Development of site-controlled quantum dots on III-V semiconductor.
Nanophotonic and electronic bandgap engineering of broadband optical III-V quantum (QD).
MBE growth process development and optoelectronic material characterization thereof in our cleanroom facilities at the Gottfried Landwehr Laboratory for Nanotechnologies.
Even if not advertised, we highly appreciate applications by qualified scientists (PhD and PostDoc) from all over the world. Feel free to contact our professors or group leaders.
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