Dr. Leonid Bovkun

• [1]

  W. Beugeling et al., “kdotpy: \($\mathbf{k}\cdot\mathbf{p}$\) theory on a lattice for simulating semiconductor band structures”, 2024. [Online]. Available: https://arxiv.org/abs/2407.12651
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  @preprint{beugeling2024kdotpymathbfkcdotmathbfptheorylattice, author = {Beugeling, Wouter and Bayer, Florian and Berger, Christian and Böttcher, Jan and Bovkun, Leonid and Fuchs, Christopher and Hofer, Maximilian and Shamim, Saquib and Siebert, Moritz and Wang, Li-Xian and Hankiewicz, Ewelina M. and Kießling, Tobias and Buhmann, Hartmut and Molenkamp, Laurens W.}, keywords = {calculation}, title = {kdotpy: $\mathbf{k}\cdot\mathbf{p}$ theory on a lattice for simulating semiconductor band structures}, year = 2024 }

  %0 Generic %1 beugeling2024kdotpymathbfkcdotmathbfptheorylattice %A Beugeling, Wouter %A Bayer, Florian %A Berger, Christian %A Böttcher, Jan %A Bovkun, Leonid %A Fuchs, Christopher %A Hofer, Maximilian %A Shamim, Saquib %A Siebert, Moritz %A Wang, Li-Xian %A Hankiewicz, Ewelina M. %A Kießling, Tobias %A Buhmann, Hartmut %A Molenkamp, Laurens W. %D 2024 %T kdotpy: \($\mathbf{k}\cdot\mathbf{p}$\) theory on a lattice for simulating semiconductor band structures %U https://arxiv.org/abs/2407.12651

• [1]

  L. S. Bovkun et al., “Simultaneous Observation of the Cyclotron Resonances of Electrons and Holes in a HgTe/CdHgTe Double Quantum Well under ``Optical Gate’’ Effect”, JETP Letters, vol. 118, no. 11, Art. no. 11, Dec. 2023, doi: 10.1134/S0021364023603536.
  • [ BibTeX ]
  • [ EndNote ]
  • [ DOI ]
  @article{Bovkun2023, abstract = {Spectral studies of the photoconductivity in the temperature range of T = 5–70 K, as well as studies of the magneto-absorption and magnetotransport at T = 4.2 K, have been performed in a HgTe/CdHgTe heterostructure with a double quantum well under an ``optical gate'' effect. Studies of magneto-absorption spectra under the controlled optical exposure have made it possible to observe absorption lines caused by both the cyclotron resonances of electrons and holes simultaneously. The coexistence of electrons and holes in the HgTe/CdHgTe double quantum well with a relatively large bandgap ({\textasciitilde}80 meV) indicates the appearance of a strongly inhomogeneous light-induced distribution of charge carriers in the plane of the structure. Experimental results obtained clearly demonstrate disadvantages of the control of the Fermi level positions in heterostructures with HgTe/CdHgTe quantum wells by means of the optical gate.}, author = {Bovkun, L. S. and Krishtopenko, S. S. and Aleshkin, V. Ya. and Mikhailov, N. N. and Dvoretsky, S. A. and Teppe, F. and Orlita, M. and Gavrilenko, V. I. and Ikonnikov, A. V.}, journal = {JETP Letters}, keywords = {myown}, month = 12, number = 11, pages = {867–874}, title = {Simultaneous Observation of the Cyclotron Resonances of Electrons and Holes in a HgTe/CdHgTe Double Quantum Well under ``Optical Gate'' Effect}, volume = 118, year = 2023 }

  %0 Journal Article %1 Bovkun2023 %A Bovkun, L. S. %A Krishtopenko, S. S. %A Aleshkin, V. Ya. %A Mikhailov, N. N. %A Dvoretsky, S. A. %A Teppe, F. %A Orlita, M. %A Gavrilenko, V. I. %A Ikonnikov, A. V. %D 2023 %J JETP Letters %N 11 %P 867--874 %R 10.1134/S0021364023603536 %T Simultaneous Observation of the Cyclotron Resonances of Electrons and Holes in a HgTe/CdHgTe Double Quantum Well under ``Optical Gate'' Effect %U https://doi.org/10.1134/S0021364023603536 %V 118 %X Spectral studies of the photoconductivity in the temperature range of T = 5--70 K, as well as studies of the magneto-absorption and magnetotransport at T = 4.2 K, have been performed in a HgTe/CdHgTe heterostructure with a double quantum well under an ``optical gate'' effect. Studies of magneto-absorption spectra under the controlled optical exposure have made it possible to observe absorption lines caused by both the cyclotron resonances of electrons and holes simultaneously. The coexistence of electrons and holes in the HgTe/CdHgTe double quantum well with a relatively large bandgap (\textasciitilde80 meV) indicates the appearance of a strongly inhomogeneous light-induced distribution of charge carriers in the plane of the structure. Experimental results obtained clearly demonstrate disadvantages of the control of the Fermi level positions in heterostructures with HgTe/CdHgTe quantum wells by means of the optical gate.

• [1]

  A. V. Ikonnikov et al., “Origin of Structure Inversion Asymmetry in Double HgTe Quantum Wells”, JETP Letters, vol. 116, no. 8, Art. no. 8, 2022, doi: 10.1134/S0021364022601889.
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  • [ DOI ]
  @article{RN1057, author = {Ikonnikov, A. V. and Krishtopenko, S. S. and Bovkun, L. S. and Mikhailov, N. N. and Dvoretskii, S. A. and Piot, B. A. and Potemski, M. and Orlita, M. and Teppe, F. and Gavrilenko, V. I.}, journal = {JETP Letters}, keywords = {imported}, number = 8, pages = {547-555}, title = {Origin of Structure Inversion Asymmetry in Double HgTe Quantum Wells}, type = {Journal Article}, volume = 116, year = 2022 }

  %0 Journal Article %1 RN1057 %A Ikonnikov, A. V. %A Krishtopenko, S. S. %A Bovkun, L. S. %A Mikhailov, N. N. %A Dvoretskii, S. A. %A Piot, B. A. %A Potemski, M. %A Orlita, M. %A Teppe, F. %A Gavrilenko, V. I. %D 2022 %J JETP Letters %N 8 %P 547-555 %R 10.1134/S0021364022601889 %T Origin of Structure Inversion Asymmetry in Double HgTe Quantum Wells %U https://doi.org/10.1134/S0021364022601889 %V 116

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  V. V. Rumyantsev et al., “Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers”, Nanomaterials, vol. 11, no. 7, Art. no. 7, 2021, [Online]. Available: https://www.mdpi.com/2079-4991/11/7/1855
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  @article{RN1058, author = {Rumyantsev, Vladimir V. and Razova, Anna A. and Bovkun, Leonid S. and Tatarskiy, Dmitriy A. and Mikhailovskii, Vladimir Y. and Zholudev, Maksim S. and Ikonnikov, Anton V. and Uaman Svetikova, Tatyana A. and Maremyanin, Kirill V. and Utochkin, Vladimir V. and Fadeev, Mikhail A. and Remesnik, Vladimir G. and Aleshkin, Vladimir Y. and Mikhailov, Nikolay N. and Dvoretsky, Sergey A. and Potemski, Marek and Orlita, Milan and Gavrilenko, Vladimir I. and Morozov, Sergey V.}, journal = {Nanomaterials}, keywords = {imported}, number = 7, pages = 1855, title = {Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers}, type = {Journal Article}, volume = 11, year = 2021 }

  %0 Journal Article %1 RN1058 %A Rumyantsev, Vladimir V. %A Razova, Anna A. %A Bovkun, Leonid S. %A Tatarskiy, Dmitriy A. %A Mikhailovskii, Vladimir Y. %A Zholudev, Maksim S. %A Ikonnikov, Anton V. %A Uaman Svetikova, Tatyana A. %A Maremyanin, Kirill V. %A Utochkin, Vladimir V. %A Fadeev, Mikhail A. %A Remesnik, Vladimir G. %A Aleshkin, Vladimir Y. %A Mikhailov, Nikolay N. %A Dvoretsky, Sergey A. %A Potemski, Marek %A Orlita, Milan %A Gavrilenko, Vladimir I. %A Morozov, Sergey V. %D 2021 %J Nanomaterials %N 7 %P 1855 %T Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers %U https://www.mdpi.com/2079-4991/11/7/1855 %V 11

• [1]

  L. S. Bovkun et al., “Effects of the Electron—Electron Interaction in the Magneto-Absorption Spectra of HgTe/CdHgTe Quantum Wells with an Inverted Band Structure”, JETP Letters, vol. 112, no. 8, Art. no. 8, 2020, doi: 10.1134/S0021364020200059.
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  @article{RN1056, author = {Bovkun, L. S. and Ikonnikov, A. V. and Krishtopenko, S. S. and Aleshkin, V. Ya and Zholudev, M. S. and Ruffenach, S. and Consejo, C. and Teppe, F. and Dvoretskii, S. A. and Mikhailov, N. N. and Potemski, M. and Orlita, M. and Gavrilenko, V. I.}, journal = {JETP Letters}, keywords = {imported}, number = 8, pages = {508-512}, title = {Effects of the Electron—Electron Interaction in the Magneto-Absorption Spectra of HgTe/CdHgTe Quantum Wells with an Inverted Band Structure}, type = {Journal Article}, volume = 112, year = 2020 }

  %0 Journal Article %1 RN1056 %A Bovkun, L. S. %A Ikonnikov, A. V. %A Krishtopenko, S. S. %A Aleshkin, V. Ya %A Zholudev, M. S. %A Ruffenach, S. %A Consejo, C. %A Teppe, F. %A Dvoretskii, S. A. %A Mikhailov, N. N. %A Potemski, M. %A Orlita, M. %A Gavrilenko, V. I. %D 2020 %J JETP Letters %N 8 %P 508-512 %R 10.1134/S0021364020200059 %T Effects of the Electron—Electron Interaction in the Magneto-Absorption Spectra of HgTe/CdHgTe Quantum Wells with an Inverted Band Structure %U https://doi.org/10.1134/S0021364020200059 %V 112

• [1]

  L. S. Bovkun et al., “Landau level spectroscopy of valence bands in HgTe quantum wells: effects of symmetry lowering”, Journal of Physics: Condensed Matter, vol. 31, no. 14, Art. no. 14, 2019, doi: 10.1088/1361-648x/aafdf0.
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  @article{RN854, author = {Bovkun, L. S. and Ikonnikov, A. V. and Aleshkin, V. Ya and Spirin, K. E. and Gavrilenko, V. I. and Mikhailov, N. N. and Dvoretskii, S. A. and Teppe, F. and Piot, B. A. and Potemski, M. and Orlita, M.}, journal = {Journal of Physics: Condensed Matter}, keywords = {imported}, number = 14, pages = 145501, title = {Landau level spectroscopy of valence bands in HgTe quantum wells: effects of symmetry lowering}, type = {Journal Article}, volume = 31, year = 2019 }

  %0 Journal Article %1 RN854 %A Bovkun, L. S. %A Ikonnikov, A. V. %A Aleshkin, V. Ya %A Spirin, K. E. %A Gavrilenko, V. I. %A Mikhailov, N. N. %A Dvoretskii, S. A. %A Teppe, F. %A Piot, B. A. %A Potemski, M. %A Orlita, M. %D 2019 %J Journal of Physics: Condensed Matter %N 14 %P 145501 %R 10.1088/1361-648x/aafdf0 %T Landau level spectroscopy of valence bands in HgTe quantum wells: effects of symmetry lowering %U http://dx.doi.org/10.1088/1361-648X/aafdf0 %V 31
• [1]

  L. S. Bovkun et al., “Magnetospectroscopy of double HgTe/CdHgTe QWs with inverted band structure in high magnetic fields up to 30 T”, Opto-Electronics Review, vol. 27, no. 2, Art. no. 2, 2019, doi: https://doi.org/10.1016/j.opelre.2019.06.001.
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  @article{RN849, author = {Bovkun, L. S. and Ikonnikov, A. V. and Aleshkin, V. Ya and Maremyanin, K. V. and Mikhailov, N. N. and Dvoretskii, S. A. and Krishtopenko, S. S. and Teppe, F. and Piot, B. A. and Potemski, M. and Orlita, M. and Gavrilenko, V. I.}, journal = {Opto-Electronics Review}, keywords = {imported}, number = 2, pages = {213-218}, title = {Magnetospectroscopy of double HgTe/CdHgTe QWs with inverted band structure in high magnetic fields up to 30 T}, type = {Journal Article}, volume = 27, year = 2019 }

  %0 Journal Article %1 RN849 %A Bovkun, L. S. %A Ikonnikov, A. V. %A Aleshkin, V. Ya %A Maremyanin, K. V. %A Mikhailov, N. N. %A Dvoretskii, S. A. %A Krishtopenko, S. S. %A Teppe, F. %A Piot, B. A. %A Potemski, M. %A Orlita, M. %A Gavrilenko, V. I. %D 2019 %J Opto-Electronics Review %N 2 %P 213-218 %R https://doi.org/10.1016/j.opelre.2019.06.001 %T Magnetospectroscopy of double HgTe/CdHgTe QWs with inverted band structure in high magnetic fields up to 30 T %U http://www.sciencedirect.com/science/article/pii/S1230340218301483 %V 27
• [1]

  L. S. Bovkun et al., “Magnetoabsorption in HgCdTe/CdHgTe Quantum Wells in Tilted Magnetic Fields”, JETP Letters, vol. 109, no. 3, Art. no. 3, 2019, doi: 10.1134/S002136401903007X.
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  @article{RN1065, author = {Bovkun, L. S. and Ikonnikov, A. V. and Aleshkin, V. Ya and Orlita, M. and Potemski, M. and Piot, B. A. and Dvoretskii, S. A. and Mikhailov, N. N. and Gavrilenko, V. I.}, journal = {JETP Letters}, keywords = {imported}, number = 3, pages = {191-197}, title = {Magnetoabsorption in HgCdTe/CdHgTe Quantum Wells in Tilted Magnetic Fields}, type = {Journal Article}, volume = 109, year = 2019 }

  %0 Journal Article %1 RN1065 %A Bovkun, L. S. %A Ikonnikov, A. V. %A Aleshkin, V. Ya %A Orlita, M. %A Potemski, M. %A Piot, B. A. %A Dvoretskii, S. A. %A Mikhailov, N. N. %A Gavrilenko, V. I. %D 2019 %J JETP Letters %N 3 %P 191-197 %R 10.1134/S002136401903007X %T Magnetoabsorption in HgCdTe/CdHgTe Quantum Wells in Tilted Magnetic Fields %U https://doi.org/10.1134/S002136401903007X %V 109

• [1]

  V. V. Rumyantsev et al., “Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range”, Semiconductors, vol. 52, no. 4, Art. no. 4, 2018, doi: 10.1134/S1063782618040255.
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  @article{RN534, author = {Rumyantsev, V. V. and Bovkun, L. S. and Kadykov, A. M. and Fadeev, A. M. and Dubinov, A. A. and Aleshkin, V. Ya. and Mikhailov, N. N. and Dvoretski, S. A. and Piot, B. A. and Orlita, M. and Potemski, M. and Teppe, F. and Morozov, S. and Gavrilenko, V.}, journal = {Semiconductors}, keywords = {imported}, number = 4, pages = {436-441}, title = {Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range}, type = {Journal Article}, volume = 52, year = 2018 }

  %0 Journal Article %1 RN534 %A Rumyantsev, V. V. %A Bovkun, L. S. %A Kadykov, A. M. %A Fadeev, A. M. %A Dubinov, A. A. %A Aleshkin, V. Ya. %A Mikhailov, N. N. %A Dvoretski, S. A. %A Piot, B. A. %A Orlita, M. %A Potemski, M. %A Teppe, F. %A Morozov, S. %A Gavrilenko, V. %D 2018 %J Semiconductors %N 4 %P 436-441 %R 10.1134/S1063782618040255 %T Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range %U https://link.springer.com/article/10.1134/S1063782618040255 %V 52
• [1]

  L. Bovkun, “Investigation of the band structure of quantum wells based on gapless and narrow-band semiconductors HgTe and InAs”, PhD Thesis, no. 2018GREAY060, Art. no. 2018GREAY060, 2018, [Online]. Available: https://tel.archives-ouvertes.fr/tel-02057445
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  @article{RN833, author = {Bovkun, Leonid}, journal = {PhD Thesis}, keywords = {imported}, number = {2018GREAY060}, title = {Investigation of the band structure of quantum wells based on gapless and narrow-band semiconductors HgTe and InAs}, type = {Journal Article}, year = 2018 }

  %0 Journal Article %1 RN833 %A Bovkun, Leonid %D 2018 %J PhD Thesis %N 2018GREAY060 %T Investigation of the band structure of quantum wells based on gapless and narrow-band semiconductors HgTe and InAs %U https://tel.archives-ouvertes.fr/tel-02057445
• [1]

  K. V. Maremyanin et al., “Terahertz injection lasers based on solid solution PbSnSe with emission wavelength up to 50 microns and their use for magnetospectroscopy of semiconductors”, Semiconductors, vol. 52, no. 12, Art. no. 12, 2018, doi: 10.1134/S1063782618120163.
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  @article{RN645, author = {Maremyanin, K. V. and Ikonnikov, A. V. and Bovkun, L. S. and Rumyantsev, V. V. and Chizhevskii, E. G. and Zasavitski, I. I. and Gavrilenko, V. I.}, journal = {Semiconductors}, keywords = {imported}, number = 12, pages = {1590–1594}, title = {Terahertz injection lasers based on solid solution PbSnSe with emission wavelength up to 50 microns and their use for magnetospectroscopy of semiconductors}, type = {Journal Article}, volume = 52, year = 2018 }

  %0 Journal Article %1 RN645 %A Maremyanin, K. V. %A Ikonnikov, A. V. %A Bovkun, L. S. %A Rumyantsev, V. V. %A Chizhevskii, E. G. %A Zasavitski, I. I. %A Gavrilenko, V. I. %D 2018 %J Semiconductors %N 12 %P 1590–1594 %R 10.1134/S1063782618120163 %T Terahertz injection lasers based on solid solution PbSnSe with emission wavelength up to 50 microns and their use for magnetospectroscopy of semiconductors %V 52
• [1]

  L. S. Bovkun et al., “Polarization-Sensitive Fourier-Transform Spectroscopy of HgTe/CdHgTe Quantum Wells in the Far Infrared Range in a Magnetic Field”, JETP Letters, vol. 108, no. 5, Art. no. 5, 2018, doi: 10.1134/s0021364018170058.
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  @article{RN810, author = {Bovkun, L. S. and Ikonnikov, A. V. and Aleshkin, V. Ya. and Krishtopenko, S. S. and Mikhailov, N. N. and Dvoretskii, S. A. and Potemski, M. and Piot, B. and Orlita, M. and Gavrilenko, V. I.}, journal = {JETP Letters}, keywords = {imported}, number = 5, pages = {329-334}, title = {Polarization-Sensitive Fourier-Transform Spectroscopy of HgTe/CdHgTe Quantum Wells in the Far Infrared Range in a Magnetic Field}, type = {Journal Article}, volume = 108, year = 2018 }

  %0 Journal Article %1 RN810 %A Bovkun, L. S. %A Ikonnikov, A. V. %A Aleshkin, V. Ya. %A Krishtopenko, S. S. %A Mikhailov, N. N. %A Dvoretskii, S. A. %A Potemski, M. %A Piot, B. %A Orlita, M. %A Gavrilenko, V. I. %D 2018 %J JETP Letters %N 5 %P 329-334 %R 10.1134/s0021364018170058 %T Polarization-Sensitive Fourier-Transform Spectroscopy of HgTe/CdHgTe Quantum Wells in the Far Infrared Range in a Magnetic Field %U https://doi.org/10.1134/S0021364018170058 %V 108
• [1]

  L. S. Bovkun et al., “Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T”, Semiconductors, vol. 52, no. 11, Art. no. 11, 2018, doi: 10.1134/s1063782618110052.
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  @article{RN811, author = {Bovkun, L. S. and Maremyanin, K. V. and Ikonnikov, A. V. and Spirin, K. E. and Aleshkin, V. Ya. and Potemski, M. and Piot, B. A. and Orlita, M. and Mikhailov, N. N. and Dvoretskii, S. A. and Gavrilenko, V. I.}, journal = {Semiconductors}, keywords = {imported}, number = 11, pages = {1386-1391}, title = {Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T}, type = {Journal Article}, volume = 52, year = 2018 }

  %0 Journal Article %1 RN811 %A Bovkun, L. S. %A Maremyanin, K. V. %A Ikonnikov, A. V. %A Spirin, K. E. %A Aleshkin, V. Ya. %A Potemski, M. %A Piot, B. A. %A Orlita, M. %A Mikhailov, N. N. %A Dvoretskii, S. A. %A Gavrilenko, V. I. %D 2018 %J Semiconductors %N 11 %P 1386-1391 %R 10.1134/s1063782618110052 %T Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T %U https://doi.org/10.1134/S1063782618110052 %V 52

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  L. S. Bovkun et al., “Activation conductivity in HgTe/CdHgTe quantum wells at integer landau level filling factors: role of the random potential”, Semiconductors, vol. 51, no. 12, Art. no. 12, 2017, doi: 10.1134/S106378261712003X.
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  @article{RN521, author = {Bovkun, L. S. and Ikonnikov, A. and Aleshkin, V. Ya. and Krishtopenko, S. S. and Antonov, A. V. and Spirin, K. E. and Mikhailov, N. N. and Dvoretsky, S. A. and Gavrilenko, V. I.}, journal = {Semiconductors}, keywords = {imported}, number = 12, pages = {1562-1570}, title = {Activation conductivity in HgTe/CdHgTe quantum wells at integer landau level filling factors: role of the random potential}, type = {Journal Article}, volume = 51, year = 2017 }

  %0 Journal Article %1 RN521 %A Bovkun, L. S. %A Ikonnikov, A. %A Aleshkin, V. Ya. %A Krishtopenko, S. S. %A Antonov, A. V. %A Spirin, K. E. %A Mikhailov, N. N. %A Dvoretsky, S. A. %A Gavrilenko, V. I. %D 2017 %J Semiconductors %N 12 %P 1562-1570 %R 10.1134/S106378261712003X %T Activation conductivity in HgTe/CdHgTe quantum wells at integer landau level filling factors: role of the random potential %V 51
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  S. S. Krishtopenko et al., “Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells”, Semiconductors, vol. 51, no. 1, Art. no. 1, 2017, doi: 10.1134/S1063782617010109.
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  @article{RN436, author = {Krishtopenko, S. S. and Ikonnikov, A. V. and Maremyanin, K. V. and Bovkun, L. S. and Spirin, K. E. and Kadykov, A. M. and Marcinkiewicz, M. and Ruffenach, S. and Consejo, C. and Teppe, F. and Knap, W. and Semyagin, B. R. and Putyato, M. A. and Emelyanov, E. A. and Preobrazhenskii, V. V. and Gavrilenko, V. I.}, journal = {Semiconductors}, keywords = {imported}, number = 1, pages = {38-42}, title = {Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells}, type = {Journal Article}, volume = 51, year = 2017 }

  %0 Journal Article %1 RN436 %A Krishtopenko, S. S. %A Ikonnikov, A. V. %A Maremyanin, K. V. %A Bovkun, L. S. %A Spirin, K. E. %A Kadykov, A. M. %A Marcinkiewicz, M. %A Ruffenach, S. %A Consejo, C. %A Teppe, F. %A Knap, W. %A Semyagin, B. R. %A Putyato, M. A. %A Emelyanov, E. A. %A Preobrazhenskii, V. V. %A Gavrilenko, V. I. %D 2017 %J Semiconductors %N 1 %P 38-42 %R 10.1134/S1063782617010109 %T Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells %U http://dx.doi.org/10.1134/S1063782617010109 %V 51
• [1]

  S. Ruffenach et al., “Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs ‘Three-Layer’ Gapless Quantum Wells”, JETP Letters, vol. 106, no. 11, Art. no. 11, 2017, doi: 10.1134/s0021364017230102.
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  • [ DOI ]
  @article{RN564, author = {Ruffenach, S. and Krishtopenko, S. S. and Bovkun, L. S. and Ikonnikov, A. V. and Marcinkiewicz, M. and Consejo, C. and Potemski, M. and Piot, B. and Orlita, M. and Semyagin, B. R. and Putyato, M. A. and Emel’yanov, E. A. and Preobrazhenskii, V. V. and Knap, W. and Gonzalez-Posada, F. and Boissier, G. and Tournié, E. and Teppe, F. and Gavrilenko, V. I.}, journal = {JETP Letters}, keywords = {imported}, number = 11, pages = {727-732}, title = {Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells}, type = {Journal Article}, volume = 106, year = 2017 }

  %0 Journal Article %1 RN564 %A Ruffenach, S. %A Krishtopenko, S. S. %A Bovkun, L. S. %A Ikonnikov, A. V. %A Marcinkiewicz, M. %A Consejo, C. %A Potemski, M. %A Piot, B. %A Orlita, M. %A Semyagin, B. R. %A Putyato, M. A. %A Emel’yanov, E. A. %A Preobrazhenskii, V. V. %A Knap, W. %A Gonzalez-Posada, F. %A Boissier, G. %A Tournié, E. %A Teppe, F. %A Gavrilenko, V. I. %D 2017 %J JETP Letters %N 11 %P 727-732 %R 10.1134/s0021364017230102 %T Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells %U https://doi.org/10.1134/S0021364017230102 %V 106
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  A. V. Ikonnikov et al., “On the Band Spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation”, Semiconductors, vol. 51, no. 12, Art. no. 12, 2017, doi: 10.1134/S1063782617120090.
  • [ BibTeX ]
  • [ EndNote ]
  • [ DOI ]
  @article{RN522, author = {Ikonnikov, A. V. and Bovkun, L. S. and Rumyantsev, V. V. and Krishtopenko, S. S. and Aleshkin, V. Ya. and Kadykov, A. M. and Orlita, M. and Potemski, M. and Gavrilenko, V. I. and Morozov, S. V. and Dvoretsky, S. A. and Mikhailov, N. N.}, journal = {Semiconductors}, keywords = {imported}, number = 12, pages = {1531-1536}, title = {On the Band Spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation}, type = {Journal Article}, volume = 51, year = 2017 }

  %0 Journal Article %1 RN522 %A Ikonnikov, A. V. %A Bovkun, L. S. %A Rumyantsev, V. V. %A Krishtopenko, S. S. %A Aleshkin, V. Ya. %A Kadykov, A. M. %A Orlita, M. %A Potemski, M. %A Gavrilenko, V. I. %A Morozov, S. V. %A Dvoretsky, S. A. %A Mikhailov, N. N. %D 2017 %J Semiconductors %N 12 %P 1531-1536 %R 10.1134/S1063782617120090 %T On the Band Spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation %U https://link.springer.com/article/10.1134/S1063782617120090 %V 51

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  L. S. Bovkun et al., “Magnetospectroscopy of double HgTe/CdHgTe quantum wells”, Semiconductors, vol. 50, no. 11, Art. no. 11, 2016, doi: 10.1134/S1063782616110063.
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  • [ EndNote ]
  • [ DOI ]
  @article{RN327, author = {Bovkun, L. S. and Krishtopenko, S. S. and Ikonnikov, A. V. and Aleshkin, V. Ya. and Kadykov, A. M. and Ruffenach, S. and Consejo, C. and Teppe, F. and Knap, W. and Orlita, M. and Piot, B. and Potemski, M. and Mikhailov, N. N. and Dvoretskii, S. A. and Gavrilenko, V. I.}, journal = {Semiconductors}, keywords = {imported}, number = 11, pages = {1532-1538}, title = {Magnetospectroscopy of double HgTe/CdHgTe quantum wells}, type = {Journal Article}, volume = 50, year = 2016 }

  %0 Journal Article %1 RN327 %A Bovkun, L. S. %A Krishtopenko, S. S. %A Ikonnikov, A. V. %A Aleshkin, V. Ya. %A Kadykov, A. M. %A Ruffenach, S. %A Consejo, C. %A Teppe, F. %A Knap, W. %A Orlita, M. %A Piot, B. %A Potemski, M. %A Mikhailov, N. N. %A Dvoretskii, S. A. %A Gavrilenko, V. I. %D 2016 %J Semiconductors %N 11 %P 1532-1538 %R 10.1134/S1063782616110063 %T Magnetospectroscopy of double HgTe/CdHgTe quantum wells %U http://dx.doi.org/10.1134/S1063782616110063 %V 50
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  K. V. Maremyanin et al., “Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm”, Semiconductors, vol. 50, no. 12, Art. no. 12, 2016, doi: 10.1134/S1063782616120125.
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  • [ DOI ]
  @article{RN435, author = {Maremyanin, K. V. and Rumyantsev, V. V. and Ikonnikov, A. V. and Bovkun, L. S. and Chizhevskii, E. G. and Zasavitskii, I. I. and Gavrilenko, V. I.}, journal = {Semiconductors}, keywords = {imported}, number = 12, pages = {1669-1672}, title = {Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm}, type = {Journal Article}, volume = 50, year = 2016 }

  %0 Journal Article %1 RN435 %A Maremyanin, K. V. %A Rumyantsev, V. V. %A Ikonnikov, A. V. %A Bovkun, L. S. %A Chizhevskii, E. G. %A Zasavitskii, I. I. %A Gavrilenko, V. I. %D 2016 %J Semiconductors %N 12 %P 1669-1672 %R 10.1134/S1063782616120125 %T Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm %U http://dx.doi.org/10.1134/S1063782616120125 %V 50

• [1]

  K. V. Maremyanin et al., “Long-wavelength injection lasers based on Pb1–x Sn x Se alloys and their use in solid-state spectroscopy”, Semiconductors, vol. 49, no. 12, Art. no. 12, 2015, doi: 10.1134/s1063782615120118.
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  @article{RN225, author = {Maremyanin, K. V. and Ikonnikov, A. V. and Antonov, A. V. and Rumyantsev, V. V. and Morozov, S. V. and Bovkun, L. S. and Umbetalieva, K. R. and Chizhevskiy, E. G. and Zasavitskiy, I. I. and Gavrilenko, V. I.}, journal = {Semiconductors}, keywords = {imported}, number = 12, pages = {1623-1626}, title = {Long-wavelength injection lasers based on Pb1–x Sn x Se alloys and their use in solid-state spectroscopy}, type = {Journal Article}, volume = 49, year = 2015 }

  %0 Journal Article %1 RN225 %A Maremyanin, K. V. %A Ikonnikov, A. V. %A Antonov, A. V. %A Rumyantsev, V. V. %A Morozov, S. V. %A Bovkun, L. S. %A Umbetalieva, K. R. %A Chizhevskiy, E. G. %A Zasavitskiy, I. I. %A Gavrilenko, V. I. %D 2015 %J Semiconductors %N 12 %P 1623-1626 %R 10.1134/s1063782615120118 %T Long-wavelength injection lasers based on Pb1–x Sn x Se alloys and their use in solid-state spectroscopy %V 49
• [1]

  L. S. Bovkun et al., “Exchange enhancement of the electron g-factor in a two-dimensional semimetal in HgTe quantum wells”, Semiconductors, vol. 49, no. 12, Art. no. 12, 2015, doi: 10.1134/s1063782615120052.
  • [ BibTeX ]
  • [ EndNote ]
  • [ DOI ]
  @article{RN248, author = {Bovkun, L. S. and Krishtopenko, S. S. and Zholudev, M. S. and Ikonnikov, A. V. and Spirin, K. E. and Dvoretsky, S. A. and Mikhailov, N. N. and Teppe, F. and Knap, W. and Gavrilenko, V. I.}, journal = {Semiconductors}, keywords = {imported}, number = 12, pages = {1627-1633}, title = {Exchange enhancement of the electron g-factor in a two-dimensional semimetal in HgTe quantum wells}, type = {Journal Article}, volume = 49, year = 2015 }

  %0 Journal Article %1 RN248 %A Bovkun, L. S. %A Krishtopenko, S. S. %A Zholudev, M. S. %A Ikonnikov, A. V. %A Spirin, K. E. %A Dvoretsky, S. A. %A Mikhailov, N. N. %A Teppe, F. %A Knap, W. %A Gavrilenko, V. I. %D 2015 %J Semiconductors %N 12 %P 1627-1633 %R 10.1134/s1063782615120052 %T Exchange enhancement of the electron g-factor in a two-dimensional semimetal in HgTe quantum wells %V 49