The development of a solid-state system for quantum information technologies and sensing applications is a very vibrant research area. An essential part of it, the spin degree of freedom, is an invaluable source of information as it provides an interface to the environment it is surrounded by. Our group is interested in 2D and 3D wide bandgap semiconductors, such as hexagonal boron nitride (hBN) and silicon carbide (SiC), which have recently attracted much interest as technologically perspective quantum platforms.
