon trapping: tailoring the optical properties of semiconductor microcavities
G. Dasbach, M. Bayer, M. Schwab, and A. Forchel
Semicond. Sci. Technol. 18, 1056 (2003), DOI: 10.1088/0268-1242/18/12/C02

Impact of optical confinement on elastic polariton scattering in semiconductor microcavities
G. Dasbach, M. Schwab, M. Bayer, D. N. Krizhanovskii, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 17, 461 (2003), DOI: 10.1016/S1386-9477(02)00837-8

Preamplified planar microcoil on GaAs substrates for microspectroscopy
J. Dechow, T. Lanz, M. Stumber, A. Forchel, and A. Haase
Rev. Sci. Instrum. 74, 4855 (2003), DOI: 10.1063/1.1614412

Longitudinal and transverse fluctuations of magnetization of the excitonic magnetic polaron in a semimagnetic single quantum dot
P. S. Dorozhkin, A. V. Chernenko, V. D. Kulakovskii, A. S. Brichkin, A. A. Maksimov, H. Schömig, G. Bacher, A. Forchel, S. Lee, M. Dobrowolska, and J. K. Furdyna
Phys. Rev. B 68 (2003), DOI: 10.1103/PhysRevB.68.195313

GaInNAs for GaAs based lasers for the 1.3 to 1.5μm range
M. Fischer, D. Gollub, M. Reinhardt, M. Kamp, and A. Forchel
J. Cryst. Growth 251, 353 (2003), DOI: 10.1016/S0022-0248(02)02435-1

Switching light with light
A. Forchel
Nat. Mater. 2, 13 (2003), DOI: 10.1038/nmat801

Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1−xAs1−yNy alloy
M. Geddo, G. Guizzetti, M. Capizzi, A. Polimeni, D. Gollub, and A. Forchel
Appl. Phys. Lett. 83, 470 (2003), DOI: 10.1063/1.1594279

1.42 [micro sign]m continuous-wave operation of GaInNAs laser diodes
D. Gollub, S. Moses, M. Fischer, and A. Forchel
Electron. Lett. 39, 777 (2003), DOI: 10.1049/el:20030532

1.4 [micro sign]m continuous-wave GaInNAs distributed feedback laser diodes
D. Gollub, S. Moses, M. Kamp, and A. Forchel
Electron. Lett. 39, 1815 (2003), DOI: 10.1049/el:20031166

Coupling of point-defect microcavities in two-dimensional photonic-crystal slabs
T. D. Happ, M. Kamp, A. Forchel, A. V. Bazhenov, I. I. Tartakovskii, A. Gorbunov, and V. D. Kulakovskii
J. Opt. Soc. Am. B 20, 373 (2003), DOI: 10.1364/JOSAB.20.000373

Two-dimensional photonic crystal coupled-defect laser diode
T. D. Happ, M. Kamp, A. Forchel, J.-L. Gentner, and L. Goldstein
Appl. Phys. Lett. 82, 4 (2003), DOI: 10.1063/1.1527703

Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3μm
R. Krebs, S. Deubert, J. P. Reithmaier, and A. Forchel
J. Cryst. Growth 251, 742 (2003), DOI: 10.1016/S0022-0248(02)02385-0

Photoluminescence investigations of two-dimensional hole Landau levels in p -type single AlxGa1−xAs/GaAs heterostructures
M. Kubisa, L. Bryja, K. Ryczko, J. Misiewicz, C. Bardot, M. Potemski, G. Ortner, M. Bayer, A. Forchel, and C. B. Sørensen
Phys. Rev. B 67 (2003), DOI: 10.1103/PhysRevB.67.035305

Optical properties of an In0.22Ga0.78Sb/GaSb single quantum well
R. Kudrawiec, L. Bryja, G. Sęk, K. Ryczko, J. Misiewicz, and A. Forchel
Cryst. Res. Technol. 38, 399 (2003), DOI: 10.1002/crat.200310050

Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells
R. Kudrawiec, G. Sęk, J. Misiewicz, D. Gollub, and A. Forchel
Appl. Phys. Lett. 83, 2772 (2003), DOI: 10.1063/1.1615673

Infrared photoreflectance spectroscopy of AlGaAsSb-, InGaSb-based quantum wells
R. Kudrawiec, G. Sęk, K. Ryczko, J. Misiewicz, and A. Forchel
Mater. Sci. Eng. B 102, 331 (2003), DOI: 10.1016/S0921-5107(02)00648-7

Tunable distributed feedback laser with photonic crystal mirrors
S. Mahnkopf, M. Kamp, A. Forchel, and R. März
Appl. Phys. Lett. 82, 2942 (2003), DOI: 10.1063/1.1571662

Wavelength switching by mode interference of coupled cavities with photonic crystal reflectors
S. Mahnkopf, M. Kamp, R. März, G.-H. Duan, V. Colson, and A. Forchel
Appl. Phys. B 77, 733 (2003), DOI: 10.1007/s00340-003-1320-6

Unidirectional laterally gain-coupled distributed feedback ring laser diodes
S. Mahnkopf, M. Kamp, R. März, and A. Forchel
Electron. Lett. 39, 1055 (2003), DOI: 10.1049/el:20030711

High-pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasers
I. P. Marko, A. D. Andreev, A. R. Adams, R. Krebs, J. P. Reithmaier, and A. Forchel
Phys. Status Solidi B 235, 407 (2003), DOI: 10.1002/pssb.200301619

Importance of Auger recombination in InAs 1.3 [micro sign]m quantum dot lasers
I. P. Marko, A. D. Andreev, A. R. Adams, R. Krebs, J. P. Reithmaier, and A. Forchel
Electron. Lett. 39, 58 (2003), DOI: 10.1049/el:20030014

The role of auger recombination in inas 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure
I. P. Marko, A. D. Andreev, A. R. Adams, R. Krebs, J. P. Reithmaier, and A. Forchel
IEEE J. Select. Topics Quantum Electron. 9, 1300 (2003), DOI: 10.1109/JSTQE.2003.819504

Magneto-optical investigations of single self-assembled InAs/InGaAlAs quantum dashes
T. Mensing, L. Worschech, R. Schwertberger, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 82, 2799 (2003), DOI: 10.1063/1.1570518

Photomodulation spectroscopy applied to low-dimensional semiconductor structures
J. Misiewicz, G. Sęk, R. Kudrawiec, K. Ryczko, D. Gollub, J. P. Reithmaier, and A. Forchel
Microelectron. J. 34, 351 (2003), DOI: 10.1016/S0026-2692(03)00024-7

Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells
J. Misiewicz, P. Sitarek, K. Ryczko, R. Kudrawiec, M. Fischer, M. Reinhardt, and A. Forchel
Microelectron. J. 34, 737 (2003), DOI: 10.1016/S0026-2692(03)00115-0

1.3-μm continuously tunable distributed feedback laser with constant power output based on GaInNAs-GaAs
M. Müller, D. Gollub, M. Fischer, M. Kamp, and A. Forchel
IEEE Photon. Technol. Lett. 15, 897 (2003), DOI: 10.1109/LPT.2003.813449

Magneto-tunnelling spectroscopy of nitrogen clusters in Ga(AsN) alloys
A. Neumann, A. Patanè, L. Eaves, A. E. Belyaev, D. Gollub, A. Forchel, and M. Kamp
IEE Proc., Optoelectron. 150, 49 (2003), DOI: 10.1049/ip-opt:20030036

Fine structure of excitons in InAs/GaAs coupled auantum dots: a sensitive test of electronic coupling
G. Ortner, M. Bayer, A. V. Larionov, V. B. Timofeev, A. Forchel, Y. B. Lyanda-Geller, T. L. Reinecke, P. Hawrylak, S. Fafard, and Z. R. Wasilewski
Phys. Rev. Lett. 90, 86404 (2003), DOI: 10.1103/PhysRevLett.90.086404

Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures
A. Polimeni, M. Bissiri, G. Baldassarri Höger von Högersthal, M. Capizzi, D. Giubertoni, M. Barozzi, M. Bersani, D. Gollub, M. Fischer, and A. Forchel
Solid-State Electron. 47, 447 (2003), DOI: 10.1016/S0038-1101(02)00387-8

Photonic crystal optical filter based on contra-directional waveguide coupling
M. Qiu, M. Mulot, M. Swillo, S. Anand, B. Jaskorzynska, A. Karlsson, M. Kamp, and A. Forchel
Appl. Phys. Lett. 83, 5121 (2003), DOI: 10.1063/1.1634373

Recent advances in semiconductor quantum-dot lasers
J. P. Reithmaier and A. Forchel
C. R. Phys. 4, 611 (2003), DOI: 10.1016/S1631-0705(03)00075-6

Semiconductor quantum dots - A new class of gain materials for advanced optoelectronics
J. P. Reithmaier and A. Forchel
IEEE Circuits Devices Mag. 19, 24 (2003), DOI: 10.1109/MCD.2003.1263457

A novel half-adder circuit based on nanometric ballistic Y-branched junctions
S. Reitzenstein, L. Worschech, and A. Forchel
IEEE Electron Device Lett. 24, 625 (2003), DOI: 10.1109/LED.2003.817873

Pronounced switching bistability in a feedback coupled nanoelectronic Y-branch switch
S. Reitzenstein, L. Worschech, P. Hartmann, and A. Forchel
Appl. Phys. Lett. 82, 1980 (2003), DOI: 10.1063/1.1563311

In situ lateral growth control of optically efficient quantum structures
T. Schallenberg, W. Faschinger, G. Karczewski, L. W. Molenkamp, V. Türck, S. Rodt, R. Heitz, D. Bimberg, M. Obert, G. Bacher, and A. Forchel
Appl. Phys. Lett. 83, 446 (2003), DOI: 10.1063/1.1592894

Spin Dynamics in CdSe/ZnSe Quantum Dots: Resonant Versus Nonresonant Excitation
M. Scheibner, G. Bacher, A. Forchel, T. Passow, and D. Hommel
J. Supercond. Nov. Magn. 16, 395 (2003), DOI: 10.1023/A:1023602511867

Polarization dynamics in self-assembled CdSe/ZnSe quantum dots: The role of excess energy
M. Scheibner, G. Bacher, S. Weber, A. Forchel, T. Passow, and D. Hommel
Phys. Rev. B 67 (2003), DOI: 10.1103/PhysRevB.67.153302

Laser-controlled magnetization in a single magnetic semiconductor quantum dot
H. Schömig, G. Bacher, A. Forchel, S. Lee, M. Dobrowolska, and J. K. Furdyna
J. Supercond. Nov. Magn. 16, 379 (2003), DOI:

Tunable photonic crystals fabricated in III-V semiconductor slab waveguides using infiltrated liquid crystals
C. Schüller, F. Klopf, J. P. Reithmaier, M. Kamp, and A. Forchel
Appl. Phys. Lett. 82, 2767 (2003), DOI: 10.1063/1.1570921

Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications
R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel
J. Cryst. Growth 251, 248 (2003), DOI: 10.1016/S0022-0248(02)02371-0

Single-electron charging of a self-assembled II–VI quantum dot
J. Seufert, M. Rambach, G. Bacher, A. Forchel, T. Passow, and D. Hommel
Appl. Phys. Lett. 82, 3946 (2003), DOI: 10.1063/1.1580632

Optical investigations of InGaAsN/GaAs single quantum well structures
P. Sitarek, K. Ryczko, G. Sęk, J. Misiewicz, M. Fischer, M. Reinhardt, and A. Forchel
Solid-State Electron. 47, 489 (2003), DOI: 10.1016/S0038-1101(02)00400-8

Single-photon and photon-pair emission from CdSe/Zn(S,Se) quantum dots
S. Strauf, S. M. Ulrich, K. Sebald, P. Michler, T. Passow, D. Hommel, G. Bacher, and A. Forchel
Phys. Status Solidi B 238, 321 (2003), DOI: 10.1002/pssb.200303060

High-power 980 nm quantum dot broad area lasers
B. Sumpf, S. Deubert, G. Erbert, J. Fricke, J. P. Reithmaier, A. Forchel, R. Staske, and G. Tränkle
Electron. Lett. 39, 1655 (2003), DOI: 10.1049/el:20031024

Generation of strongly polarization-correlated photon pairs by cascaded emission from individual CdSe/ZnSe quantum dots
S. M. Ulrich, S. Strauf, P. Michler, G. Bacher, and A. Forchel
Phys. Status Solidi B 238, 607 (2003), DOI: 10.1002/pssb.200303185

Triggered polarization-correlated photon pairs from a single CdSe quantum dot
S. M. Ulrich, S. Strauf, P. Michler, G. Bacher, and A. Forchel
Appl. Phys. Lett. 83, 1848 (2003), DOI: 10.1063/1.1605809

Exciton dynamics in InGaAsN/GaAs heterostructures
A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
Phys. Status Solidi A 195, 558 (2003), DOI: 10.1002/pssa.200306152

Role of the host matrix in the carrier recombination of InGaAsN alloys
A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
Appl. Phys. Lett. 82, 2805 (2003), DOI: 10.1063/1.1569983

Single quantum dot pairs with controllable interdot coupling
M. K. Welsch, G. Bacher, H. Schömig, A. Forchel, S. Zaitsev, C. R. Becker, and L. W. Molenkamp
Phys. Status Solidi B 238, 313 (2003), DOI: 10.1002/pssb.200303054

Self-switching of branched multiterminal junctions: a ballistic half-adder
L. Worschech, S. Reitzenstein, P. Hartmann, S. Kaiser, M. Kamp, and A. Forchel
Appl. Phys. Lett. 83, 2462 (2003), DOI: 10.1063/1.1613049

Ballistic transport in nanoscale field effect transistors revealed by four-terminal DC characterization
L. Worschech, A. Schliemann, H. Hsin, A. Forchel, G. Curatola, and G. Iannaccone
Superlattices Microstruct. 34, 271 (2003), DOI: 10.1016/j.spmi.2004.03.019

Nach oben

Capture and confinement of light and carriers in graded-index quantum well laser structures
G. Aichmayr, H. P. van der Meulen, L. Viña, M. Calleja, F. Schäfer, J. P. Reithmaier, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 13, 885 (2002), DOI: 10.1016/S1386-9477(02)00226-6

Deeply etched two-dimensional photonic crystals fabricated on GaAs/AlGaAs slab waveguides by using chemically assisted ion beam etching
K. Avary, J. P. Reithmaier, F. Klopf, T. D. Happ, M. Kamp, and A. Forchel
Microelectron. Eng. 61-62, 875 (2002), DOI: 10.1016/S0167-9317(02)00454-9

Laterally coupled DBR laser emitting at 1.55 μm fabricated by focused ion beam lithography
L. Bach, S. Rennon, J. P. Reithmaier, A. Forchel, J.-L. Gentner, and L. Goldstein
IEEE Photon. Technol. Lett. 14, 1037 (2002), DOI: 10.1109/LPT.2002.1021961

Monitoring statistical magnetic fluctuations on the nanometer scale
G. Bacher, A. A. Maksimov, H. Schömig, V. D. Kulakovskii, M. K. Welsch, A. Forchel, P. S. Dorozhkin, A. V. Chernenko, S. Lee, M. Dobrowolska, and J. K. Furdyna
Phys. Rev. Lett. 89, 127201 (2002), DOI: 10.1103/PhysRevLett.89.127201

Optical Spectroscopy on Non-Magnetic and Semimagnetic Single Quantum Dots in External Fields
G. Bacher, H. Schmig, J. Seufert, M. Rambach, A. Forchel, A. A. Maksimov, V. D. Kulakovskii, T. Passow, D. Hommel, C. R. Becker, and L. W. Molenkamp
Phys. Status Solidi B 229, 415 (2002), DOI: 10.1002/1521-3951(200201)229:1<415::AID-PSSB415>3.0.CO;2-W

Nano-Optics on Individual Quantum Objects - From Single to Coupled Semiconductor Quantum Dots
G. Bacher, H. Schömig, M. K. Welsch, M. Scheibner, J. Seufert, M. Obert, A. Forchel, A. A. Maksimov, S. Zaitsev, and V. D. Kulakovskii
Acta Phys. Pol. A 102, 475 (2002), DOI: 10.12693/APhysPolA.102.475

Reversibility of the effects of hydrogen on the electronic properties of InxGa1−xAs1−yNy
G. Baldassarri Höger von Högersthal, M. Bissiri, F. Ranalli, V. Gaspari, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 13, 1082 (2002), DOI: 10.1016/S1386-9477(02)00308-9

Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots
M. Bayer and A. Forchel
Phys. Rev. B 65 (2002), DOI: 10.1103/PhysRevB.65.041308

Feature Article: Confinement of Light in Microresonators for Controlling Light - Matter Interaction
M. Bayer, A. Forchel, T. L. Reinecke, P. A. Knipp, and S. Rudin
Phys. Status Solidi A 191, 1 (2002), DOI: 10.1002/1521-396X(200205)191:1<1::AID-PSSA1>3.0.CO;2-U

Fine structure of excitons: a sensitive tool for probing the symmetry of self-assembled quantum dots
M. Bayer, G. Ortner, A. Forchel, P. Hawrylak, and S. Fafard
Physica E Low Dimens. Syst. Nanostruct. 13, 123 (2002), DOI: 10.1016/S1386-9477(01)00501-X

Entangled exciton states in quantum dot molecules
M. Bayer, G. Ortner, A. V. Larionov, V. B. Timofeev, A. Forchel, P. Hawrylak, K. Hinzer, M. Korkusinski, S. Fafard, and Z. R. Wasilewski
Physica E Low Dimens. Syst. Nanostruct. 12, 900 (2002), DOI: 10.1016/S1386-9477(01)00462-3

Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots
M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer
Phys. Rev. B 65 (2002), DOI: 10.1103/PhysRevB.65.195315

Models and measurements for the transmission of submicron-width waveguide bends defined in two-dimensional photonic crystals
H. Benisty, S. Olivier, C. Weisbuch, M. Agio, M. Kafesaki, C. M. Soukoulis, M. Qiu, M. Swillo, A. Karlsson, B. Jaskorzynska, A. Talneau, R. Moosburger, M. Kamp, A. Forchel, R. Ferrini, R. Houdré, and U. Oesterle
IEEE J. Quantum Electron. 38, 770 (2002), DOI: 10.1109/JQE.2002.1017587

InAs∕InP 1550 nm quantum dash semiconductor optical amplifiers
A. Bilenca, R. Alizon, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel
Electron. Lett. 38, 1350 (2002), DOI: 10.1049/el:20020928

Role of N clusters in InxGa1−xAs1−yNy band-gap reduction
M. Bissiri, G. Baldassarri Höger von Högersthal, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel
Phys. Rev. B 66 (2002), DOI: 10.1103/PhysRevB.66.033311

Hydrogen-induced passivation of nitrogen in GaAs1−yNy
M. Bissiri, G. Baldassarri Höger von Högersthal, A. Polimeni, V. Gaspari, F. Ranalli, M. Capizzi, A. A. Bonapasta, F. Jiang, M. Stavola, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel
Phys. Rev. B 65 (2002), DOI: 10.1103/PhysRevB.65.235210

Nitrogen-Related Complexes in Ga(AsN) and Their Interaction with Hydrogen
M. Bissiri, V. Gaspari, G. Baldassarri Höger von Högersthal, F. Ranalli, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
Phys. Status Solidi A 190, 651 (2002), DOI: 10.1002/1521-396X(200204)190:3<651::AID-PSSA651>3.0.CO;2-N

Impurity-related emission in the photoluminescence from p-type modulation doped Al1−xGaxAs/GaAs heterostructures
L. Bryja, M. Kubisa, K. Ryczko, J. Misiewicz, A. V. Larionov, M. Bayer, A. Forchel, and C. B. Sørensen
Solid State Commun. 122, 379 (2002), DOI: 10.1016/S0038-1098(02)00134-5

Enhancement of the exciton exchange energy splitting by the confined light field in strained microcavities
G. Dasbach, A. A. Dremin, M. Bayer, N. A. Gippius, V. D. Kulakovskii, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 13, 394 (2002), DOI: 10.1016/S1386-9477(02)00148-0

Oscillations in the differential transmission of a semiconductor microcavity with reduced symmetry
G. Dasbach, A. A. Dremin, M. Bayer, V. D. Kulakovskii, N. A. Gippius, and A. Forchel
Phys. Rev. B 65 (2002), DOI: 10.1103/PhysRevB.65.245316

Tailoring the polariton dispersion by optical confinement: Access to a manifold of elastic polariton pair scattering channels
G. Dasbach, M. Schwab, M. Bayer, D. N. Krizhanovskii, and A. Forchel
Phys. Rev. B 66 (2002), DOI: 10.1103/PhysRevB.66.201201

Optical study of two-dimensional InP-based photonic crystals by internal light source technique
R. Ferrini, D. Leuenberger, M. Mulot, M. Qiu, R. Moosburger, M. Kamp, A. Forchel, S. Anand, and R. Houdré
IEEE J. Quantum Electron. 38, 786 (2002), DOI: 10.1109/JQE.2002.1017588

Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states
G. Fiori, G. Iannaccone, M. Macucci, S. Reitzenstein, S. Kaiser, M. Keßelring, L. Worschech, and A. Forchel
Nanotechnology 13, 299 (2002), DOI: 10.1088/0957-4484/13/3/312

1.3 µm GaInAsN Laserdiodes with improved High Temperature Performance
M. Fischer, D. Gollub, and A. Forchel
Jpn. J. Appl. Phys. 41, 1162 (2002), DOI: 10.1143/JJAP.41.1162

Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures
M. Geddo, R. Pezzuto, M. Capizzi, A. Polimeni, D. Gollub, M. Fischer, and A. Forchel
Eur. Phys. J. B 30, 39 (2002), DOI: 10.1140/epjb/e2002-00355-x

Towards high performance GaInAsN∕GaAsN laser diodes in 1.5 μm range
D. Gollub, M. Fischer, and A. Forchel
Electron. Lett. 38, 1183 (2002), DOI: 10.1049/el:20020812

1.3 μm continuous-wave GaInNAs/GaAs distributed feedback laser diodes
D. Gollub, M. Fischer, M. Kamp, and A. Forchel
Appl. Phys. Lett. 81, 4330 (2002), DOI: 10.1063/1.1527238

Integration of 2D photonic crystals with ridge waveguide lasers
T. D. Happ, M. Kamp, and A. Forchel
Opt. Quantum Electron. 34, 91 (2002), DOI: 10.1023/A:1013363623795

Single mode lasers based on monolithic integration of ridge waveguides with 2D photonic crystal waveguides
T. D. Happ, M. Kamp, F. Klopf, and A. Forchel
Opt. Quantum Electron. 34, 1137 (2002), DOI: 10.1023/A:1021142028876

Enhanced light emission of InxGa1−xAs quantum dots in a two-dimensional photonic-crystal defect microcavity
T. D. Happ, I. I. Tartakovskii, V. D. Kulakovskii, J. P. Reithmaier, M. Kamp, and A. Forchel
Phys. Rev. B 66 (2002), DOI: 10.1103/PhysRevB.66.041303

Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well
S. Kaiser, T. Mensing, L. Worschech, F. Klopf, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 81, 4898 (2002), DOI: 10.1063/1.1529315

Line narrowing in single semiconductor quantum dots: Toward the control of environment effects
C. Kammerer, C. Voisin, G. Cassabois, C. Delalande, P. Roussignol, F. Klopf, J. P. Reithmaier, A. Forchel, and J.-M. Gerard
Phys. Rev. B 66 (2002), DOI: 10.1103/PhysRevB.66.041306

Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers
F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 81, 217 (2002), DOI: 10.1063/1.1491612

Entangled states of electron–hole complex in a single InAs/GaAs coupled quantum dot molecule
M. Korkusinski, P. Hawrylak, M. Bayer, G. Ortner, A. Forchel, S. Fafard, and Z. R. Wasilewski
Physica E Low Dimens. Syst. Nanostruct. 13, 610 (2002), DOI: 10.1016/S1386-9477(02)00198-4

High Performance 1.3 µm Quantum-Dot Lasers
R. Krebs, F. Klopf, J. P. Reithmaier, and A. Forchel
Jpn. J. Appl. Phys. 41, 1158 (2002), DOI: 10.1143/JJAP.41.1158

Infrared photomodulation spectroscopy of an In 0.22Ga 0.78Sb/GaSb single quantum well
R. Kudrawiec, G. Sęk, K. Ryczko, J. Misiewicz, and A. Forchel
Superlattices Microstruct. 32, 19 (2002), DOI: 10.1006/spmi.2002.1053

Pump-and-Probe Studies of Exciton Polaritons in Semiconductor Microcavities: The Impact of Exciton Localization and Cavity Symmetry
V. D. Kulakovskii, D. N. Krizhanovskii, G. Dasbach, A. A. Dremin, N. A. Gippius, M. Bayer, and A. Forchel
Phys. Status Solidi A 190, 421 (2002), DOI: 10.1002/1521-396X(200204)190:2<421::AID-PSSA421>3.0.CO;2-7

Magnetospectroscopy of InAs/GaAs quantum dots, tunnel-coupled in pairs
A. V. Larionov, V. B. Timofeev, A. Forchel, and M. Bajer
Bull. Russ. Acad. Sci.: Phys. 66, 196 (2002), DOI:

GaAs field effect transistors fabricated by imprint lithography
I. Martini, J. Dechow, M. Kamp, A. Forchel, and J. Koeth
Microelectron. Eng. 60, 451 (2002), DOI: 10.1016/S0167-9317(01)00705-5

Nanofabrication of high quality photonic crystals for integrated optics circuits
J. Moosburger, M. Kamp, A. Forchel, R. Ferrini, D. Leuenberger, R. Houdré, S. Anand, and J. Berggren
Nanotechnology 13, 341 (2002), DOI: 10.1088/0957-4484/13/3/320

Transmission spectroscopy of photonic crystal based waveguides with resonant cavities
J. Moosburger, M. Kamp, A. Forchel, U. Oesterle, and R. Houdré
J. Appl. Phys. 91, 4791 (2002), DOI: 10.1063/1.1454199

Wide range tunable laterally coupled distributed-feedback lasers based on InGaAs-GaAs quantum dots
M. Müller, F. Klopf, M. Kamp, J. P. Reithmaier, and A. Forchel
IEEE Photon. Technol. Lett. 14, 1246 (2002), DOI: 10.1109/LPT.2002.801103

Optical confinement in CdTe-based photonic dots
M. Obert, B. Wild, G. Bacher, A. Forchel, R. André, and D. Le Si Dang
Appl. Phys. Lett. 80, 1322 (2002), DOI: 10.1063/1.1452792

Three-Dimensional Optical Confinement in II-VI Pillar Microcavities
M. Obert, B. Wild, G. Bacher, A. Forchel, R. André, and D. Le Si Dang
Phys. Status Solidi A 190, 357 (2002), DOI: 10.1002/1521-396X(200204)190:2<357::AID-PSSA357>3.0.CO;2-C

Extraction of parameters of surface states from experimental test structures
M. G. Pala, G. Iannaccone, S. Kaiser, A. Schliemann, L. Worschech, and A. Forchel
Nanotechnology 13, 373 (2002), DOI: 10.1088/0957-4484/13/3/326

Quantum dot formation by segregation enhanced CdSe reorganization
T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel
J. Appl. Phys. 92, 6546 (2002), DOI: 10.1063/1.1516248

Influence of Capping Conditions on CdSe/ZnSe Quantum Dot Formation
T. Passow, K. Leonardi, H. Heinke, D. Hommel, J. Seufert, G. Bacher, and A. Forchel
Phys. Status Solidi B 229, 497 (2002), DOI: 10.1002/1521-3951(200201)229:1<497::AID-PSSB497>3.0.CO;2-T

Role of hydrogen in III N V compound semiconductors
A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
Semicond. Sci. Technol. 17, 797 (2002), DOI: 10.1088/0268-1242/17/8/308

Reduced temperature dependence of the band gap in GaAs1−yNy investigated with photoluminescence
A. Polimeni, M. Bissiri, A. Augieri, G. Baldassarri Höger von Högersthal, M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel
Phys. Rev. B 65 (2002), DOI: 10.1103/PhysRevB.65.235325

Excitation Spectroscopy on Single Quantum Dots and Single Pairs of Quantum Dots
M. Rambach, J. Seufert, M. Obert, G. Bacher, A. Forchel, K. Leonardi, T. Passow, and D. Hommel
Phys. Status Solidi B 229, 503 (2002), DOI: 10.1002/1521-3951(200201)229:1<503::AID-PSSB503>3.0.CO;2-3

Single-mode distributed feedback and microlasers based on quantum-dot gain material
J. P. Reithmaier and A. Forchel
IEEE J. Select. Topics Quantum Electron. 8, 1035 (2002), DOI: 10.1109/JSTQE.2002.804233

Logic AND∕NAND gates based on three-terminal ballistic junctions
S. Reitzenstein, L. Worschech, P. Hartmann, and A. Forchel
Electron. Lett. 38, 951 (2002), DOI: 10.1049/el:20020652

Capacitive-coupling-enhanced switching gain in an electron y-branch switch
S. Reitzenstein, L. Worschech, P. Hartmann, M. Kamp, and A. Forchel
Phys. Rev. Lett. 89, 226804 (2002), DOI: 10.1103/PhysRevLett.89.226804

Switching characteristics and demonstration of logic functions in modulation doped GaAs/AlGaAs nanoelectronic devices
S. Reitzenstein, L. Worschech, M. Keßelring, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 13, 954 (2002), DOI: 10.1016/S1386-9477(02)00243-6

Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots
A. Schliemann, L. Worschech, S. Reitzenstein, S. Kaiser, and A. Forchel
Appl. Phys. Lett. 81, 2115 (2002), DOI: 10.1063/1.1507607

Photoluminescence spectroscopy on single CdSe quantum dots in a semimagnetic ZnMnSe matrix
H. Schömig, M. K. Welsch, G. Bacher, A. Forchel, S. Zaitsev, A. A. Maksimov, V. D. Kulakovskii, S. Lee, M. Dobrowolska, and J. K. Furdyna
Physica E Low Dimens. Syst. Nanostruct. 13, 512 (2002), DOI: 10.1016/S1386-9477(02)00182-0

Long-wavelength InP-based quantum-dash lasers
R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel
IEEE Photon. Technol. Lett. 14, 735 (2002), DOI: 10.1109/LPT.2002.1003076

Single-photon emission of CdSe quantum dots at temperatures up to 200 K
K. Sebald, P. Michler, T. Passow, D. Hommel, G. Bacher, and A. Forchel
Appl. Phys. Lett. 81, 2920 (2002), DOI: 10.1063/1.1515364

Photoreflectance spectroscopy of semiconductor device active regions: quantum wells and quantum dots
G. Sęk and J. Misiewicz
Opt. Appl. Vol. 32, 307 (2002), DOI:

Dynamical spin response in semimagnetic quantum dots
J. Seufert, G. Bacher, M. Scheibner, A. Forchel, S. Lee, M. Dobrowolska, and J. K. Furdyna
Phys. Rev. Lett. 88, 27402 (2002), DOI: 10.1103/PhysRevLett.88.027402

Manipulating single quantum dot states in a lateral electric field
J. Seufert, M. Obert, M. Rambach, G. Bacher, A. Forchel, T. Passow, K. Leonardi, and D. Hommel
Physica E Low Dimens. Syst. Nanostruct. 13, 147 (2002), DOI: 10.1016/S1386-9477(01)00507-0

Dynamics of Zero-Dimensional Excitons in a Semimagnetic Environment
J. Seufert, M. Scheibner, G. Bacher, A. Forchel, S. Lee, M. Dobrowolska, and J. K. Furdyna
Phys. Status Solidi B 229, 727 (2002), DOI: 10.1002/1521-3951(200201)229:2<727::AID-PSSB727>3.0.CO;2-7

Quantum optical studies on individual acceptor bound excitons in a semiconductor
S. Strauf, P. Michler, M. Klude, D. Hommel, G. Bacher, and A. Forchel
Phys. Rev. Lett. 89, 177403 (2002), DOI: 10.1103/PhysRevLett.89.177403

Optical investigations of the above barrier state transitions in GaAs/Al0.3Ga0.7As double quantum wells
M. Utko, G. Sęk, K. Ryczko, L. Bryja, J. Misiewicz, M. Bayer, J. Koeth, and A. Forchel
Mater. Sci. Eng. C 19, 167 (2002), DOI: 10.1016/S0928-4931(01)00477-5

Biexciton Binding Energy in ZnSe Quantum Wells and Quantum Wires
H. P. Wagner, H.-P. Tranitz, W. Langbein, J. M. Hvam, G. Bacher, and A. Forchel
Phys. Status Solidi B 231, 11 (2002), DOI: 10.1002/1521-3951(200205)231:1<11::AID-PSSB11>3.0.CO;2-V

Coherent and ballistic switching effects in GaAs/AlGaAs nanojunctions
L. Worschech, S. Reitzenstein, M. Keßelring, A. Schliemann, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 12, 688 (2002), DOI: 10.1016/S1386-9477(01)00378-2

Microwave rectification in ballistic nanojunctions at room temperature
L. Worschech, A. Schliemann, S. Reitzenstein, P. Hartmann, and A. Forchel
Microelectron. Eng. 63, 217 (2002), DOI: 10.1016/S0167-9317(02)00604-4

Near-field mapping of the electromagnetic field in confined photon geometries
V. Zhuk, D. V. Regelman, D. Gershoni, M. Bayer, J. P. Reithmaier, A. Forchel, P. A. Knipp, and T. L. Reinecke
Phys. Rev. B 66 (2002), DOI: 10.1103/PhysRevB.66.115302

Efficient light transmission through InP-based photonic crystal waveguides
J. Zimmermann, M. Kamp, R. Schwertberger, J. P. Reithmaier, A. Forchel, and R. März
Electron. Lett. 38, 178 (2002), DOI: 10.1049/el:20020120

Nach oben

Reactive ion etching of deeply etched DBR-structures with reduced air-gaps for highly reflective monolithically integrated laser mirrors
K. Avary, S. Rennon, F. Klopf, J. P. Reithmaier, and A. Forchel
Microelectron. Eng. 57-58, 593 (2001), DOI: 10.1016/S0167-9317(01)00491-9

Biexcitons in InxGa1−xAs/GaAs quantum wells subject to high magnetic fields
T. Baars, M. Bayer, A. A. Gorbunov, and A. Forchel
Phys. Rev. B 63 (2001), DOI: 10.1103/PhysRevB.63.153312

Biexciton states in semiconductor microcavities
T. Baars, G. Dasbach, M. Bayer, and A. Forchel
Phys. Rev. B 63 (2001), DOI: 10.1103/PhysRevB.63.165311

Multiwavelength laterally complex coupled distributed feedback laser arrays with monolithically integrated combiner fabricated by focused-ion-beam lithography
L. Bach, J. P. Reithmaier, A. Forchel, J.-L. Gentner, and L. Goldstein
Appl. Phys. Lett. 79, 2324 (2001), DOI: 10.1063/1.1392977

Optical Spectroscopy on Single Semimagnetic Quantum Dots ? Probing the Interaction between an Exciton and Its Magnetic Environment
G. Bacher, A. A. Maksimov, A. McDonald, H. Schmig, M. K. Welsch, V. D. Kulakovskii, A. Forchel, C. R. Becker, L. W. Molenkamp, and G. Landwehr
Phys. Status Solidi B 224, 573 (2001), DOI: 10.1002/1521-3951(200103)224:2<573::AID-PSSB573>3.0.CO;2-F

Optical spectroscopy on individual CdSe/ZnMnSe quantum dots
G. Bacher, H. Schömig, M. K. Welsch, S. Zaitsev, V. D. Kulakovskii, A. Forchel, S. Lee, M. Dobrowolska, J. K. Furdyna, B. König, and W. Ossau
Appl. Phys. Lett. 79, 524 (2001), DOI: 10.1063/1.1387256

Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells
G. Baldassarri Höger von Högersthal, M. Bissiri, A. Polimeni, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel
Appl. Phys. Lett. 78, 3472 (2001), DOI: 10.1063/1.1376436

Hydrogen Tuning of (InGa)(AsN) Optical Properties
G. Baldassarri Höger von Högersthal, F. Ranalli, M. Bissiri, V. Gaspari, A. Polimeni, M. Capizzi, A. Nucara, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Acta Phys. Pol. A 100, 373 (2001), DOI: 10.12693/APhysPolA.100.373

Excitonic States in In(Ga)As Self-Assembled Quantum Dots
M. Bayer, A. Forchel, P. Hawrylak, S. Fafard, and G. A. Narvaez
Phys. Status Solidi B 224, 331 (2001), DOI: 10.1002/1521-3951(200103)224:2<331::AID-PSSB331>3.0.CO;2-A

Coupling and entangling of quantum states in quantum dot molecules
M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, and A. Forchel
Science 291, 451 (2001), DOI: 10.1126/science.291.5503.451

Control of light polarization in structured cavities by a magnetic field
M. Bayer, A. Kuther, V. D. Kulakovskii, A. Forchel, P. A. Knipp, and T. L. Reinecke
Phys. Rev. B 64 (2001), DOI: 10.1103/PhysRevB.64.201307

Inhibition and enhancement of the spontaneous emission of quantum dots in structured microresonators
M. Bayer, T. L. Reinecke, F. Weidner, A. V. Larionov, A. McDonald, and A. Forchel
Phys. Rev. Lett. 86, 3168 (2001), DOI: 10.1103/PhysRevLett.86.3168

Effect of hydrogen on the electronic properties of GaAs{sub 1-y}N{sub y} heterostructures[thin films]
M. Bissiri, V. Gaspari, and G. Baldassarri Höger von Högersthal
Acta Phys. Pol. A 100 (2001), DOI:

High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells
M. Bissiri, V. Gaspari, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
Appl. Phys. Lett. 79, 2585 (2001), DOI: 10.1063/1.1409333

2-μm GaInSb-AlGaAsSb distributed-feedback lasers
T. Bleuel, M. Müller, and A. Forchel
IEEE Photon. Technol. Lett. 13, 553 (2001), DOI: 10.1109/68.924017

Parametric polariton scattering in microresonators with three-dimensional optical confinement
G. Dasbach, M. Schwab, M. Bayer, and A. Forchel
Phys. Rev. B 64 (2001), DOI: 10.1103/PhysRevB.64.201309

Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-μm range
M. O. Fischer, M. Reinhardt, and A. Forchel
IEEE J. Select. Topics Quantum Electron. 7, 149 (2001), DOI: 10.1109/2944.954123

Short cavity InP-lasers with 2D photonic crystal mirrors
J.-L. Gentner, A. Markard, M. Kamp, T. D. Happ, and A. Forchel
IEE Proc., Optoelectron. 148, 183 (2001), DOI: 10.1049/ip-opt:20010575

Strain analysis and quantum well intermixing of a laterally modulated multiquantum well system produced by focused ion beam implantation
J. Grenzer, N. Darowski, T. Geue, U. Pietsch, A. Daniel, S. Rennon, J. P. Reithmaier, and A. Forchel
J. Phys. D: Appl. Phys. 34, A11-A14 (2001), DOI: 10.1088/0022-3727/34/10A/303

Isomeric photonic molecules formed from coupled microresonators
G. Guttroff, M. Bayer, A. Forchel, P. A. Knipp, and T. L. Reinecke
Phys. Rev. E Stat. Nonlin. Soft Matter Phys. 63, 36611 (2001), DOI: 10.1103/PhysRevE.63.036611

Photonic defect states in chains of coupled microresonators
G. Guttroff, M. Bayer, J. P. Reithmaier, A. Forchel, P. A. Knipp, and T. L. Reinecke
Phys. Rev. B 64 (2001), DOI: 10.1103/PhysRevB.64.155313

Photonic crystal tapers for ultracompact mode conversion
T. D. Happ, M. Kamp, and A. Forchel
Opt. Lett., OL 26, 1102 (2001), DOI: 10.1364/ol.26.001102

Two-dimensional photonic crystal laser mirrors
T. D. Happ, M. Kamp, F. Klopf, J. P. Reithmaier, and A. Forchel
Semicond. Sci. Technol. 16, 227 (2001), DOI: 10.1088/0268-1242/16/4/307

Single-mode operation of coupled-cavity lasers based on two-dimensional photonic crystals
T. D. Happ, A. Markard, M. Kamp, A. Forchel, and S. Anand
Appl. Phys. Lett. 79, 4091 (2001), DOI: 10.1063/1.1427158

Nanofabrication of two-dimensional photonic crystal mirrors for 1.5 μm short cavity lasers
T. D. Happ, A. Markard, M. Kamp, A. Forchel, S. Anand, J.-L. Gentner, and N. Bouadma
J. Vac. Sci. Technol. B 19, 2775 (2001), DOI: 10.1116/1.1412898

InP-based short cavity lasers with 2D photonic crystal mirror
T. D. Happ, A. Markard, M. Kamp, J.-L. Gentner, and A. Forchel
Electron. Lett. 37, 428 (2001), DOI: 10.1049/el:20010317

Optical Spectroscopy of Electronic States in a Single Pair of Vertically Coupled Self-Assembled Quantum Dots
K. Hinzer, M. Bayer, J. P. McCaffrey, P. Hawrylak, M. Korkusinski, O. Stern, Z. R. Wasilewski, S. Fafard, and A. Forchel
Phys. Status Solidi B 224, 385 (2001), DOI: 10.1002/1521-3951(200103)224:2<385::AID-PSSB385>3.0.CO;2-B

Optical spectroscopy of a single Al0.36In0.64As/Al0.33Ga0.67As quantum dot
K. Hinzer, P. Hawrylak, M. Korkusinski, S. Fafard, M. Bayer, O. Stern, A. Gorbunov, and A. Forchel
Phys. Rev. B 63 (2001), DOI: 10.1103/PhysRevB.63.075314

Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors
M. Kamp, J. Hofmann, A. Forchel, and S. Lourdudoss
Appl. Phys. Lett. 78, 4074 (2001), DOI: 10.1063/1.1377623

Lateral coupling – a material independent way to complex coupled DFB lasers
M. Kamp, J. Hofmann, F. Schäfer, M. Reinhard, M. Fischer, T. Bleuel, J. P. Reithmaier, and A. Forchel
Opt. Mater. 17, 19 (2001), DOI: 10.1016/S0925-3467(01)00014-3

High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications
F. Klopf, R. Krebs, J. P. Reithmaier, and A. Forchel
IEEE Photon. Technol. Lett. 13, 764 (2001), DOI: 10.1109/68.935796

InAs/GaInAs quantum dot DFB lasers emitting at 1.3 [micro sign]m
F. Klopf, R. Krebs, A. Wolf, M. Emmerling, J. P. Reithmaier, and A. Forchel
Electron. Lett. 37, 634 (2001), DOI: 10.1049/el:20010420

980 nm Quantum Dot Lasers with Very Small Threshold Current Densities
F. Klopf, J. P. Reithmaier, and A. Forchel
Phys. Status Solidi B 224, 845 (2001), DOI: 10.1002/(SICI)1521-3951(200104)224:3<845::AID-PSSB845>3.0.CO;2-5

Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasers emitting at 980nm
F. Klopf, J. P. Reithmaier, and A. Forchel
J. Cryst. Growth 227-228, 1151 (2001), DOI: 10.1016/S0022-0248(01)01005-3

Zeeman spin splittings in semiconductor nanostructures
R. Kotlyar, T. L. Reinecke, M. Bayer, and A. Forchel
Phys. Rev. B 63 (2001), DOI: 10.1103/PhysRevB.63.085310

High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 [micro sign]m
R. Krebs, F. Klopf, S. Rennon, J. P. Reithmaier, and A. Forchel
Electron. Lett. 37, 1223 (2001), DOI: 10.1049/el:20010841

Impact of exciton localization on the optical non-linearities of cavity polaritons
D. N. Krizhanovskii, G. Dasbach, A. A. Dremin, V. D. Kulakovskii, N. A. Gippius, M. Bayer, and A. Forchel
Solid State Commun. 119, 435 (2001), DOI: 10.1016/S0038-1098(01)00266-6

Selective ultrahigh vacuum dry etching process for ZnSe-based II–VI semiconductors
M. Legge, G. Bacher, S. Bader, T. Kümmell, A. Forchel, J. Nürnberger, C. Schumacher, W. Faschinger, and G. Landwehr
J. Vac. Sci. Technol. B 19, 692 (2001), DOI: 10.1116/1.1372923

Single Electron Transistor Fabricated on Heavily Doped Silicon-on-Insulator Substrate
A. Manninen, J. Kauranen, J. Pekola, A. Savin, M. Kamp, M. Emmerling, A. Forchel, M. Prunnila, and J. Ahopelto
Jpn. J. Appl. Phys. 40, 2013 (2001), DOI: 10.1143/JJAP.40.2013

Fabrication of quantum point contacts and quantum dots by imprint lithography
I. Martini, M. Kamp, F. Fischer, L. Worschech, J. Koeth, and A. Forchel
Microelectron. Eng. 57-58, 397 (2001), DOI: 10.1016/S0167-9317(01)00446-4

Tertiarybutylarsine (TBAs) and -phosphine (TBP) as group V-precursors for gas source molecular beam epitaxy for optoelectronic applications
B. Mayer, J. P. Reithmaier, and A. Forchel
J. Cryst. Growth 227-228, 298 (2001), DOI: 10.1016/S0022-0248(01)00709-6

Fabrication of semiconductor lasers with 2D-photonic crystal mirrors using a wet oxidized Al2O3-mask
J. Moosburger, M. Kamp, F. Klopf, M. Fischer, and A. Forchel
Microelectron. Eng. 57-58, 1017 (2001), DOI: 10.1016/S0167-9317(01)00433-6

Semiconductor lasers with 2-D-photonic crystal mirrors based on a wet-oxidized Al 2 O 3 -mask
J. Moosburger, M. Kamp, F. Klopf, J. P. Reithmaier, and A. Forchel
IEEE Photon. Technol. Lett. 13, 406 (2001), DOI: 10.1109/68.920732

Enhanced transmission through photonic-crystal-based bent waveguides by bend engineering
J. Moosburger, M. Kamp, A. Forchel, S. Olivier, H. Benisty, C. Weisbuch, and U. Oesterle
Appl. Phys. Lett. 79, 3579 (2001), DOI: 10.1063/1.1421087

Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP–InP
M. Müller, M. Kamp, A. Forchel, and J.-L. Gentner
Appl. Phys. Lett. 79, 2684 (2001), DOI: 10.1063/1.1404397

Effect of hydrogen on the electronic properties of InxGa1−xAs1−yNy/GaAs quantum wells
A. Polimeni, G. Baldassarri Höger von Högersthal, H. M. Bissiri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel
Phys. Rev. B 63 (2001), DOI: 10.1103/PhysRevB.63.201304

Interplay of nitrogen and hydrogen in InxGa1−xAs1−yNy/GaAs heterostructures
A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, V. Gaspari, F. Ranalli, M. Capizzi, A. Frova, A. Miriametro, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Phys. B: Condens. Matter 308-310, 850 (2001), DOI: 10.1016/S0921-4526(01)00911-5

Photon band gap systems from semiconductor microcavities
T. L. Reinecke, P. A. Knipp, S. Rudin, M. Bayer, J. P. Reithmaier, and A. Forchel
Synth. Met. 116, 457 (2001), DOI: 10.1016/S0379-6779(00)00414-8

Edge-emitting microlasers with one active layer of quantum dots
S. Rennon, K. Avary, F. Klopf, J. P. Reithmaier, and A. Forchel
IEEE J. Select. Topics Quantum Electron. 7, 300 (2001), DOI: 10.1109/2944.954143

Nanoscale patterning by focused ion beam enhanced etching for optoelectronic device fabrication
S. Rennon, L. Bach, H. König, J. P. Reithmaier, A. Forchel, J.-L. Gentner, and L. Goldstein
Microelectron. Eng. 57-58, 891 (2001), DOI: 10.1016/S0167-9317(01)00451-8

Complex coupled distributed-feedback and Bragg-reflector lasers for monolithic device integration based on focused-ion-beam technology
S. Rennon, L. Bach, J. P. Reithmaier, and A. Forchel
IEEE J. Select. Topics Quantum Electron. 7, 306 (2001), DOI: 10.1109/2944.954144

12 [micro sign]m long edge-emitting quantum-dot laser
S. Rennon, F. Klopf, J. P. Reithmaier, and A. Forchel
Electron. Lett. 37, 690 (2001), DOI: 10.1049/el:20010488

Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots
G. Sęk, K. Ryczko, J. Misiewicz, M. Bayer, F. Klopf, J. P. Reithmaier, and A. Forchel
Solid State Commun. 117, 401 (2001), DOI: 10.1016/S0038-1098(00)00490-7

Influence of Built-in Electric Field on Forbidden Transitions in In x Ga 1-x As/GaAs Double Quantum Well by Three-Beam Photoreflectance
G. Sęk, K. Ryczko, J. Misiewicz, M. Bayer, T. Wang, and A. Forchel
Acta Phys. Pol. A 100, 417 (2001), DOI: 10.12693/APhysPolA.100.417

Photoreflectance spectroscopy of InGaAsN/GaAs quantum wells grown by MBE
G. Sęk, K. Ryczko, J. Misiewicz, M. Fischer, M. Reinhardt, and A. Forchel
Thin Solid Films 392, 150 (2001), DOI: 10.1016/S0040-6090(01)01003-3

Tunneling of zero-dimensional excitons in a single pair of correlated quantum dots
J. Seufert, M. Obert, G. Bacher, A. Forchel, T. Passow, K. Leonardi, and D. Hommel
Phys. Rev. B 64 (2001), DOI: 10.1103/PhysRevB.64.121303

Stark effect and polarizability in a single CdSe/ZnSe quantum dot
J. Seufert, M. Obert, M. Scheibner, N. A. Gippius, G. Bacher, A. Forchel, T. Passow, K. Leonardi, and D. Hommel
Appl. Phys. Lett. 79, 1033 (2001), DOI: 10.1063/1.1389504

Correlated Temporal Fluctuations and Random Intermittency of Optical Transitions in a Single Quantum Dot
J. Seufert, M. Obert, R. Weigand, T. Kmmell, G. Bacher, A. Forchel, K. Leonardi, and D. Hommel
Phys. Status Solidi B 224, 201 (2001), DOI: 10.1002/1521-3951(200103)224:1<201::AID-PSSB201>3.0.CO;2-R

2 W reliable operation of = 735 nm GaAsP/AlGaAs laser diodes
B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, and G. Tränkle
Electron. Lett. 37, 351 (2001), DOI: 10.1049/el:20010266

Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy
Y. T. Sun, E. Rodrı́guez Messmer, S. Lourdudoss, J. Ahopelto, S. Rennon, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 79, 1885 (2001), DOI: 10.1063/1.1401781

X-ray diffraction and reflectivity analysis of GaAs/InGaAs free-standing trapezoidal quantum wires
A. Ulyanenkov, K. Inaba, P. Mikulík, N. Darowski, K. Omote, U. Pietsch, J. Grenzer, and A. Forchel
J. Phys. D: Appl. Phys. 34, A179-A182 (2001), DOI: 10.1088/0022-3727/34/10a/337

Biexciton binding energy and exciton–LO-phonon scattering in ZnSe quantum wires
H. P. Wagner, H.-P. Tranitz, R. Schuster, G. Bacher, and A. Forchel
Phys. Rev. B 63 (2001), DOI: 10.1103/PhysRevB.63.155311

Selective thermal interdiffusion using patterned SiO2 masks: An alternative approach to buried CdTe/CdMgTe quantum wires
M. K. Welsch, H. Schömig, M. Legge, G. Bacher, A. Forchel, B. König, C. R. Becker, W. Ossau, and L. W. Molenkamp
Appl. Phys. Lett. 78, 2937 (2001), DOI: 10.1063/1.1360226

1D-0D-1D Transitions in GaAs/AlGaAs Electron Waveguides Coupled by a Semiconducting Island
L. Worschech, S. Reitzenstein, and A. Forchel
Phys. Status Solidi B 224, 863 (2001), DOI: 10.1002/(SICI)1521-3951(200104)224:3<863::AID-PSSB863>3.0.CO;2-5

Investigation of switching effects between the drains of an electron Y-branch switch
L. Worschech, B. Weidner, S. Reitzenstein, and A. Forchel
Appl. Phys. Lett. 78, 3325 (2001), DOI: 10.1063/1.1372341

Bias-voltage-induced asymmetry in nanoelectronic Y -branches
L. Worschech, H. Q. Xu, A. Forchel, and L. Samuelson
Appl. Phys. Lett. 79, 3287 (2001), DOI: 10.1063/1.1419040

Buried CdTe/CdMgTe single quantum dotsusing selective thermal interdiffusion
S. Zaitsev, M. K. Welsch, H. Schömig, G. Bacher, V. D. Kulakovskii, A. Forchel, B. König, C. R. Becker, W. Ossau, and L. W. Molenkamp
Semicond. Sci. Technol. 16, 631 (2001), DOI: 10.1088/0268-1242/16/7/318

Nach oben

Carrier and light trapping in graded quantum-well laser structures
G. Aichmayr, M. D. Martín, H. P. van der Meulen, C. Pascual, L. Viña, J. M. Calleja, F. Schäfer, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 76, 3540 (2000), DOI: 10.1063/1.126700

Optical generation and sideband injection locking of tunable 11–120 GHz microwave/millimetre signals
M. Al-Mumin, X. Wang, W. Mao, S. A. Pappert, and G. Li
Electron. Lett. 36, 1547 (2000), DOI: 10.1049/el:20001090

Polariton-polariton scattering in semiconductor microcavities: Experimental observation of thresholdlike density dependence
T. Baars, M. Bayer, A. Forchel, F. Schäfer, and J. P. Reithmaier
Phys. Rev. B 61, R2409-R2412 (2000), DOI: 10.1103/PhysRevB.61.R2409

Dynamics of Excitons and Biexcitons in One Single Quantum Dot
G. Bacher, R. Weigand, J. Seufert, N. A. Gippius, V. D. Kulakovskii, A. Forchel, K. Leonardi, and D. Hommel
Phys. Status Solidi B 221, 25 (2000), DOI: 10.1002/1521-3951(200009)221:1<25::AID-PSSB25>3.0.CO;2-6

Optical Spectroscopy on Buried CdTe/Cd(Mn,Mg)Te Single Quantum Dots
G. Bacher, M. K. Welsch, A. McDonald, T. Kümmell, A. Forchel, B. König, C. Becher, W. Ossau, and G. Landwehr
Phys. Status Solidi A 178, 359 (2000), DOI: 10.1002/1521-396X(200003)178:1<359::AID-PSSA359>3.0.CO;2-6

Confined Optical Modes in Photonic Dots and Molecules
M. Bayer, T. Gutbrod, A. Forchel, P. A. Knipp, and T. L. Reinecke
Phys. Status Solidi A 178, 545 (2000), DOI: 10.1002/1521-396X(200003)178:1<545::AID-PSSA545>3.0.CO;2-I

Effects of Confinement Potential Asymmetries on the Fine Structure of Excitons in Self-Assembled In0.60Ga0.40As Quantum Dots
M. Bayer, A. Kuther, A. Forchel, and T. L. Reinecke
Phys. Status Solidi A 178, 297 (2000), DOI: 10.1002/1521-396X(200003)178:1<297::AID-PSSA297>3.0.CO;2-2

Fine structure of excitons in self-assembled In0.60Ga0.40As quantum dots: Zeeman-interaction and exchange energy enhancement
M. Bayer, A. Kuther, A. Forchel, T. L. Reinecke, and S. N. Walck
Physica E Low Dimens. Syst. Nanostruct. 7, 475 (2000), DOI: 10.1016/S1386-9477(99)00363-X

Hidden symmetries in the energy levels of excitonic 'artificial atoms'
M. Bayer, O. Stern, P. Hawrylak, S. Fafard, and A. Forchel
Nature 405, 923 (2000), DOI: 10.1038/35016020

Spectroscopic study of dark excitons in InxGa1−xAs self-assembled quantum dots by a magnetic-field-induced symmetry breaking
M. Bayer, O. Stern, A. Kuther, and A. Forchel
Phys. Rev. B 61, 7273 (2000), DOI: 10.1103/PhysRevB.61.7273

Quantized conductance in extended electron waveguides fabricated on shallow etched modulation-doped GaAs/AlGaAs heterostructures
F. Beuscher, L. Worschech, B. Weidner, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 7, 772 (2000), DOI: 10.1016/S1386-9477(00)00055-2

Excited states of two-dimensional hole gas at the Al0.5Ga0.5As/GaAs interface
L. Bryja, O. Stern, M. Kubisa, K. Ryczko, M. Bayer, J. Misiewicz, A. Forchel, and O. P. Hansen
Thin Solid Films 380, 142 (2000), DOI: 10.1016/S0040-6090(00)01489-9

Biexcitons in Semiconductor Microcavities
G. Dasbach, T. Baars, M. Bayer, and A. Forchel
Phys. Status Solidi B 221, 319 (2000), DOI: 10.1002/1521-3951(200009)221:1<319::AID-PSSB319>3.0.CO;2-M

Coherent and incoherent polaritonic gain in a planar semiconductor microcavity
G. Dasbach, T. Baars, M. Bayer, A. V. Larionov, and A. Forchel
Phys. Rev. B 62, 13076 (2000), DOI: 10.1103/PhysRevB.62.13076

Fabrication of NMR — Microsensors for nanoliter sample volumes
J. Dechow, A. Forchel, T. Lanz, and A. Haase
Microelectron. Eng. 53, 517 (2000), DOI: 10.1016/S0167-9317(00)00368-3

A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-μm regime
M. Fischer, M. Reinhardt, and A. Forchel
IEEE Photon. Technol. Lett. 12, 1313 (2000), DOI: 10.1109/68.883814

GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
M. Fischer, M. Reinhardt, and A. Forchel
Electron. Lett. 36, 1208 (2000), DOI: 10.1049/el:20000870

Semiconductor photonic molecules
A. Forchel, M. Bayer, J. P. Reithmaier, T. L. Reinecke, and V. D. Kulakovskii
Physica E Low Dimens. Syst. Nanostruct. 7, 616 (2000), DOI: 10.1016/S1386-9477(99)00396-3

Photon confinement effects — from physics to applications
A. Forchel, M. Kamp, T. D. Happ, J. P. Reithmaier, M. Bayer, J. Koeth, and R. Dietrich
Microelectron. Eng. 53, 21 (2000), DOI: 10.1016/S0167-9317(00)00261-6

Grazing-incidence diffraction strain analysis of a laterally-modulated multiquantum well system produced by focused-ion-beam implantation
J. Grenzer, N. Darowski, U. Pietsch, A. Daniel, S. Rennon, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 77, 4277 (2000), DOI: 10.1063/1.1332410

Bent laser cavity based on 2D photonic crystal waveguide
T. D. Happ, M. Kamp, F. Klopf, J. P. Reithmaier, and A. Forchel
Electron. Lett. 36, 324 (2000), DOI: 10.1049/el:20000333

Excitonic absorption in a quantum Dot
P. Hawrylak, G. A. Narvaez, M. Bayer, and A. Forchel
Phys. Rev. Lett. 85, 389 (2000), DOI: 10.1103/physrevlett.85.389

Be-enhanced CdSe island formation in CdSe/ZnSe heterostructures
M. Keim, M. Korn, J. Seufert, G. Bacher, A. Forchel, G. Landwehr, S. Ivanov, S. Sorokin, A. A. Sitnikova, T. V. Shubina, A. Toropov, and A. Waag
J. Appl. Phys. 88, 7051 (2000), DOI: 10.1063/1.1328784

Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
F. Klopf, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 77, 1419 (2000), DOI: 10.1063/1.1290601

Bias and temperature dependence of the 0.7 conductance anomaly in quantum point contacts
A. Kristensen, H. Bruus, A. E. Hansen, J. B. Jensen, P. E. Lindelof, C. J. Marckmann, J. Nygård, C. B. Sørensen, F. Beuscher, A. Forchel, and M. Michel
Phys. Rev. B 62, 10950 (2000), DOI: 10.1103/PhysRevB.62.10950

Optical Spectroscopy on One and Two Exciton States in ZnSe-Based Single Quantum Dots
V. D. Kulakovskii, R. Weigand, G. Bacher, J. Seufert, T. Kümmell, A. Forchel, K. Leonardi, and D. Hommel
Phys. Status Solidi A 178, 323 (2000), DOI: 10.1002/1521-396X(200003)178:1<323::AID-PSSA323>3.0.CO;2-5

Semimagnetic (Cd,Mn)Te single quantum dots — technological access and optical spectroscopy
T. Kümmell, G. Bacher, M. K. Welsch, D. Eisert, A. Forchel, B. König, C. Becher, W. Ossau, and G. Landwehr
J. Cryst. Growth 214-215, 150 (2000), DOI: 10.1016/S0022-0248(00)00052-X

Strongly index-guided II-VI laser diodes
M. Legge, G. Bacher, S. Bader, A. Forchel, H. J. Lugauer, A. Waag, and G. Landwehr
IEEE Photon. Technol. Lett. 12, 236 (2000), DOI: 10.1109/68.826899

Low threshold II–VI laser diodes with transversal and longitudinal single-mode emission
M. Legge, G. Bacher, A. Forchel, M. Klude, M. Fehrer, and D. Hommel
J. Cryst. Growth 214-215, 1045 (2000), DOI: 10.1016/S0022-0248(00)00271-2

Magnetic polarons in a single diluted magnetic semiconductor quantum dot
A. A. Maksimov, G. Bacher, A. McDonald, V. D. Kulakovskii, A. Forchel, C. R. Becker, G. Landwehr, and L. W. Molenkamp
Phys. Rev. B 62, R7767-R7770 (2000), DOI: 10.1103/PhysRevB.62.R7767

Hydrogen-plasma-enhanced oxygen precipitation in silicon
V. P. Markevich, L. I. Murin, J. L. Lindström, A. G. Ulyashin, R. Job, W. R. Fahrner, and V. Raiko
J. Phys.: Condens. Matter 12, 10145 (2000), DOI: 10.1088/0953-8984/12/49/313

Quantum point contacts fabricated by nanoimprint lithography
I. Martini, D. Eisert, M. Kamp, L. Worschech, A. Forchel, and J. Koeth
Appl. Phys. Lett. 77, 2237 (2000), DOI: 10.1063/1.1315343

Fabrication of quantum point contacts by imprint lithography and transport studies
I. Martini, S. Kuhn, M. Kamp, L. Worschech, A. Forchel, D. Eisert, J. Koeth, and R. Sijbesma
J. Vac. Sci. Technol. B 18, 3561 (2000), DOI: 10.1116/1.1319705

Nanofabrication techniques for lasers with two-dimensional photonic crystal mirrors
J. Moosburger, T. D. Happ, M. Kamp, and A. Forchel
J. Vac. Sci. Technol. B 18, 3501 (2000), DOI: 10.1116/1.1319826

Analysis of the strain distribution in lateral nanostructures for interpreting photoluminescence data
U. Pietsch, N. Darowski, A. Ulyanenkov, J. Grenzer, K. H. Wang, and A. Forchel
Phys. B: Condens. Matter 283, 92 (2000), DOI: 10.1016/S0921-4526(99)01898-0

Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Appl. Phys. Lett. 77, 2870 (2000), DOI: 10.1063/1.1320849

Silicon quantum point contact with aluminum gate
M. Prunnila, S. Eränen, J. Ahopelto, A. Manninen, M. Kamp, M. Emmerling, A. Forchel, A. Kristensen, C. B. Sørensen, P. E. Lindelof, and A. Gustafsson
Mater. Sci. Eng. B 74, 193 (2000), DOI: 10.1016/S0921-5107(99)00560-7

ECR-MBE growth and patterning of GaInNAs/GaAs quantum wells for 1st order DFB lasers
M. Reinhardt, M. Fischer, and A. Forchel
Physica E Low Dimens. Syst. Nanostruct. 7, 919 (2000), DOI: 10.1016/S1386-9477(00)00088-6

7.8 GHz small-signal modulation bandwidth of 1.3 [micro sign]m DQW GaInAsN/GaAs laser diodes
M. Reinhardt, M. Fischer, M. Kamp, and A. Forchel
Electron. Lett. 36, 1025 (2000), DOI: 10.1049/el:20000793

1.3-μm GaInNAs-AlGaAs distributed feedback lasers
M. Reinhardt, M. Fischer, M. Kamp, J. Hofmann, and A. Forchel
IEEE Photon. Technol. Lett. 12, 239 (2000), DOI: 10.1109/68.826900

High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography
S. Rennon, L. Bach, J. P. Reithmaier, A. Forchel, J.-L. Gentner, and L. Goldstein
Appl. Phys. Lett. 77, 325 (2000), DOI: 10.1063/1.126965

Raman investigation of CdxZn1−xSe/ZnSe quantum wires: length dependence of the strain relaxation
B. Schreder, T. Kümmell, G. Bacher, A. Forchel, G. Landwehr, A. Materny, and W. Kiefer
J. Cryst. Growth 214-215, 787 (2000), DOI: 10.1016/S0022-0248(00)00233-5

Resonance Raman spectroscopy and excitation profile of CdxZn1−xSe/ZnSe quantum wires
B. Schreder, T. Kümmell, G. Bacher, A. Forchel, G. Landwehr, A. Materny, and W. Kiefer
J. Cryst. Growth 214-215, 792 (2000), DOI: 10.1016/S0022-0248(00)00234-7

Resonance Raman spectroscopy on strain relaxed CdZnSe/ZnSe quantum wires
B. Schreder, A. Materny, W. Kiefer, G. Bacher, A. Forchel, and G. Landwehr
J. Raman Spectrosc. 31, 959 (2000), DOI: 10.1002/1097-4555(200011)31:11<959::AID-JRS613>3.0.CO;2-I

Length dependence of the longitudinal optical phonon properties in CdZnSe/ZnSe quantum wires
B. Schreder, A. Materny, W. Kiefer, T. Kümmell, G. Bacher, A. Forchel, and G. Landwehr
Solid State Commun. 114, 435 (2000), DOI: 10.1016/S0038-1098(00)00077-6

Raman investigation of CdxZn1−xSe/ZnSe quantum wires: Strain relaxation and excitation profile
B. Schreder, A. Materny, W. Kiefer, T. Kümmell, G. Bacher, A. Forchel, and G. Landwehr
J. Appl. Phys. 88, 764 (2000), DOI: 10.1063/1.373735

Photoreflectance spectroscopy of coupled In Ga1−As/GaAs quantum wells
G. Sęk, K. Ryczko, M. Kubisa, J. Misiewicz, M. Bayer, T. Wang, J. Koeth, and A. Forchel
Thin Solid Films 364, 220 (2000), DOI: 10.1016/S0040-6090(99)00923-2

Be-induced island formation in CdSe/ZnSe heterostructures: Ensemble versus single dot studies
J. Seufert, M. Rambach, G. Bacher, A. Forchel, M. Keim, S. Ivanov, A. Waag, and G. Landwehr
Phys. Rev. B 62, 12609 (2000), DOI: 10.1103/PhysRevB.62.12609

Spectral diffusion of the exciton transition in a single self-organized quantum dot
J. Seufert, R. Weigand, G. Bacher, T. Kümmell, A. Forchel, K. Leonardi, and D. Hommel
Appl. Phys. Lett. 76, 1872 (2000), DOI: 10.1063/1.126196

MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature
K. Tachibana, T. Someya, R. Werner, A. Forchel, and Y. Arakawa
Physica E Low Dimens. Syst. Nanostruct. 7, 944 (2000), DOI: 10.1016/S1386-9477(00)00093-X

Magneto-optical study of excitonic states in In0.045Ga0.955As/GaAs multiple coupled quantum wells
T. Wang, M. Bayer, A. Forchel, N. A. Gippius, and V. D. Kulakovskii
Phys. Rev. B 62, 7433 (2000), DOI: 10.1103/PhysRevB.62.7433

Eigenstate symmetry probed by biexciton transitions in a single quantum dot
R. Weigand, G. Bacher, V. D. Kulakovskii, J. Seufert, T. Kümmell, A. Forchel, K. Leonardi, and D. Hommel
Physica E Low Dimens. Syst. Nanostruct. 7, 350 (2000), DOI: 10.1016/S1386-9477(99)00339-2

Spin and exchange effects in CdSe/ZnSe quantum dots probed by single-dot spectroscopy
R. Weigand, J. Seufert, G. Bacher, V. D. Kulakovskii, T. Kümmell, A. Forchel, K. Leonardi, and D. Hommel
J. Cryst. Growth 214-215, 737 (2000), DOI: 10.1016/S0022-0248(00)00190-1

InGaAsSb-AlGaAsSb distributed-feedback lasers emitting at 1.72 μm
R. Werner, T. Bleuel, J. Hofmann, M. Brockhaus, and A. Forchel
IEEE Photon. Technol. Lett. 12, 966 (2000), DOI: 10.1109/68.867976

High-resolution patterning and characterization of optically pumped first-order GaN DFB lasers
R. Werner, M. Reinhardt, M. Emmerling, A. Forchel, V. Härle, and A. V. Bazhenov
Physica E Low Dimens. Syst. Nanostruct. 7, 915 (2000), DOI: 10.1016/S1386-9477(00)00087-4

Negative differential conductance in planar one-dimensional/zero-dimensional/one-dimensional GaAs/AlGaAs structures
L. Worschech, S. Reitzenstein, and A. Forchel
Appl. Phys. Lett. 77, 3662 (2000), DOI: 10.1063/1.1329637

Nach oben

Buried single CdTe/CdMnTe quantum dots realized by focused ion beam lithography
G. Bacher, T. Kümmell, D. Eisert, A. Forchel, B. König, W. Ossau, C. R. Becker, and G. Landwehr
Appl. Phys. Lett. 75, 956 (1999), DOI: 10.1063/1.124565

Biexciton versus Exciton Lifetime in a Single Semiconductor Quantum Dot
G. Bacher, R. Weigand, J. Seufert, V. D. Kulakovskii, N. A. Gippius, A. Forchel, K. Leonardi, and D. Hommel
Phys. Rev. Lett. 83, 4417 (1999), DOI: 10.1103/PhysRevLett.83.4417

Optical Demonstration of a Crystal Band Structure Formation
M. Bayer, T. Gutbrod, A. Forchel, T. L. Reinecke, P. A. Knipp, R. Werner, and J. P. Reithmaier
Phys. Rev. Lett. 83, 5374 (1999), DOI: 10.1103/PhysRevLett.83.5374

Electron and Hole g Factors and Exchange Interaction from Studies of the Exciton Fine Structure in In0.60Ga0.40As Quantum Dots
M. Bayer, A. Kuther, A. Forchel, A. Gorbunov, V. B. Timofeev, F. Schäfer, J. P. Reithmaier, T. L. Reinecke, and S. N. Walck
Phys. Rev. Lett. 82, 1748 (1999), DOI: 10.1103/PhysRevLett.82.1748

Strong variation of the exciton g factors in self-assembled In0.60Ga0.40As quantum dots
M. Bayer, A. Kuther, F. Schäfer, J. P. Reithmaier, and A. Forchel
Phys. Rev. B 60, R8481-R8484 (1999), DOI: 10.1103/PhysRevB.60.R8481

Optical properties of thin films and quantum wells of In x Ga 1- x N/GaN and their dependence on laser irradiation
A. V. Bazhenov, A. V. Gorbunov, V. D. Negrii, J. Müller, M. Lipinski, and A. Forchel
Semicond. Sci. Technol. 14, 921 (1999), DOI: 10.1088/0268-1242/14/10/308

Metal wire definition by high resolution imprint and lift-off
D. Eisert, W. Braun, S. Kuhn, J. Koeth, and A. Forchel
Microelectron. Eng. 46, 179 (1999), DOI: 10.1016/S0167-9317(99)00056-8

Phonon interaction of single excitons in CdSe/ZnSe quantum dot structures
F. Gindele, K. Hild, W. Langbein, U. Woggon, K. Leonardi, D. Hommel, T. Kümmell, G. Bacher, and A. Forchel
J. Lumin. 83-84, 305 (1999), DOI: 10.1016/S0022-2313(99)00116-7

Angle dependence of the spontaneous emission from confined optical modes in photonic dots
T. Gutbrod, M. Bayer, A. Forchel, P. A. Knipp, T. L. Reinecke, A. I. Tartakovskii, V. D. Kulakovskii, N. A. Gippius, and S. G. Tikhodeev
Phys. Rev. B 59, 2223 (1999), DOI: 10.1103/PhysRevB.59.2223

Recombination dynamics in dry-etched (Cd,Zn)Se/ZnSe nanostructures: Influence of exciton localization
K. Herz, G. Bacher, A. Forchel, H. Straub, G. Brunthaler, W. Faschinger, G. Bauer, and C. Vieu
Phys. Rev. B 59, 2888 (1999), DOI: 10.1103/PhysRevB.59.2888

Short-cavity edge-emitting lasers with deeply etched distributed Bragg mirrors
E. Höfling, R. Werner, F. Schäfer, J. P. Reithmaier, and A. Forchel
Electron. Lett. 35, 154 (1999), DOI: 10.1049/el:19990133

Nanolithography using a 100 kV electron beam lithography system with a Schottky emitter
M. Kamp, M. Emmerling, S. Kuhn, and A. Forchel
J. Vac. Sci. Technol. B 17, 86 (1999), DOI: 10.1116/1.590520

Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers
M. Kamp, J. Hofmann, A. Forchel, F. Schäfer, and J. P. Reithmaier
Appl. Phys. Lett. 74, 483 (1999), DOI: 10.1063/1.123164

InGaAs/AlGaAs quantum dot DFB lasers operating up to 213°C
M. Kamp, M. Schmitt, J. Hofmann, F. Schäfer, J. P. Reithmaier, and A. Forchel
Electron. Lett. 35, 2036 (1999), DOI: 10.1049/el:19991352

1.5μm Ga(Al)Sb laser grown on GaAs substrate by MBE
J. Koeth, T. Bleuel, R. Werner, and A. Forchel
J. Cryst. Growth 201-202, 841 (1999), DOI: 10.1016/S0022-0248(98)01453-5

A Simple Colloidal Route to Planar Micropatterned Er@ZnO Amplifiers
M. Kohls, T. Schmidt, H. Katschorek, L. Spanhel, G. Müller, N. Mais, A. Wolf, and A. Forchel
Adv. Mater. 11, 288 (1999), DOI: 10.1002/(SICI)1521-4095(199903)11:4<288::AID-ADMA288>3.0.CO;2-B

Highly Resolved Maskless Patterning on InP by Focused Ion Beam Enhanced Wet Chemical Etching
H. König, J. P. Reithmaier, and A. Forchel
Jpn. J. Appl. Phys. 38, 6142 (1999), DOI: 10.1143/JJAP.38.6142

1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation
H. König, S. Rennon, J. P. Reithmaier, A. Forchel, J.-L. Gentner, and L. Goldstein
Appl. Phys. Lett. 75, 1491 (1999), DOI: 10.1063/1.124732

Fine Structure of Biexciton Emission in Symmetric and Asymmetric CdSe/ZnSe Single Quantum Dots
V. D. Kulakovskii, G. Bacher, R. Weigand, T. Kümmell, A. Forchel, E. Borovitskaya, K. Leonardi, and D. Hommel
Phys. Rev. Lett. 82, 1780 (1999), DOI: 10.1103/PhysRevLett.82.1780

Green emitting DFB laser diodes based on ZnSe
M. Legge, G. Bacher, A. Forchel, M. Klude, M. Fehrer, and D. Hommel
Electron. Lett. 35, 718 (1999), DOI: 10.1049/el:19990488

Er doped nanocrystalline ZnO planar waveguide structures for 1.55 μm amplifier applications
N. Mais, J. P. Reithmaier, A. Forchel, M. Kohls, L. Spanhel, and G. Müller
Appl. Phys. Lett. 75, 2005 (1999), DOI: 10.1063/1.124897

Improved carrier confinement in GaInAs/AlGaAs lasers by MBE grown short period superlattice quantum well barriers
F. Schäfer, B. Mayer, J. P. Reithmaier, and A. Forchel
J. Cryst. Growth 201-202, 914 (1999), DOI: 10.1016/S0022-0248(98)01484-5

High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
F. Schäfer, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 74, 2915 (1999), DOI: 10.1063/1.123964

Growth and Structural Characterization of InGaN Vertical Cavity Surface Emitting Lasers Operating at Room Temperature
T. Someya, R. Werner, A. Forchel, and Y. Arakawa
Phys. Status Solidi A 176, 63 (1999), DOI: 10.1002/(SICI)1521-396X(199911)176:1<63::AID-PSSA63>3.0.CO;2-8

Room temperature lasing at blue wavelengths in gallium nitride microcavities
T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa
Science 285, 1905 (1999), DOI: 10.1126/science.285.5435.1905

Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser
K. Tachibana, T. Someya, Y. Arakawa, R. Werner, and A. Forchel
Appl. Phys. Lett. 75, 2605 (1999), DOI: 10.1063/1.125092

Far-field emission pattern and photonic band structure in one-dimensional photonic crystals made from semiconductor microcavities
A. I. Tartakovskii, V. D. Kulakovskii, P. S. Dorozhkin, A. Forchel, and J. P. Reithmaier
Phys. Rev. B 59, 10251 (1999), DOI: 10.1103/PhysRevB.59.10251

In-plane strain distribution in free-standing GaAs/InGaAs/GaAs single quantum well surface nanostructures on GaAs[001]
A. Ulyanenkov, T. Baumbach, N. Darowski, U. Pietsch, K. H. Wang, A. Forchel, and T. Wiebach
J. Appl. Phys. 85, 1524 (1999), DOI: 10.1063/1.369282

Evaluation of strain distribution in freestanding and buried lateral nanostructures
A. Ulyanenkov, N. Darowski, J. Grenzer, U. Pietsch, K. H. Wang, and A. Forchel
Phys. Rev. B 60, 16701 (1999), DOI: 10.1103/PhysRevB.60.16701

Magnetic-field dependence of the exciton-photon coupling in structured photonic cavities
S. N. Walck, T. L. Reinecke, M. Bayer, T. Gutbrod, J. P. Reithmaier, and A. Forchel
Phys. Rev. B 60, 10695 (1999), DOI: 10.1103/PhysRevB.60.10695

Experimental and theoretical study of strain-induced AlGaAs/GaAs quantum dots using a self-organized GaSb island as a stressor
T. Wang and A. Forchel
J. Appl. Phys. 86, 2001 (1999), DOI: 10.1063/1.371000

Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy
T. Wang and A. Forchel
J. Appl. Phys. 85, 2591 (1999), DOI: 10.1063/1.369625

Quantized conductance in up to 20 μm long shallow etched GaAs/AlGaAs quantum wires
L. Worschech, F. Beuscher, and A. Forchel
Appl. Phys. Lett. 75, 578 (1999), DOI: 10.1063/1.124447

Nach oben

Biexcitons in semiconductor quantum wires
T. Baars, W. Braun, M. Bayer, and A. Forchel
Phys. Rev. B 58, R1750-R1753 (1998), DOI: 10.1103/PhysRevB.58.R1750

UHV-ECR etching and in-situ analysis of wide bandgap II–VI nanostructures
G. Bacher, T. Kümmell, K. Herz, A. Forchel, J. Nürnberger, W. Faschinger, and G. Landwehr
Physica E Low Dimens. Syst. Nanostruct. 2, 547 (1998), DOI: 10.1016/S1386-9477(98)00113-1

Hot exciton relaxation in CdZnSe/ZnSe quantum wells and quantum dots
G. Bacher, R. Spiegel, T. Kümmell, R. Weigand, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
J. Cryst. Growth 184-185, 330 (1998), DOI: 10.1016/S0022-0248(98)80070-5

Exciton complexes in InxGa1−xAs/GaAs quantum dots
M. Bayer, T. Gutbrod, A. Forchel, V. D. Kulakovskii, A. Gorbunov, M. Michel, R. Steffen, and K. H. Wang
Phys. Rev. B 58, 4740 (1998), DOI: 10.1103/PhysRevB.58.4740

Optical Modes in Photonic Molecules
M. Bayer, T. Gutbrod, J. P. Reithmaier, A. Forchel, T. L. Reinecke, P. A. Knipp, A. A. Dremin, and V. D. Kulakovskii
Phys. Rev. Lett. 81, 2582 (1998), DOI: 10.1103/PhysRevLett.81.2582

Exciton complexes in InGaAs/GaAs quantum dots
M. Bayer, V. D. Kulakovskii, T. Gutbrod, and A. Forchel
Phys. B: Condens. Matter 249-251, 620 (1998), DOI: 10.1016/S0921-4526(98)00261-0

Multiple resonances involving magnetoexcitons in a GaAs/Al0.30Ga0.70As quantum well
M. Bayer, T. L. Reinecke, S. N. Walck, V. B. Timofeev, and A. Forchel
Phys. Rev. B 58, 9648 (1998), DOI: 10.1103/PhysRevB.58.9648

Exciton binding energies and diamagnetic shifts in semiconductor quantum wires and quantum dots
M. Bayer, S. N. Walck, T. L. Reinecke, and A. Forchel
Phys. Rev. B 57, 6584 (1998), DOI: 10.1103/PhysRevB.57.6584

Size dependence of exciton-exciton scattering in semiconductor quantum wires
W. Braun, M. Bayer, A. Forchel, O. M. Schmitt, L. Bányai, H. Haug, and A. I. Filin
Phys. Rev. B 57, 12364 (1998), DOI: 10.1103/PhysRevB.57.12364

Localization of excitons in thermally annealed In0.14Ga0.86As/GaAs quantum wells studied by time-integrated four-wave mixing
W. Braun, L. V. Kulik, T. Baars, M. Bayer, and A. Forchel
Phys. Rev. B 57, 7196 (1998), DOI: 10.1103/PhysRevB.57.7196

Structural characterisation of a GaAs surface wire structure by triple axis X-ray grazing incidence diffraction
N. Darowski, K. Paschke, U. Pietsch, K. H. Wang, A. Forchel, D. Lübbert, and T. Baumbach
Phys. B: Condens. Matter 248, 104 (1998), DOI: 10.1016/S0921-4526(98)00212-9

X-ray diffraction analysis of strain relaxation in free standing and buried GaAs/GaInAs/GaAs SQW lateral structures
N. Darowski, U. Pietsch, K. H. Wang, A. Forchel, Q. Shen, and S. Kycia
Thin Solid Films 336, 271 (1998), DOI: 10.1016/S0040-6090(98)01310-8

Frequency selective Bragg filters based on (Mg,Zn) (S,Se) waveguides for the visible spectral range
D. Eisert, G. Bacher, A. Forchel, K. Leonardi, and D. Hommel
IEEE Photon. Technol. Lett. 10, 1130 (1998), DOI: 10.1109/68.701525

Lateral and longitudinal mode control in CdZnSe-based laser diodes
D. Eiserta, G. Bacher, M. Legge, A. Forchel, J. Nürnberger, K. Schüll, W. Faschinger, and G. Landwehr
J. Cryst. Growth 184-185, 558 (1998), DOI: 10.1016/S0022-0248(98)80116-4

Excitons in near-surface quantum wells in magnetic fields: Experiment and theory
N. A. Gippius, A. L. Yablonskii, A. B. Dzyubenko, S. G. Tikhodeev, L. V. Kulik, V. D. Kulakovskii, and A. Forchel
J. Appl. Phys. 83, 5410 (1998), DOI: 10.1063/1.367370

Weak and strong coupling of photons and excitons in photonic dots
T. Gutbrod, M. Bayer, A. Forchel, J. P. Reithmaier, T. L. Reinecke, S. Rudin, and P. A. Knipp
Phys. Rev. B 57, 9950 (1998), DOI: 10.1103/PhysRevB.57.9950

Optical and structural properties of GaInAs/InP single quantum wells grown by solid-source MBE with a GaP decomposition source
E. Höfling, J. P. Reithmaier, T. Baars, M. Bayer, and A. Forchel
J. Cryst. Growth 191, 607 (1998), DOI: 10.1016/S0022-0248(98)00361-3

Direct measurement of photoluminescence spatial distribution near the GaAs/AlGaAs quantum well edge using a scanning near-field optical microscope
D. V. Kazantsev, N. A. Gippius, J. Oshinowo, and A. Forchel
Ultramicroscopy 71, 235 (1998), DOI: 10.1016/S0304-3991(97)00116-2

Sample temperature measurement in a scanning near-field optical microscope
D. V. Kazantsev, G. Guttroff, M. Bayer, and A. Forchel
Appl. Phys. Lett. 72, 689 (1998), DOI: 10.1063/1.120847

Development of wide range energy focused ion beam lithography system
M. Kinokuni, H. Sawaragi, R. Mimura, R. Aihara, and A. Forchel
J. Vac. Sci. Technol. B 16, 2484 (1998), DOI: 10.1116/1.590195

GaSb vertical-cavity surface-emitting lasers for the 1.5 μm range
J. Koeth, R. Dietrich, and A. Forchel
Appl. Phys. Lett. 72, 1638 (1998), DOI: 10.1063/1.121138

Focused ion beam implantation for opto- and microelectronic devices
H. König, N. Mais, E. Höfling, J. P. Reithmaier, A. Forchel, H. Müssig, and H. Brugger
J. Vac. Sci. Technol. B 16, 2562 (1998), DOI: 10.1116/1.590210

1.55 μm single-mode lasers with combined gain coupling and lateral carrier confinement by focused ion-beam implantation
H. König, J. P. Reithmaier, A. Forchel, J.-L. Gentner, and L. Goldstein
Appl. Phys. Lett. 73, 2703 (1998), DOI: 10.1063/1.122564

Conductance quantization above 30 K in GaAlAs shallow-etched quantum point contacts smoothly joined to the background 2DEG
A. Kristensen, J. B. Jensen, M. Zaffalon, C. B. Sørensen, S. M. Reimann, P. E. Lindelof, M. Michel, and A. Forchel
J. Appl. Phys. 83, 607 (1998), DOI: 10.1063/1.366724

Temperature dependence of the “0.7” 2e2/h quasi-plateau in strongly confined quantum point contacts
A. Kristensen, P. E. Lindelof, J. Bo Jensen, M. Zaffalon, J. Hollingbery, S. W. Pedersen, J. Nygård, H. Bruus, S. M. Reimann, C. B. Sørensen, M. Michel, and A. Forchel
Phys. B: Condens. Matter 249-251, 180 (1998), DOI: 10.1016/S0921-4526(98)00094-5

Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth
A. Kristensen, C. B. Sørensen, P. E. Lindelof, J. B. Jensen, J. Nygård, M. Zaffalon, F. Beuscher, M. Michel, and A. Forchel
Solid-State Electron. 42, 1103 (1998), DOI: 10.1016/S0038-1101(97)00310-9

Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation
M. Kühnelt, T. Leichtner, S. Kaiser, B. Hahn, H. P. Wagner, D. Eisert, G. Bacher, and A. Forchel
Appl. Phys. Lett. 73, 584 (1998), DOI: 10.1063/1.121863

Excitonic molecules in InGaAs/GaAs quantum dots
V. D. Kulakovskii, M. Bayer, M. Michel, A. Forchel, T. Gutbrod, and F. Faller
Phys.-Usp. 41, 115 (1998), DOI: 10.1070/PU1998v041n02ABEH000340

Magnetic excitons in near-surface quantum wells: Experiment and theory
V. D. Kulakovskii, L. V. Kulik, A. L. Yablonskii, A. B. Dzyubenko, N. A. Gippius, S. G. Tikhodeev, and A. Forchel
Phys. Solid State 40, 740 (1998), DOI: 10.1134/1.1130436

Size dependence of strain relaxation and lateral quantization in deep etched CdxZn1−xSe/ZnSe quantum wires
T. Kümmell, G. Bacher, A. Forchel, G. Lermann, W. Kiefer, B. Jobst, D. Hommel, and G. Landwehr
Phys. Rev. B 57, 15439 (1998), DOI: 10.1103/PhysRevB.57.15439

Single zero-dimensional excitons in CdSe/ZnSe nanostructures
T. Kümmell, R. Weigand, G. Bacher, A. Forchel, K. Leonardi, D. Hommel, and H. Selke
Appl. Phys. Lett. 73, 3105 (1998), DOI: 10.1063/1.122687

Zeeman splitting of excitons and biexcitons in single In0.60Ga0.40As/GaAs self-assembled quantum dots
A. Kuther, M. Bayer, A. Forchel, A. Gorbunov, V. B. Timofeev, F. Schäfer, and J. P. Reithmaier
Phys. Rev. B 58, R7508-R7511 (1998), DOI: 10.1103/PhysRevB.58.R7508

Confined optical modes in photonic wires
A. Kuther, M. Bayer, T. Gutbrod, A. Forchel, P. A. Knipp, T. L. Reinecke, and R. Werner
Phys. Rev. B 58, 15744 (1998), DOI: 10.1103/PhysRevB.58.15744

High temperature operation of II-VI ridge-waveguide laser diodes
M. Legge, S. Bader, G. Bacher, H. J. Lugauer, A. Waag, A. Forchel, and G. Landwehr
Electron. Lett. 34, 2032 (1998), DOI: 10.1049/el:19981444

Strain studies on CdxZn1−xSe/ZnSe quantum wires by micro-resonance Raman spectroscopy
G. Lermann, T. Bischof, B. Schreder, A. Materny, H. Schwoerer, W. Kiefer, T. Kümmell, G. Bacher, A. Forchel, and G. Landwehr
J. Cryst. Growth 184-185, 1330 (1998), DOI: 10.1016/S0022-0248(98)80274-1

Conductance oscillations in overgrown sub 100 nm InP/ quantum wires
I. Maximov, N. Carlsson, P. Omling, P. Ramvall, L. Samuelson, W. Seifert, Q. Wang, S. Lourdudoss, E. R. Messmer, A. Forchel, and K. Kerkel
Semicond. Sci. Technol. 13, A67-A70 (1998), DOI: 10.1088/0268-1242/13/8a/021

Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells
B. Ohnesorge, R. Weigand, G. Bacher, A. Forchel, W. Riedl, and F. H. Karg
Appl. Phys. Lett. 73, 1224 (1998), DOI: 10.1063/1.122134

Localization of excitons in ultrathin CdS/ZnS quantum structures
W. Petri, M. Hetterich, U. Woggon, C. Märkle, A. Dinger, M. Grü, C. Klingshirn, T. Kümmell, G. Bacher, and A. Forchel
J. Cryst. Growth 184-185, 320 (1998), DOI: 10.1016/S0022-0248(98)80068-7

Focused ion-beam implantation induced thermal quantum-well intermixing for monolithic optoelectronic device integration
J. P. Reithmaier and A. Forchel
IEEE J. Select. Topics Quantum Electron. 4, 595 (1998), DOI: 10.1109/2944.720469

Hydride vapour phase epitaxy for nanostructures
E. Rodrı́guez Messmer, S. Lourdudoss, J. Ahopelto, H. Lipsanen, K. Hieke, J.-O. Wesström, J. P. Reithmaier, K. Kerkel, A. Forchel, W. Seifert, N. Carlsson, and L. Samuelson
Mater. Sci. Eng. B 51, 238 (1998), DOI: 10.1016/S0921-5107(97)00268-7

High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers
F. Schäfer, B. Mayer, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 73, 2863 (1998), DOI: 10.1063/1.122611

Activation of 1.54 μm Er 3+ Fluorescence in Concentrated II−VI Semiconductor Cluster Environments
T. Schmidt, G. Müller, L. Spanhel, K. Kerkel, and A. Forchel
Chem. Mater. 10, 65 (1998), DOI: 10.1021/cm9702169

Relaxation of hot excitons in CdZnSe/ZnSe quantum wells and quantum dots
R. Spiegel, G. Bacher, O. Breitwieser, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
Superlattices Microstruct. 23, 1093 (1998), DOI: 10.1006/spmi.1996.0585

Exciton-photon coupling in photonic wires
A. I. Tartakovskii, V. D. Kulakovskii, A. Forchel, and J. P. Reithmaier
Phys. Rev. B 57, R6807-R6810 (1998), DOI: 10.1103/PhysRevB.57.R6807

Exciton-photon interaction in low-dimensional semiconductor microcavities
A. I. Tartakovskii, V. D. Kulakovskii, Y. I. Koval’, T. B. Borzenko, A. Forchel, and J. P. Reithmaier
J. Exp. Theor. Phys. 87, 723 (1998), DOI: 10.1134/1.558714

Near surface quantum well excitons in magnetic fields
S. G. Tikhodeev, N. A. Gippius, A. B. Dzyubenko, L. V. Kulik, V. D. Kulakovskii, and A. Forchel
Phys. B: Condens. Matter 249-251, 580 (1998), DOI: 10.1016/S0921-4526(98)00191-4

Kinetics of dark excitons and excitonic trions in InGaAs single quantum well
V. B. Timofeev, A. V. Larionov, J. Zeman, G. Martinez, V. I. Falko, M. Bayer, and A. Forchel
Eur. Phys. J. B 4, 39 (1998), DOI: 10.1007/s100510050348

Exciton dephasing in ZnSe quantum wires
H. P. Wagner, W. Langbein, J. M. Hvam, G. Bacher, T. Kümmell, and A. Forchel
Phys. Rev. B 57, 1797 (1998), DOI: 10.1103/PhysRevB.57.1797

Effect of the hole subband mixing on the spin splitting of heavy-hole excitons in coupled In0.045Ga0.955As/GaAs double quantum wells
T. Wang, M. Bayer, and A. Forchel
Phys. Rev. B 58, R10183-R10186 (1998), DOI: 10.1103/PhysRevB.58.R10183

Growth and optical investigation of strain-induced AlGaAs/GaAs quantum dots using self-organized GaSb islands as a stressor
T. Wang and A. Forchel
Appl. Phys. Lett. 73, 1847 (1998), DOI: 10.1063/1.122302

Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well
T. Wang, F. Kieseling, and A. Forchel
Phys. Rev. B 58, 3594 (1998), DOI: 10.1103/PhysRevB.58.3594

3D versus 1D Quantum Confinement in Coherently Strained CdS/ZnS Quantum Structures
U. Woggon, F. Gindele, W. Petri, M. Hetterich, M. Grn, C. Klingshirn, W. Langbein, J. M. Hvam, T. Kmell, G. Bacher, and A. Forchel
Phys. Status Solidi B 206, 501 (1998), DOI: 10.1002/(SICI)1521-3951(199803)206:1<501::AID-PSSB501>3.0.CO;2-G

Optical properties of laser diodes and heterostructures based on beryllium chalcogenides
U. Zehnder, D. R. Yakovlev, W. Ossau, T. Gerhard, F. Fischer, H. J. Lugauer, M. Keim, G. Reuscher, T. Litz, A. Waag, K. Herz, G. Bacher, A. Forchel, and G. Landwehr
J. Cryst. Growth 184-185, 541 (1998), DOI: 10.1016/S0022-0248(98)80112-7

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Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
J. Ahopelto, M. Sopanen, H. Lipsanen, S. Lourdudoss, E. Rodrı́guez Messmer, E. Höfling, J. P. Reithmaier, A. Forchel, A. Petersson, and L. Samuelson
Appl. Phys. Lett. 70, 2828 (1997), DOI: 10.1063/1.119015

Relaxation of hot excitons in inhomogeneously broadened CdxZn1−xSe/ZnSe nanostructures
G. Bacher, R. Spiegel, T. Kümmell, O. Breitwieser, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
Phys. Rev. B 56, 6868 (1997), DOI: 10.1103/PhysRevB.56.6868

Many-body effects in the quasi-one-dimensional magnetoplasma
M. Bayer, C. Schlier, C. Gréus, A. Forchel, S. Benner, and H. Haug
Phys. Rev. B 55, 13180 (1997), DOI: 10.1103/PhysRevB.55.13180

Enhancement of exciton binding energies in quantum wires and quantum dots
M. Bayer, S. N. Walck, T. L. Reinecke, and A. Forchel
EPL 39, 453 (1997), DOI: 10.1209/epl/i1997-00376-7

Photoluminescence study of InGaN films and InGaN/GaN quantum wells produced by molecular beam epitaxy
A. V. Bazhenov, T. X. Hoai, J. Müller, M. Lipinski, and A. Forchel
Institute of Physics conference series, Defect Recognition and Image Processing in Semiconductors 1997, 363 (1997), DOI: 10.1201/9781315140810-74

Enhanced exciton-phonon scattering in InxGa1−xAs/GaAs quantum wires
W. Braun, M. Bayer, A. Forchel, H. Zull, J. P. Reithmaier, A. I. Filin, and T. L. Reinecke
Phys. Rev. B 56, 12096 (1997), DOI: 10.1103/PhysRevB.56.12096

Excitonic wave packets in In0.135Ga0.865 As/GaAs quantum wires
W. Braun, M. Bayer, A. Forchel, H. Zull, J. P. Reithmaier, A. I. Filin, S. N. Walck, and T. L. Reinecke
Phys. Rev. B 55, 9290 (1997), DOI: 10.1103/PhysRevB.55.9290

Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction
N. Darowski, K. Paschke, U. Pietsch, K. H. Wang, A. Forchel, T. Baumbach, and U. Zeimer
J. Phys. D: Appl. Phys. 30, L55-L59 (1997), DOI: 10.1088/0022-3727/30/16/001

Wavelength control in II–VI laser diodes with first order distributed Bragg reflectors
D. Eisert, G. Bacher, M. Legge, A. Forchel, J. Nürnberger, K. Schüll, W. Faschinger, and G. Landwehr
Appl. Phys. Lett. 71, 1026 (1997), DOI: 10.1063/1.119716

Exciton Spin-Splitting in InxGa1—xAs Quantum Wires and Dots
T. Gutbrod, M. Bayer, A. Forchel, A. Gurbunov, A. I. Tartakovskii, K. H. Wang, and E. Höfling
Phys. Status Solidi A 164, 409 (1997), DOI: 10.1002/1521-396X(199711)164:1<409::AID-PSSA409>3.0.CO;2-P

Investigation of Electronic Structure of InP Single Quantum Dots Using Near Field Scanning Optical Spectroscopy
G. Guttroff, M. Bayer, A. Forchel, D. V. Kazantsev, M. K. Zundel, and K. Eberl
Phys. Status Solidi A 164, 291 (1997), DOI: 10.1002/1521-396X(199711)164:1<291::AID-PSSA291>3.0.CO;2-T

Near field scanning optical spectroscopy of InP single quantum dots
G. Guttroff, M. Bayer, A. Forchel, D. V. Kazantsev, M. K. Zundel, and K. Eberl
JETP Lett. 66, 528 (1997), DOI: 10.1134/1.567559

Biexciton formation in CdxZn1−xSe/ZnSe quantum-dot and quantum-well structures
K. Herz, T. Kümmell, G. Bacher, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
Phys. Rev. B 56, 15261 (1997), DOI: 10.1103/PhysRevB.56.15261

Biexcitons in Low-Dimensional CdZnSe/ZnSe Structures
K. Herz, T. Kümmell, G. Bacher, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
Phys. Status Solidi A 164, 205 (1997), DOI: 10.1002/1521-396X(199711)164:1<205::AID-PSSA205>3.0.CO;2-C

MBE growth and optical investigation of GaSb/AlSb VCSEL structures for the 1.5µm range
J. Koeth, R. Dietrich, and A. Forchel
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 121 (1997), DOI: 10.1109/ISCS.1998.711577

Quantum dot multiexcitons in a magnetic field
V. D. Kulakovskii, M. Bayer, M. Michel, A. Forchel, T. Gutbrod, and F. Faller
JETP Lett. 66, 285 (1997), DOI: 10.1134/1.567469

Fabrication of dry etched CdZnSe/ZnSe quantum wires by thermally assisted electron cyclotron resonance etching
T. Kümmell, G. Bacher, A. Forchel, J. Nürnberger, W. Faschinger, G. Landwehr, B. Jobst, and D. Hommel
Appl. Phys. Lett. 71, 344 (1997), DOI: 10.1063/1.119533

Low damage thermally assisted electron cyclotron resonance etch technology for wide bandgap II-VI materials
T. Kümmell, G. Bacher, A. Forchel, J. Nürnberger, W. Faschinger, G. Landwehr, B. Jobst, and D. Hommel
J. Vac. Sci. Technol. B 15, 2656 (1997), DOI: 10.1116/1.589703

Resonant micro-Raman investigations of the ZnSe–LO splitting in II–VI semiconductor quantum wires
G. Lermann, T. Bischof, A. Materny, W. Kiefer, T. Kümmell, G. Bacher, A. Forchel, and G. Landwehr
J. Appl. Phys. 81, 1446 (1997), DOI: 10.1063/1.364181

Wire-width dependence of the LO-phonon splitting and photoluminescence energy in ZnSe/Cd0.35Zn0.65Se quantum wires
G. Lermann, T. Bischof, A. Materny, W. Kiefer, T. Kümmell, G. Bacher, A. Forchel, and G. Landwehr
Phys. Rev. B 56, 7469 (1997), DOI: 10.1103/PhysRevB.56.7469

Raman spectroscopy on CdZnSe/ZnSe quantum wires
G. Lermann, T. Bischof, B. Schreder, A. Materny, W. Kiefer, T. Kümmell, G. Bacher, A. Forchel, and G. Landwehr
Ber. Bunsenges. Phys. Chem. 101, 1665 (1997), DOI: 10.1002/bbpc.19971011122

Length quantization in In0.13Ga0.87As/GaAs quantum boxes with rectangular cross section
M. Michel, A. Forchel, and F. Faller
Appl. Phys. Lett. 70, 393 (1997), DOI: 10.1063/1.118384

ECR-MBE growth and high excitation properties of GaInN/GaN heterostructures
J. Müller, M. Lipinski, A. A. Maksimov, and A. Forchel
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 371 (1997), DOI: 10.1109/ISCS.1998.711657

ZnSe-Based Laser Diodes and LEDs Grown on ZnSe and GaAs Substrates
K. Ohkawa, M. Behringer, H. Wenisch, M. Fehrer, B. Jobst, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg, G. Bacher, D. Tönnies, and A. Forchel
Phys. Status Solidi B 202, 683 (1997), DOI: 10.1002/1521-3951(199708)202:2<683::AID-PSSB683>3.0.CO;2-8

Enhancement of spontaneous emission rates by three-dimensional photon confinement in Bragg microcavities
B. Ohnesorge, M. Bayer, A. Forchel, J. P. Reithmaier, N. A. Gippius, and S. G. Tikhodeev
Phys. Rev. B 56, R4367-R4370 (1997), DOI: 10.1103/PhysRevB.56.R4367

Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction
K. Paschke, T. Geue, T. A. Barberka, A. Bolm, U. Pietsch, M. Rösch, E. Batke, F. Faller, K. Kerkel, J. Oshinowo, and A. Forchel
Appl. Phys. Lett. 70, 1031 (1997), DOI: 10.1063/1.118473

Sol−Gel Synthesis and Spectroscopic Properties of Thick Nanocrystalline CdSe Films
V. Ptatschek, B. Schreder, K. Herz, U. Hilbert, W. Ossau, G. Schottner, O. Rahäuser, T. Bischof, G. Lermann, A. Materny, W. Kiefer, G. Bacher, A. Forchel, D. Su, M. Giersig, G. Müller, and L. Spanhel
J. Phys. Chem. B 101, 8898 (1997), DOI: 10.1021/jp971487

Microcavity lasers: emission from a fully confined photon state
J. P. Reithmaier, M. Röhner, F. Schäfer, H. Zull, and A. Forchel
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 553 (1997), DOI: 10.1109/ISCS.1998.711737

Size Dependence of Confined Optical Modes in Photonic Quantum Dots
J. P. Reithmaier, M. Röhner, H. Zull, F. Schäfer, A. Forchel, P. A. Knipp, and T. L. Reinecke
Phys. Rev. Lett. 78, 378 (1997), DOI: 10.1103/PhysRevLett.78.378

Laser emission from photonic dots
M. Röhner, J. P. Reithmaier, A. Forchel, F. Schäfer, and H. Zull
Appl. Phys. Lett. 71, 488 (1997), DOI: 10.1063/1.119587

Polarization-dependent formation of biexcitons in (Zn,Cd)Se/ZnSe quantum wells
R. Spiegel, G. Bacher, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
Phys. Rev. B 55, 9866 (1997), DOI: 10.1103/PhysRevB.55.9866

Angle Resolved Photoluminescence Excitation Spectroscopy of Exciton–Photon Modes in a Microcavity: K-Dependence and Relaxation
A. I. Tartakovskii, V. D. Kulakovskii, A. V. Larionov, J. P. Reithmaier, and A. Forchel
Phys. Status Solidi A 164, 81 (1997), DOI: 10.1002/1521-396X(199711)164:1<81::AID-PSSA81>3.0.CO;2-N

Excitons in Near Surface Quantum Wells: Local Probe of Semiconductor/Vacuum Surface
S. G. Tikhodeev, N. A. Gippius, A. L. Yablonskii, A. B. Dzyubenko, L. V. Kulik, V. D. Kulakovskii, and A. Forchel
Phys. Status Solidi A 164, 179 (1997), DOI: 10.1002/1521-396X(199711)164:1<179::AID-PSSA179>3.0.CO;2-9

Two-dimensional electron gas in double quantum wells with tilted bands
V. B. Timofeev, A. V. Larionov, P. S. Dorozhkin, M. Bayer, A. Forchel, and J. Straka
JETP Lett. 65, 877 (1997), DOI: 10.1134/1.567440

Phase matched second harmonie generation using a χ(2) modulated optical waveguide
H. P. Wagner, M. Kühnelt, G. Wein, B. Hahn, W. Gebhardt, D. Eisert, G. Bacher, and A. Forchel
J. Lumin. 72-74, 87 (1997), DOI: 10.1016/S0022-2313(96)00434-6

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Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
F. Adler, M. Geiger, A. Bauknecht, F. Scholz, H. Schweizer, M. H. Pilkuhn, B. Ohnesorge, and A. Forchel
J. Appl. Phys. 80, 4019 (1996), DOI: 10.1063/1.363361

Room temperature emission in narrow (14 nm) quantum wires with strong lateral confinement effects
G. Bacher, M. Illing, R. Spiegel, T. Kümmell, K. Herz, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
J. Cryst. Growth 159, 455 (1996), DOI: 10.1016/0022-0248(95)00717-2

Thermal stability of (Zn,Cd)(Se,S) heterostructures grown on GaAs
G. Bacher, D. Tönnies, D. Eisert, A. Forchel, M. O. Möller, M. Korn, B. Jobst, D. Hommel, G. Landwehr, J. Söllner, and M. Heuken
J. Appl. Phys. 79, 4368 (1996), DOI: 10.1063/1.361746

Size dependence of the changeover from geometric to magnetic confinement in In0.53Ga0.47As/InP quantum wires
M. Bayer, P. Ils, M. Michel, A. Forchel, T. L. Reinecke, and P. A. Knipp
Phys. Rev. B 53, 4668 (1996), DOI: 10.1103/PhysRevB.53.4668

Splitting of electronic levels with positive and negative angular momenta in In0.53Ga0.47As/InP quantum dots by a magnetic field
M. Bayer, O. Schilling, A. Forchel, T. L. Reinecke, P. A. Knipp, P. Pagnod-Rossiaux, and L. Goldstein
Phys. Rev. B 53, 15810 (1996), DOI: 10.1103/PhysRevB.53.15810

Direct and indirect excitons in coupled GaAs/Al0.30Ga0.70As double quantum wells separated by AlAs barriers
M. Bayer, V. B. Timofeev, F. Faller, T. Gutbrod, and A. Forchel
Phys. Rev. B 54, 8799 (1996), DOI: 10.1103/PhysRevB.54.8799

First order gain and index coupled distributed feedback lasers in ZnSe‐based structures with finely tunable emission wavelengths
D. Eisert, G. Bacher, N. Mais, J. P. Reithmaier, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
Appl. Phys. Lett. 68, 599 (1996), DOI: 10.1063/1.116480

Gain-coupled distributed feedback lasers in the blue-green spectral range by focused ion beam implantation
D. Eisert, G. Bacher, N. Mais, J. P. Reithmaier, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
J. Cryst. Growth 159, 591 (1996), DOI: 10.1016/0022-0248(95)00722-9

Ambipolar diffusion in GaAs/AlGaAs quantum wells with inserted AlAs monolayers
F. Faller, B. Ohnesorge, and A. Forchel
Compound semiconductors 1995, Institute of Physics conference series (1996), DOI:

Quantum wires and dots for optical studies
A. Forchel, P. Ils, K. H. Wang, O. Schilling, R. Steffen, and J. Oshinowo
Microelectron. Eng. 32, 317 (1996), DOI: 10.1016/0167-9317(95)00370-3

Optical studies of free-standing single InGaAs/GaAs quantum dots
A. Forchel, R. Steffen, T. Koch, M. Michel, M. Albrecht, and T. L. Reinecke
Semicond. Sci. Technol. 11, 1529 (1996), DOI: 10.1088/0268-1242/11/11S/013

Phase space filling and band gap renormalization in the luminescence of highly excited InGaAs/GaAs quantum wires
C. Gréus, A. Forchel, R. Spiegel, F. Faller, S. Benner, and H. Haug
EPL 34, 213 (1996), DOI: 10.1209/epl/i1996-00441-9

Reduced lateral straggling of implantation induced defects in III/V heterostructures by ion implantation along channeling directions
A. Kieslich, H. Doleschel, F. Kieseling, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett. 68, 102 (1996), DOI: 10.1063/1.116769

Interparticle interaction in spin-aligned and spin-degenerate exciton systems and magnetoplasmas in II-VI quantum wells
V. D. Kulakovskii, M. G. Tyazhlov, A. F. Dite, A. I. Filin, A. Forchel, D. R. Yakovlev, A. Waag, and G. Landwehr
Phys. Rev. B 54, 4981 (1996), DOI: 10.1103/PhysRevB.54.4981

Dielectric enhancement of excitons in near-surface quantum wells
L. V. Kulik, V. D. Kulakovskii, M. Bayer, A. Forchel, N. A. Gippius, and S. G. Tikhodeev
Phys. Rev. B 54, R2335-R2338 (1996), DOI: 10.1103/PhysRevB.54.R2335

Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots
B. Ohnesorge, M. Albrecht, J. Oshinowo, A. Forchel, and Y. Arakawa
Phys. Rev. B 54, 11532 (1996), DOI: 10.1103/PhysRevB.54.11532

First order gain‐coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation
A. Orth, J. P. Reithmaier, R. Zeh, H. Doleschel, and A. Forchel
Appl. Phys. Lett. 69, 1906 (1996), DOI: 10.1063/1.117617

Phonon Raman scattering in quantum wires
J. Rubio, H. P. van der Meulen, N. Mestres, J. M. Calleja, K. H. Wang, P. Ils, A. Forchel, N. A. Gippius, and S. G. Tikhodeev
Solid-State Electron. 40, 707 (1996), DOI: 10.1016/0038-1101(95)00347-9

Recombination and thermal emission of excitons in shallow CdTe/Cd1-xMgxTe quantum wells
R. Spiegel, G. Bacher, K. Herz, A. Forchel, T. Litz, A. Waag, and G. Landwehr
Phys. Rev. B 53, 4544 (1996), DOI: 10.1103/PhysRevB.53.4544

Excitonic lifetimes in (Zn,Cd)Se/ZnSe and ZnSe/Zn(Se,S) quantum wires
R. Spiegel, G. Bacher, K. Herz, M. Illing, T. Kümmell, A. Forchel, B. Jobst, D. Hommel, G. Landwehr, J. Söllner, and M. Heuken
Phys. Rev. B 53, R4233-R4236 (1996), DOI: 10.1103/PhysRevB.53.R4233

Single quantum dots as local probes of electronic properties of semiconductors
R. Steffen, A. Forchel, T. L. Reinecke, T. Koch, M. Albrecht, J. Oshinowo, and F. Faller
Phys. Rev. B 54, 1510 (1996), DOI: 10.1103/PhysRevB.54.1510

Exciton interaction effects in the emission spectra of single free-standing InGaAs/GaAs quantum dots
R. Steffen, T. Koch, J. Oshinowo, F. Faller, and A. Forchel
Surf. Sci. 361-362, 805 (1996), DOI: 10.1016/0039-6028(96)00538-9

Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low‐voltage electron beam lithography
R. Steffen, T. Koch, J. Oshinowo, F. Faller, and A. Forchel
Appl. Phys. Lett. 68, 223 (1996), DOI: 10.1063/1.116467

Mixing of excitonic states containing light and heavy holes in an isolated GaAs/AlGaAs quantum well in a magnetic field
V. B. Timofeev, M. Bayer, A. Forchel, and M. Potemski
JETP Lett. 64, 57 (1996), DOI: 10.1134/1.567159

Subband renormalization in dense electron-hole plasmas in In0.53Ga0.47As/InP quantum wires
K. H. Wang, M. Bayer, A. Forchel, P. Ils, S. Benner, H. Haug, P. Pagnod-Rossiaux, and L. Goldstein
Phys. Rev. B 53, R10505-R10508 (1996), DOI: 10.1103/PhysRevB.53.R10505

Many body effects in the luminescence of quantum wires
K. H. Wang, M. Bayer, P. Ils, A. Forchel, S. Benner, H. Haug, P. Pagnod-Rossiaux, and L. Goldstein
Solid-State Electron. 40, 287 (1996), DOI: 10.1016/0038-1101(95)00266-9

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Deep Etched ZnSe-Based Nanostructures for Future Optoelectronic Applications
G. Bacher, M. Illing, A. Forchel, D. Hommel, B. Jobst, and G. Landwehr
Phys. Status Solidi B 187, 371 (1995), DOI: 10.1002/pssb.2221870215

Coupling of geometric confinement and magnetic confinement in In0.09Ga0.91As/GaAs quantum wells in magnetic fields with varying orientations
M. Bayer, Dremin, V. D. Kulakovskii, A. Forchel, F. Faller, P. A. Knipp, and T. L. Reinecke
Phys. Rev. B 52, 14728 (1995), DOI: 10.1103/PhysRevB.52.14728

Many-Body Effects in the Magnetoplasma of In 0.13 Ga 0.87 As/GaAs Quantum Wires
M. Bayer, C. Schlier, C. Gré, A. Forchel, S. Benner, and H. Haug
Jpn. J. Appl. Phys. 34, 4408 (1995), DOI: 10.1143/JJAP.34.4408

Electron-Hole Transitions between States with Nonzero Angular Momenta in the Magnetoluminescence of Quantum Dots
M. Bayer, A. Schmidt, A. Forchel, F. Faller, T. L. Reinecke, P. A. Knipp, Dremin, and V. D. Kulakovskii
Phys. Rev. Lett. 74, 3439 (1995), DOI: 10.1103/PhysRevLett.74.3439

Enhancement of spin splitting due to spatial confinement in InxGa1-xAs quantum dots
M. Bayer, V. B. Timofeev, T. Gutbrod, A. Forchel, R. Steffen, and J. Oshinowo
Phys. Rev. B 52, 11623 (1995), DOI: 10.1103/PhysRevB.52.R11623

Dynamics of carrier-capture processes in GaxIn1-xAs/GaAs near-surface quantum wells
J. Dreybrodt, F. Daiminger, J. P. Reithmaier, and A. Forchel
Phys. Rev. B 51, 4657 (1995), DOI: 10.1103/PhysRevB.51.4657

Lateral quantization effects in the Luminescence of InGaAs/InP quantum wires
A. Forchel, F. Kieseling, W. Braun, P. Ils, and K. H. Wang
Phys. Status Solidi B 188, 229 (1995), DOI: 10.1002/pssb.2221880120

GaInAs/GaAs quantum wire laser structures with strong gain coupling defined by reactive ion etching
A. Forchel, A. Orth, J. P. Reithmaier, and H. Zull
Electron. Lett. 31, 457 (1995), DOI: 10.1049/el:19950343

Linear polarization of photoluminescence and Raman scattering in open InGaAs/InP quantum well wires
N. A. Gippius, S. G. Tikhodeev, J. Rubio, J. M. Calleja, P. Ils, A. Forchel, and V. D. Kulakovskii
Phys. Status Solidi B 188, 269 (1995), DOI: 10.1002/pssb.2221880124

Direct optical analysis of the carrier diffusion in semiconductor wire structures
B. Hübner, R. Zengerle, and A. Forchel
Mater. Sci. Eng. B 35, 273 (1995), DOI: 10.1016/0921-5107(95)01403-9

Low power electronic optical bistability in single quantum well InP/InGaAsP Fabry–Perot waveguide resonators
B. Hübner, R. Zengerle, and A. Forchel
Appl. Phys. Lett. 66, 3090 (1995), DOI: 10.1063/1.113405

Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching
M. Illing
J. Vac. Sci. Technol. B 13, 2792 (1995), DOI: 10.1116/1.588267

First order distributed feedback operation in ZnSe based laser structures
M. Illing, G. Bacher, A. Forchel, D. Hommel, B. Jobst, and G. Landwehr
Appl. Phys. Lett. 67, 1 (1995), DOI: 10.1063/1.115478

Photoluminescence efficiency study of wet chemically etched CdTe/Cd 1− x Mg x Te wires
M. Illing, G. Bacher, A. Forchel, T. Litz, A. Waag, and G. Landwehr
Appl. Phys. Lett. 66, 1815 (1995), DOI: 10.1063/1.113331

Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wires
M. Illing, G. Bacher, T. Kümmell, A. Forchel, T. G. Andersson, D. Hommel, B. Jobst, and G. Landwehr
Appl. Phys. Lett. 67, 124 (1995), DOI: 10.1063/1.115504

Linear polarization of photoluminescence emission and absorption in quantum-well wire structures: Experiment and theory
P. Ils, C. Gréus, A. Forchel, V. D. Kulakovskii, N. A. Gippius, and S. G. Tikhodeev
Phys. Rev. B 51, 4272 (1995), DOI: 10.1103/PhysRevB.51.4272

Lateral quantization effects in modulated barrier InGaAs/InP quantum wires
K. Kerkel, J. Oshinowo, A. Forchel, J.-W. Weber, and E. Zielinski
Appl. Phys. Lett. 67, 3456 (1995), DOI: 10.1063/1.115278

Carrier lifetime in deep-etched InxGa1-xAs/InP quantum wires
F. Kieseling, W. Braun, P. Ils, M. Michel, A. Forchel, I. Gyuro, M. Klenk, and E. Zielinski
Phys. Rev. B 51, 13809 (1995), DOI: 10.1103/PhysRevB.51.13809

Barrier-confinement-controlled carrier transport into quantum wires
F. Kieseling, W. Braun, K. H. Wang, A. Forchel, P. A. Knipp, T. L. Reinecke, P. Pagnod-Rossiaux, and L. Goldstein
Phys. Rev. B 52, 11595 (1995), DOI: 10.1103/PhysRevB.52.R11595

Implantation induced damage in III/V-heterostructures
A. Kieslich, H. Doleschel, J. P. Reithmaier, A. Forchel, and N. G. Stoffel
Nucl. Instrum. Methods Phys. Res. B: Beam Interact. Mater. At. 99, 594 (1995), DOI: 10.1016/0168-583X(95)00323-1

Interparticle interaction in spin-aligned and spin-degenerate exciton systems in II–VI quantum wells
V. D. Kulakovskii, M. G. Tyazhlov, A. F. Dite, A. Forchel, D. R. Yakovlev, A. Waag, and G. Landwehr
Il Nuovo Cimento D 17, 1543 (1995), DOI: 10.1007/BF02457241

ZnSe-based DBR-laser diode
G. Landwehr, J. Nürnberger, G. Bacher, K. Schüll, A. Forchel, M. Illing, and N. Mais
Electron. Lett. 31, 2184 (1995), DOI: 10.1049/el:19951496

A closed UHV focused ion beam patterning and MBE regrowth technique
H. Müssig, T. Hackbarth, H. Brugger, A. Orth, J. P. Reithmaier, and A. Forchel
Mater. Sci. Eng. B 35, 208 (1995), DOI: 10.1016/0921-5107(95)01397-0

First-order gain-coupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and in situ overgrowth
A. Orth
J. Vac. Sci. Technol. B 13, 2714 (1995), DOI: 10.1116/1.588250

Gain-coupled distributed-feedback GaInAs-GaAs laser structures defined by maskless patterning with focused ion beams
A. Orth, J. P. Reithmaier, F. Faller, and A. Forchel
IEEE Photon. Technol. Lett. 7, 845 (1995), DOI: 10.1109/68.403992

Gain-modulated second order distributed feedback gratings fabricated by maskless focused ion beam implantation in GaInAsP heterostructures
A. Orth, J. P. Reithmaier, J. Müller, A. Kieslich, A. Forchel, J.-W. Weber, I. Gyuro, and E. Zielinski
Microelectron. Eng. 27, 343 (1995), DOI: 10.1016/0167-9317(94)00121-A

Recombination in deep etched CdZnSe/ZnSe quantum wires
R. Spiegel, G. Bacher, K. Herz, M. Illing, T. Kümmell, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr
Il Nuovo Cimento D 17, 1729 (1995), DOI: 10.1007/BF02457271

InGaAs/GaAs quantum wires and dots defined by low-voltage electron-beam lithography
R. Steffen
J. Vac. Sci. Technol. B 13, 2888 (1995), DOI: 10.1116/1.588311

Renormalization effects in dense neutral magnetoplasma photoexcited in CdTe/CdMnTe quantum wells
M. G. Tyazhlov, M. V. Lebedev, V. D. Kulakovskii, A. Forchel, D. R. Yakovlev, A. Waag, and G. Landwehr
Phys. Status Solidi B 188, 565 (1995), DOI: 10.1002/pssb.2221880154

Nach oben

Many body effects in transient luminescence spectra of a homogeneous electron-hole plasma in CdTe/CdMnTe quantum wells
G. Bacher, F. Daiminger, A. Forchel, A. Waag, T. Litz, and G. Landwehr
J. Cryst. Growth 138, 856 (1994), DOI: 10.1016/0022-0248(94)90920-2

Room temperature stimulated emission from a CdTe/CdMgTe superlattice laser structure in the red spectral range
G. Bacher, A. Forchel, A. Waag, and G. Landwehr
IEEE Photon. Technol. Lett. 6, 125 (1994), DOI: 10.1109/68.275403

Renormalization effects in the dense neutral magnetoplasma of quantum wells with two filled subbands
M. Bayer, A. Dremin, F. Faller, A. Forchel, V. D. Kulakovskii, B. N. Shepel, and T. G. Andersson
Phys. Rev. B 50, 17085 (1994), DOI: 10.1103/PhysRevB.50.17085

Magnetic-field-induced breakdown of quasi-one-dimensional quantum-wire quantization
M. Bayer, A. Forchel, I. E. Itskevich, T. L. Reinecke, P. A. Knipp, C. Gréus, R. Spiegel, and F. Faller
Phys. Rev. B 49, 14782 (1994), DOI: 10.1103/PhysRevB.49.14782

Time‐resolved investigations of excitonic recombination in highly strained InAs/Al 0.48 In 0.52 As quantum wells
F. Daiminger, A. F. Dite, E. Tournié, K. H. Ploog, and A. Forchel
J. Appl. Phys. 76, 618 (1994), DOI: 10.1063/1.357058

Thermalization and band renormalization in the zero-dimensional electron-hole system in InGaAs/GaAs quantum dots
F. Daiminger, A. Schmidt, K. Pieger, F. Faller, and A. Forchel
Semicond. Sci. Technol. 9, 896 (1994), DOI: 10.1088/0268-1242/9/5S/134

Renormalization effects in the dense electron-hole magnetoplasma of a strained InxGa1-xAs/GaAs single quantum well after picosecond excitation
A. F. Dite, V. D. Kulakovskii, F. Faller, and A. Forchel
Phys. Rev. B 50, 15063 (1994), DOI: 10.1103/PhysRevB.50.15063

Polarization-dependent optical effects in open quantum well wires
N. A. Gippius, S. G. Tikhodeev, A. Forchel, and V. D. Kulakovskii
Superlattices Microstruct. 16, 165 (1994), DOI: 10.1006/spmi.1994.1132

Optical polarization effects in semiconductor/vacuum nanostructures
N. A. Gippius, S. G. Tikhodeev, V. D. Kulakovskii, and A. Forchel
J. Exp. Theor. Phys. 59, 556 (1994), DOI:

Lateral quantization effects in the optical spectra of InGaAs/GaAs quantum wires
C. Gréus, M. Bayer, A. Forchel, S. Benner, H. Haug, P. A. Knipp, and T. L. Reinecke
Superlattices Microstruct. 16, 265 (1994), DOI: 10.1016/S0749-6036(09)80012-8

Photoluminescence excitation study of lateral-subband structure in barrier-modulated In0.09Ga0.91As quantum wires
C. Gréus, R. Spiegel, P. A. Knipp, T. L. Reinecke, F. Faller, and A. Forchel
Phys. Rev. B 49, 5753 (1994), DOI: 10.1103/PhysRevB.49.5753

Luminescence spectroscopy of dry etched single dots and wires
B. Hübner, B. Jacobs, C. Gréus, R. Zengerle, and A. Forchel
J. Vac. Sci. Technol. B 12, 3658 (1994), DOI: 10.1116/1.587634

Fabrication and optical characterization of wet chemically etched CdTe/CdMgTe wires
M. Illing, G. Bacher, A. Forchel, A. Waag, T. Litz, and G. Landwehr
J. Cryst. Growth 138, 638 (1994), DOI: 10.1016/0022-0248(94)90883-4

Lateral subband transitions in the luminescence spectra of a one-dimensional electron-hole plasma in In0.53Ga0.47As/InP quantum wires
P. Ils, A. Forchel, K. H. Wang, P. Pagnod-Rossiaux, and L. Goldstein
Phys. Rev. B 50, 11746 (1994), DOI: 10.1103/PhysRevB.50.11746

Room temperature study of strong lateral quantization effects in InGaAs/InP quantum wires
P. Ils, M. Michel, A. Forchel, I. Gyuro, M. Klenk, and E. Zielinski
Appl. Phys. Lett. 64, 496 (1994), DOI: 10.1063/1.111142

Strong lateral quantization effects in the luminescence of InGaAs/InP quantum wires
P. Ils, M. Michel, A. Forchel, I. Gyuro, M. Klenk, and E. Zielinski
Solid-State Electron. 37, 1183 (1994), DOI: 10.1016/0038-1101(94)90384-0

High-resolution definition of buried InGaAs/InP wires by selective thermal intermixing
K. Kerkel, J. Oshinowo, A. Forchel, J.-W. Weber, G. Laube, I. Gyuro, and E. Zielinski
J. Vac. Sci. Technol. B 12, 3685 (1994), DOI: 10.1116/1.587640

Minimum feature sizes and ion beam profile for a focused ion beam system with post-objective lens retarding and acceleration mode
A. Kieslich, J. P. Reithmaier, and A. Forchel
J. Vac. Sci. Technol. B 12, 3518 (1994), DOI: 10.1116/1.587462

Exciton mixing in the magnetophotoluminescence excitation spectra of shallow strained InxGa1-xAs/GaAs quantum wells
V. D. Kulakovskii, A. Forchel, K. Pieger, J. Straka, B. N. Shepel, and S. V. Nochevny
Phys. Rev. B 50, 7467 (1994), DOI: 10.1103/PhysRevB.50.7467

Selective high-temperature-stable oxygen implantation and MBE-overgrowth technique
H. Müssig, C. Woelk, H. Brugger, and A. Forchel
Institute of Physics conference series, Gallium arsenide and related compounds 1993 (1994), DOI:

Room‐temperature stimulated emission of optically pumped GaAs/AlAs quantum wires grown on (311) A ‐oriented substrates
A. Orth, J. P. Reithmaier, A. Forchel, R. Nötzel, and K. H. Ploog
Appl. Phys. Lett. 64, 3443 (1994), DOI: 10.1063/1.111236

Optical Investigation Of MBE Overgrown InGaAs/GaAs Wires
K. Pieger, C. Gréus, J. Straka, and A. Forchel
Institute of Physics conference series, Gallium arsenide and related compounds 1993 (1994), DOI:

High resolution focussed ion beam implantation with post objective lens retarding and acceleration
J. P. Reithmaier, A. Kieslich, H. Sawaragi, and A. Forchel
Microelectron. Eng. 23, 119 (1994), DOI: 10.1016/0167-9317(94)90118-X

Deep etched InGaAs/InP quantum dots with strong lateral confinement effects
O. Schilling, A. Forchel, and M. V. Lebedev
Superlattices Microstruct. 16, 261 (1994), DOI: 10.1016/S0749-6036(09)80011-6

Optical characterization of InGaAs/GaAs quantum dots defined by lateral top barrier modulation
A. Schmidt, A. Forchel, F. Faller, I. E. Itskevich, and A. M. Vasil'ev
Solid-State Electron. 37, 1101 (1994), DOI: 10.1016/0038-1101(94)90364-6

Low-voltage electron beam lithography on GaAs substrates for quantum wire fabrication
R. Steffen, F. Faller, and A. Forchel
J. Vac. Sci. Technol. B 12, 3653 (1994), DOI: 10.1116/1.587633

Ion‐implantation induced interdiffusion in CdTe/CdMgTe quantum wells
D. Tönnies, G. Bacher, D. Eisert, A. Forchel, A. Waag, T. Litz, and G. Landwehr
Appl. Phys. Lett. 65, 3194 (1994), DOI: 10.1063/1.112439

Photoluminescence study of strong interdiffusion in CdTe/CdMnTe quantum wells induced by rapid thermal annealing
D. Tönnies, G. Bacher, A. Forchel, A. Waag, and G. Landwehr
Appl. Phys. Lett. 64, 766 (1994), DOI: 10.1063/1.111006

Optical study of interdiffusion in CdTe and ZnSe based quantum wells
D. Tönnies, G. Bacher, A. Forchel, A. Waag, T. Litz, D. Hommel, C. Becher, G. Landwehr, M. Heuken, and M. Scholl
J. Cryst. Growth 138, 362 (1994), DOI: 10.1016/0022-0248(94)90834-6

Optical Study of Intermixing in CdTe/CdMgTe Quantum Wells
D. Tönnies, G. Bacher, A. Forchel, A. Waag, T. Litz, and G. Landwehr
Jpn. J. Appl. Phys. 33, L247-L249 (1994), DOI: 10.1143/JJAP.33.L247

Stimulated emission from a (CdMg)Te separate confinement quantum well laser
A. Waag, G. Bacher, A. Jakobs, A. Forchel, and G. Landwehr
J. Appl. Phys. 75, 5456 (1994), DOI: 10.1063/1.355707

Nach oben

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells
T. Bickl, B. Jacobs, J. Straka, and A. Forchel
Appl. Phys. Lett. 62, 1137 (1993), DOI: 10.1063/1.108767

Spin-splitting renormalization in the neutral dense magnetoplasma in InxGa1-xAs/InP quantum wells
L. V. Butov, V. D. Kulakovskii, and A. Forchel
Phys. Rev. B 48, 17933 (1993), DOI: 10.1103/PhysRevB.48.17933

Influence of the cap layer thickness on the optical properties of near surface GaInAs/GaAs quantum wells
J. Dreybrodt, F. Faller, A. Forchel, and J. P. Reithmaier
21, 198 (1993), DOI: 10.1016/0921-5107(93)90348-Q

Excitonic transitions in GaInAs/GaAs surface quantum wells
J. Dreybrodt, A. Forchel, and J. P. Reithmaier
Le Journal de Physique IV 03, C5-265-C5-268 (1993), DOI: 10.1051/jp4:1993552

Optical properties of Ga0.8In0.2As/GaAs surface quantum wells
J. Dreybrodt, A. Forchel, and J. P. Reithmaier
Phys. Rev. B 48, 14741 (1993), DOI: 10.1103/PhysRevB.48.14741

Lateral quantization in the optical emission of barrier-modulated wires
C. Gréus, L. V. Butov, F. Daiminger, A. Forchel, P. A. Knipp, and T. L. Reinecke
Phys. Rev. B 47, 7626 (1993), DOI: 10.1103/PhysRevB.47.7626

Optical studies of barrier modulated InGaAs/GaAs quantum wires
C. Gréus, A. Orth, F. Daiminger, L. V. Butov, J. Straka, and A. Forchel
Microelectron. Eng. 21, 397 (1993), DOI: 10.1016/0167-9317(93)90099-Q

Lateral quantization effects in the optical properties of barrier modulated InGaAs/GaAs wires
C. Gréus, R. Spiegel, F. Faller, and A. Forchel
Le Journal de Physique IV 03, 139 (1993), DOI: 10.1051/jp4:1993524

Rapid thermal annealing induced order‐disorder transition in Ga 0.52 In 0.48 P/(Al 0.35 Ga 0.65 ) 0.5 In 0.5 P heterostructures
Y. Hämisch, R. Steffen, A. Forchel, and P. Röntgen
Appl. Phys. Lett. 62, 3007 (1993), DOI: 10.1063/1.109172

Implantation Induced Order-Disorder Transition in Ga 0.52 In 0.48 P/(Al 0.35 Ga 0.65 ) 0.5 In 0.5 P Heterostructures
Y. Hämisch, R. Steffen, P. Röntgen, and A. Forchel
Jpn. J. Appl. Phys. 32, L1492-L1495 (1993), DOI: 10.1143/JJAP.32.L1492

An optical study of the lateral motion of two-dimensional electron-hole pairs in GaAs/AlGaAs quantum wells
H. Hillmer, A. Forchel, and C. W. Tu
J. Phys.: Condens. Matter 5, 5563 (1993), DOI: 10.1088/0953-8984/5/31/019

Fabrication and optical properties of InGaAs/InP quantum wires and dots with strong lateral quantization effects
P. Ils, M. Michel, A. Forchel, I. Gyuro, M. Klenk, and E. Zielinski
J. Vac. Sci. Technol. B 11, 2584 (1993), DOI: 10.1116/1.586629

Optical Investigations of the Sidewall Recombination in Wet Etched InGaAs/InP-Wires
B. Jacobs, M. Emmerling, A. Forchel, I. Gyuro, P. Speier, and E. Zielinski
Jpn. J. Appl. Phys. 32, L173-L176 (1993), DOI: 10.1143/JJAP.32.L173

Comparison of the sidewall recombination in dry and wet etched InGaAs/InP wires
B. Jacobs, H. Zull, A. Forchel, I. Gyuro, P. Speier, E. Zielinski, and P. Röntgen
Microelectron. Eng. 21, 401 (1993), DOI: 10.1016/0167-9317(93)90100-J

Investigation of the longitudinal and lateral distribution of implantation induced damage in GaAs/InGaAs heterostructures
A. Kieslich, H. Doleschel, F. Faller, A. Forchel, and N. G. Stoffel
J. Vac. Sci. Technol. B 11, 2544 (1993), DOI: 10.1116/1.586663

Optical investigation of implantation damage in GaAs/AlGaAs quantum wells
A. Kieslich, J. Straka, A. Forchel, and N. G. Stoffel
Nucl. Instrum. Methods Phys. Res. B: Beam Interact. Mater. At. 80-81, 616 (1993), DOI: 10.1016/0168-583X(93)96193-G

Photoluminescence study of implantation‐induced intermixing of In 0.53 Ga 0.47 As/InP single quantum wells by argon ions
J. Oshinowo, J. Dreybrodt, A. Forchel, N. Mestres, J. M. Calleja, I. Gyuro, P. Speier, and E. Zielinski
J. Appl. Phys. 74, 1983 (1993), DOI: 10.1063/1.354758

Investigation of InGaAs/InP interdiffusion by simultaneous transmission electron microscopy and photoluminescence analysis
J. Oshinowo, A. Forchel, J. D. Ganière, P. Ruterana, P. A. Stadelmann, I. Gyuro, G. Laube, and E. Zielinski
21, 277 (1993), DOI: 10.1016/B978-0-444-81769-3.50041-3

Carrier relaxation in intermixed GaAs/AlxGa1-xAs quantum wires
F. E. Prins, G. Lehr, E. M. Fröhlich, G. Mayer, and H. Schweizer
Phys. Rev. B 47, 4060 (1993), DOI: 10.1103/PhysRevB.47.4060

Carrier transport into intermixed GaAs/AlGaAs quantum wires
F. E. Prins, G. Lehr, E. M. Fröhlich, G. Mayer, H. Schweizer, J. Straka, A. Forchel, and G. W. Smith
Appl. Phys. Lett. 62, 1256 (1993), DOI: 10.1063/1.108751

Optical analysis of quantum confined Stark effect in overgrown InGaAs/InP quantum wires
O. Schilling, A. Forchel, A. Kohl, and S. Brittner
J. Vac. Sci. Technol. B 11, 2556 (1993), DOI: 10.1116/1.586623

Optical investigation of interdiffusion in CdTe/CdMnTe quantum wells
D. Tönnies, G. Bacher, A. Forchel, A. Waag, and G. Landwehr
Mater. Sci. Eng. B 21, 274 (1993), DOI: 10.1016/B978-0-444-81769-3.50040-1

Strained InAs/AlxGa0.48 − xIn0.52As heterostructures: a tunable quantum well materials system for light emission from the near-IR to the mid-IR
E. Tournié, K. H. Ploog, P. Grunberg, S. Kadret, A. Joullié, F. Daiminger, L. V. Butov, and A. Forchel
Mater. Sci. Eng. B 21, 288 (1993), DOI: 10.1016/0921-5107(93)90369-X

Optical orientation of holes and electrons in strained layer InGaAs/GaAs quantum wells
A. M. Vasil'ev, F. Daiminger, J. Straka, A. Forchel, V. P. Kochereshko, G. L. Sandler, and I. N. Uraltsev
Superlattices Microstruct. 13, 97 (1993), DOI: 10.1006/spmi.1993.1019

Optical emission from the one-dimensional electron gas in narrow modulation-doped GaAs/(InGa)As/(AlGa)As quantum wires fabricated by lateral top barrier modulation
J. Wagner, D. Behr, D. Richards, T. Bickl, A. Forchel, M. Emmerling, and K. Köhler
Superlattices Microstruct. 14, 265 (1993), DOI: 10.1006/spmi.1993.1137

Nach oben

Many-body effects in dense electron-hole plasma in InGaAs QWs with simple and complex valence band
L. V. Butov, V. D. Kulakovskii, T. G. Andersson, A. Forchel, and D. Grützmacher
Surf. Sci. 263, 457 (1992), DOI: 10.1016/0039-6028(92)90388-M

Excitons in dense two-dimensional electron-hole magnetoplasmas
L. V. Butov, V. D. Kulakovskii, G. E. W. Bauer, A. Forchel, and D. Grützmacher
Phys. Rev. B 46, 12765 (1992), DOI: 10.1103/PhysRevB.46.12765

High voltage electron beam lithography of the resolution limits of SAL 601 negative resist
A. Claβen, S. Kuhn, J. Straka, and A. Forchel
Microelectron. Eng. 17, 21 (1992), DOI: 10.1016/0167-9317(92)90007-E

Time-Resolved Investigation of Recombination and Carrier Capture in Spatially Homogeneous 2D Electron–Hole Plasmas
F. Daiminger, B. Neppert, A. Forchel, and J. Straka
Phys. Status Solidi B 173, 397 (1992), DOI: 10.1002/pssb.2221730140

Optical spectroscopy on InGaAs/GaAs quantum wires defined by selective barrier removal
C. Gréus, A. Forchel, G. Mauckner, M. Emmerling, J. Straka, and K. Pieger
Surf. Sci. 267, 263 (1992), DOI: 10.1016/0039-6028(92)91133-V

InGaAs/GaAs quantum wires defined by lateral top barrier modulation
C. Gréus, A. Forchel, J. Straka, K. Pieger, and M. Emmerling
Appl. Phys. Lett. 61, 1199 (1992), DOI: 10.1063/1.107593

Optical Properties of Barrier-Modulated InGaAs/GaAs Quantum Wires
C. Gréus, A. Orth, F. Daiminger, L. V. Butov, T. L. Reinecke, and A. Forchel
Phys. Status Solidi B 173, 323 (1992), DOI: 10.1002/pssb.2221730131

Selective order–disorder transition in GaInP/AlGaInP: A new approach for the definition of buried quantum wires
Y. Hämisch, R. Steffen, J. Oshinowo, and A. Forchel
J. Vac. Sci. Technol. B 10, 2864 (1992), DOI: 10.1116/1.585975

Enhancement of electron-hole pair mobilities in thin GaAs/AlxGa1-xAs quantum wells
H. Hillmer, A. Forchel, and C. W. Tu
Phys. Rev. B 45, 1240 (1992), DOI: 10.1103/PhysRevB.45.1240

Optical analysis of wet chemically etched InGaAs/InP wires
B. Jacobs, M. Emmerling, A. Forchel, I. Gyuro, P. Speier, E. Zielinski, and P. Röntgen
Microelectron. Eng. 17, 501 (1992), DOI: 10.1016/0167-9317(92)90102-W

Investigation of Random and Channeling Ar + Implantation-Induced Damage in Al(In)GaAs/GaAs Quantum Wells
A. Kieslich, J. Straka, and A. Forchel
Jpn. J. Appl. Phys. 31, 4428 (1992), DOI: 10.1143/JJAP.31.4428

Optical study of Ar + implantation‐induced damage in GaAs/GaAlAs heterostructures
A. Kieslich, J. Straka, and A. Forchel
J. Appl. Phys. 72, 6014 (1992), DOI: 10.1063/1.351911

Lateral thermal stability modulation for the definition of InGaAs/InP quantum wires
J. Oshinowo, A. Forchel, J. Dreybrodt, M. Emmerling, I. Gyuro, P. Speier, E. Zielinski, D. Grützmacher, and M. Stollenwerk
Microelectron. Eng. 17, 505 (1992), DOI: 10.1016/0167-9317(92)90103-X

Photoluminescence study of interdiffusion in In 0.53 Ga 0.47 As/InP surface quantum wells
J. Oshinowo, A. Forchel, D. Grützmacher, M. Stollenwerk, M. Heuken, and K. Heime
Appl. Phys. Lett. 60, 2660 (1992), DOI: 10.1063/1.106887

Polarization effects and carrier capture in quantum wires
F. E. Prins, G. Lehr, E. M. Fröhlich, H. Schweizer, A. Forchel, and J. Straka
Superlattices Microstruct. 11, 321 (1992), DOI: 10.1016/0749-6036(92)90390-Q

Investigation of high-quantum efficiency InGaAs/InP and InGaAs/GaAs quantum dots
A. Schmidt, A. Forchel, J. Straka, I. Gyuro, P. Speier, and E. Zielinski
J. Vac. Sci. Technol. B 10, 2896 (1992), DOI: 10.1116/1.585983

Size-Dependent Thermodynamic Properties of Quasi-One-Dimensional Electron-Hole Plasmas
H. Schweizer, G. Lehr, F. E. Prins, E. Lach, E. M. Fröhlich, M. H. Pilkuhn, J. Straka, and A. Forchel
Phys. Status Solidi B 173, 331 (1992), DOI: 10.1002/pssb.2221730132

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Excitonic effects in low density electron-hole plasma in InGaAs/InP quantum wells under magnetic field
L. V. Butov, V. D. Kulakovskii, A. Forchel, and D. Grützmacher
Superlattices Microstruct. 10, 489 (1991), DOI: 10.1016/0749-6036(91)90315-I

High quantum efficiency InGaAs/GaAs quantum wires defined by selective wet etching
C. Gréus, A. Forchel, J. Straka, K. Pieger, and M. Emmerling
J. Vac. Sci. Technol. B 9, 2882 (1991), DOI: 10.1116/1.585618

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First order distributed feedback gratings (92.5–105 nm period) for GaInP/AlGaInP lasers emitting in the visible range
M. Korn, T. Körfer, A. Forchel, and P. Röntgen
J. Vac. Sci. Technol. B 8, 1404 (1990), DOI: 10.1116/1.585086

Magnetotransport in narrow In 0.53 Ga 0.47 As/InP wires
A. Menschig, A. Forchel, B. Roos, R. Germann, K. Pressel, W. Heuring, and D. Grützmacher
Appl. Phys. Lett. 57, 1757 (1990), DOI: 10.1063/1.104058

In0.53Ga0.47As/InP quantum wires: Fabrication and magnetotransport studies
A. Menschig, B. Roos, R. Germann, A. Forchel, K. Pressel, W. Heuring, and D. Grützmacher
J. Vac. Sci. Technol. B 8, 1353 (1990), DOI: 10.1116/1.585076

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